Untitled
Abstract: No abstract text available
Text: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL
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FJX3904
SC-70
FJX3904TF
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PDF
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TRANSISTOR SMD MARKING CODE 210
Abstract: SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h
Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1 FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking
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Original
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LMSB709LT1
3000/Tape
LMSB709LT1G
OT-23
LMSB709LT1-1/2
LMSB709LT1-2/2
TRANSISTOR SMD MARKING CODE 210
SMD Transistor Y14
TRANSISTOR SMD MARKING CODE 304 a
TRANSISTOR SMD MARKING CODE X D
marking code br SMD
TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE PD
transistor smd code marking 102
transistor smd arx
TRANSISTOR SMD MARKING CODE 304 h
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PDF
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CQ 523
Abstract: MARKING CODE cq sot-89
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KXLT1G FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 TO–236AB Shipping
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Original
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L2SC2411KXLT1G
L2SA1036K
236AB)
L2SC2411KPLT1G
3000/Tape
L2SC2411KPLT3G
10000/Tape
L2SC2411KQLT1G
L2SC2411KQLT3G
CQ 523
MARKING CODE cq sot-89
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SST6839 I PNP General Purpose Transistor SST6839 •Features 1 B V c£c < — 40V lc = — 1mA) 2 ) Com plem ents the SST6838. •External dimensions (Units : mm) •Package, marking« and packaging specifications Type S ST 6S39 Package Marking
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OCR Scan
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SST6839
SST6838.
SPEC-A32)
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PDF
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L2SC2411KRLT1G
Abstract: L2SC2411KPLT1 L2SC2411KPLT1G L2SC2411KQLT1 L2SC2411KQLT1G L2SC2411KRLT1 L2SC2411KLT1
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411K*LT1 FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT– 23 TO–236AB Marking Shipping
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Original
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L2SC2411K
L2SA1036K
236AB)
L2SC2411KPLT1
3000/Tape
L2SC2411KPLT1G
L2SC2411KQLT1
L2SC2411KQLT1G
L2SC2411KRLT1G
L2SC2411KPLT1
L2SC2411KPLT1G
L2SC2411KQLT1
L2SC2411KQLT1G
L2SC2411KRLT1
L2SC2411KLT1
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PDF
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s48b
Abstract: CS-48B C848B transistor marking SA 8
Text: Transistors SST6838 I NPN General Purpose Transistor SST6838 •Features 1 8 V ceo < 4 0 V tc= 1m A) 2 ) Com plem ents the SST8839. •External dimensions (Units ' mm) • Package, marking, and packaging specifications Type Package name Marking SST8838
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OCR Scan
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SST6838
SST8839.
SST8838
100MHz
C848B
SPEC-C22)
s48b
CS-48B
transistor marking SA 8
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PDF
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SO642
Abstract: SO692
Text: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SO 642 N91 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP COMPLEMENT IS SO692 2 3
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SO642
SO692
OT-23
SO642
SO692
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PDF
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transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4
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OCR Scan
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BFS17/BFS17R
BFS17
BFS17R
26-Mar-97
transistor MAR 819
transistor MAR 543
sl2 357
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter
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Original
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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PDF
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M8050
Abstract: No abstract text available
Text: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11
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M8050
200mW
OT-23
M8050-L
800mA,
30MHz
800mA
M8050
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PDF
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2SA1179
Abstract: transistor marking 3k
Text: 2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES High breakdown voltage A L 3 3 C B Top View 1 MARKING 1 K Product Marking Code
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2SA1179
OT-23
-50mA,
28-Jan-2011
-10mA
2SA1179
transistor marking 3k
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PDF
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M8050
Abstract: m8050 NPN equivalent M8050 equivalent
Text: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11
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Original
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M8050
200mW
OT-23
M8050-L
M8050ation
800mA,
30MHz
25-Nov-2010
M8050
m8050 NPN equivalent
M8050 equivalent
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PDF
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marking C3Z
Abstract: marking C3Z SOT23 CMPTA44 npn 400V sot-23
Text: Central CMPTA44 TM Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z
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Original
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CMPTA44
OT-23
100mA
10MHz
26-September
marking C3Z
marking C3Z SOT23
CMPTA44
npn 400V sot-23
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PDF
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sot-23 Marking LG
Abstract: No abstract text available
Text: Central" CMPTA44 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z
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OCR Scan
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CMPTA44
OT-23
CP310
26-September
OT-23
sot-23 Marking LG
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PDF
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MMBT5551A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION
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Original
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MMBT5551
OT-23
MMBT5551L
MMBT5551-AE3-R
MMBT5551L-AE3-R
OT-23
QW-R206-010
MMBT5551A
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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Original
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OT-23
MMBT4401
OT-23
MMBT4401
-55to
150mA
150mA,
100MHz
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PDF
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MMBT4403
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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Original
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OT-23
OT-23
MMBT4403
-100A
-100A,
-150mA
-150mA,
-15mA
150mA,
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PDF
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MMBT4401
Abstract: marking 2X SOT23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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Original
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OT-23
MMBT4401
OT-23
MMBT4401
-55to
150mA
150mA,
100MHz
marking 2X SOT23
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PDF
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1N914
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5401DW1T1G FEATURE 6 ƽ We declare that the material of product compliance with RoHS requirements. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5401DW1T1G
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Original
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LMBT5401DW1T1G
3000/Tape
LMBT5401DW1T3G
10000/Tape
OT-363/SC-88
419B-01
419B-02.
1N914
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA05 SOT-23 TRANSISTOR NPN FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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Original
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OT-23
MMBTA05
OT-23
100mA
100mA,
100MHz
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PDF
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kst60
Abstract: 2SA1980 SUT487J
Text: SUT487J Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • General purpose transistor Feature • Two 2SA1980 chips in SOT-363 package Ordering Information Type NO. Marking SUT487J Package Code XX SOT-363 Outline Dimensions unit : mm
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Original
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SUT487J
2SA1980
OT-363
OT-363
KST-6005-002
kst60
SUT487J
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PDF
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MMBT3904 jiangsu
Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER
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Original
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OT-23
MMBT3906
MMBT3904
MMBT3904 jiangsu
MMBT3906
MMBT3906 SOT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: SUR481H Semiconductor NPN/PNP epitaxial planar Silicon Transistor Description • Digital transistor Features • Both SRC1210 chip and SRA2210 chip in SOT-353 package Ordering Information Type NO. Marking SUR481H Package Code X4 SOT-353 Outline Dimensions
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Original
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SUR481H
SRC1210
SRA2210
OT-353
OT-353
KST-5002-000
-10mA,
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PDF
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Untitled
Abstract: No abstract text available
Text: SUR482H Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description • Digital transistor Features • Both SRC1204 chip and SRA2219 chip in SOT-353 package Ordering Information Type NO. Marking SUR482H Package Code X5 SOT-353 Outline Dimensions
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Original
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SUR482H
SRC1204
SRA2219
OT-353
OT-353
KST-5003-000
-10mA
-10mA,
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PDF
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