GN4L3M
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR GN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES 0.3 +0.1 −0 • Compact package 0.15 +0.1 −0.05 Marking • Resistors built-in type • Complementary to GN4xxx ORDERING INFORMATION PART NUMBER
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SC-70
GN4L3M
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D1649
Abstract: r2kv GN4L3M
Text: DATA SHEET SILICON TRANSISTOR GN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES • Compact package 0.3 +0.1 −0 0.15 +0.1 −0.05 • Resistors built-in type Marking • Complementary to GA4xxx PART NUMBER PACKAGE GN4xxx SC-70
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SC-70
D1649
r2kv
GN4L3M
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D1649
Abstract: fn4l3n FN4F4M
Text: DATA SHEET SILICON TRANSISTOR FN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package +0.1 0.65 –0.15 • Resistors built-in type • Complementary to FA4xxx 0.4 +0.1 –0.05 +0.1 0.16 –0.06 Marking PACKAGE
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SC-59
D1649
fn4l3n
FN4F4M
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R24020
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR FN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR ★ PACKAGE DRAWING Unit: mm FEATURES 0.65 –0.15 • Compact package +0.1 • Resistors built-in type • Complementary to FA4xxx 0.4 +0.1 –0.05 +0.1 0.16 –0.06 Marking PACKAGE
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SC-59
R24020
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D1649
Abstract: GN4L3M
Text: DATA SHEET SILICON TRANSISTOR GN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR ★ PACKAGE DRAWING Unit: mm FEATURES • Compact package 0.3 +0.1 −0 • Resistors built-in type 0.15 +0.1 −0.05 Marking • Complementary to GA4xxx ORDERING INFORMATION PART NUMBER
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SC-70
D1649
GN4L3M
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infineon marking W1s SOT23
Abstract: marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23
Text: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 30 mA 2 3 • Complementary type: BFR92P NPN 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFT92 Marking W1s Pin Configuration
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BFT92
BFR92P
infineon marking W1s SOT23
marking W1S sot23
infineon marking W1s
transitor RF 98
BFT92
bft92 datasheet
w1s sot23
30227
BFR92p application note
marking code 10 sot23
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Untitled
Abstract: No abstract text available
Text: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89
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KSD1621
KSB1121
OT-89
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tm 1621
Abstract: qs marking sot-89 QS 100 NPN Transistor KSB1121 KSD1621 KSD1621RTF KSD1621STF KSD1621TTF KSD1621UTF MARKING CODE B3 sot-89
Text: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89
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KSD1621
KSB1121
OT-89
tm 1621
qs marking sot-89
QS 100 NPN Transistor
KSB1121
KSD1621
KSD1621RTF
KSD1621STF
KSD1621TTF
KSD1621UTF
MARKING CODE B3 sot-89
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Untitled
Abstract: No abstract text available
Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking
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BFR949T
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Untitled
Abstract: No abstract text available
Text: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFR949T
VPS05996
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BFR949T
Abstract: MA457 MARKING C6 BFR94
Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking
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BFR949T
BFR949T
MA457
MARKING C6
BFR94
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BFR94
Abstract: No abstract text available
Text: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFR949T
VPS05996
BFR94
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BFR949T
Abstract: SC75 GMA marking
Text: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFR949T
VPS05996
Oct-24-2001
BFR949T
SC75
GMA marking
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marking CODE n3 6PIN
Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
Text: ２０１０年３月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2
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2SA1235
marking CODE n3 6PIN
MOSFET TRANSISTOR SMD MARKING CODE nh
INK0001AC
RT8H
2SA798 equivalent
2SC2259
marking code NJ SMD Transistor
MC931 diode
smd transistor marking A7 p7
transistor smd marking ka p7
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Infineon Technologies transistor 4 ghz
Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BFR340L3
Infineon Technologies transistor 4 ghz
BFR193L3
BFR340L3
BFR34* transistor
marking FA
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C5 MARKING TRANSISTOR
Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)
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BFR380L3
C5 MARKING TRANSISTOR
infineon marking code L1
Infineon Technologies transistor 4 ghz
BFR193L3
BFR380L3
INFINEON transistor marking
MARKING CODE 21E
infineon marking code L2
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BFR360L3
Abstract: BFR193L3
Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BFR360L3
BFR360L3
BFR193L3
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Untitled
Abstract: No abstract text available
Text: BFR193L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz 3 For linear broadband amplifiers fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR193L3
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BFR193L3
Abstract: BFR340L3 marking FA
Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR340L3
BFR193L3
BFR340L3
marking FA
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infineon marking L2
Abstract: BFR193L3
Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR193L3
infineon marking L2
BFR193L3
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BFR193L3
Abstract: BFR380L3 marking FC
Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description
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BFR380L3
BFR193L3
BFR380L3
marking FC
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marking FC
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR380L3
marking FC
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A1807
Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
Text: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for
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2SA1807F5
SC-63)
A1807
nw-60
pnp transistor 600V
2SA1807F5
transistor marking code NW
transistors 2SA
transistor 2SA 6 J
transistor 2SA 600v
PNP -600v
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Sanken STR
Abstract: STR50041 sanken lot number sanken ic regulator str z STR50041A sanken str z sanken ic regulator sanken ic regulator str 7760E SC102
Text: SA NK EN E L E C T R IC COMPANY, LTD. Sanken Switching Regulator Hybrid IC Type: ST R 5 0 0 4 1 A 1. Scope: The present specification shall only apply to Sanken Switching Regulator Hybrid IC, type SIR50041A. 2. Appearance and Configuration 2-1. Appearance.'
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STR50041A
STR50041A.
7760E
Sanken STR
STR50041
sanken lot number
sanken ic regulator str z
STR50041A
sanken str z
sanken ic regulator
sanken ic regulator str
7760E
SC102
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