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    TRANSISTOR MARKING R2S Search Results

    TRANSISTOR MARKING R2S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING R2S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bfr93a

    Abstract: No abstract text available
    Text: BFR93A NPN Silicon RF Transistor* • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 * Short term description 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR93A Marking R2s


    Original     		PDF BFR93A bfr93a

    marking 93A

    Abstract: BFR93A transistor marking R2s
    Text: BFR 93A NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93A R2s Pin Configuration


    Original     		PDF VPS05161 OT-23 900MHz Oct-13-1999 marking 93A BFR93A transistor marking R2s

    BFR93a

    Abstract: No abstract text available
    Text: BFR93A NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93A R2s Pin Configuration 1=B


    Original     		PDF BFR93A VPS05161 BFR93a

    R2S sot23

    Abstract: No abstract text available
    Text: BFR93A NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93A R2s Pin Configuration 1=B


    Original     		PDF BFR93A VPS05161 R2S sot23

    transistor marking R2s

    Abstract: transistor BFR93A BFR93A equivalent transistor of bfr93a
    Text: BFR93A NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93A R2s Pin Configuration 1=B


    Original     		PDF BFR93A VPS05161 900MHz Jun-27-2001 transistor marking R2s transistor BFR93A BFR93A equivalent transistor of bfr93a

    BFR93AW

    Abstract: marking code R2S 34
    Text: BFR93AW NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW


    Original     		PDF BFR93AW VSO05561 OT323 BFR93AW marking code R2S 34

    transistor marking R2s

    Abstract: Q62702-F1489
    Text: BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-323 Q62702-F1489 900MHz Dec-11-1996 transistor marking R2s Q62702-F1489

    marking 93A

    Abstract: Q62702-F1086 marking code R2S sot23 BFR93A marking R2s GMA marking Transistor BFR 900mhz
    Text: BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF OT-23 Q62702-F1086 900MHz Dec-12-1996 marking 93A Q62702-F1086 marking code R2S sot23 BFR93A marking R2s GMA marking Transistor BFR 900mhz

    BFR93AW

    Abstract: VSO05561
    Text: BFR93AW NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW


    Original     		PDF BFR93AW VSO05561 OT323 900MHz Jul-30-2001 BFR93AW VSO05561

    BFR93AW

    Abstract: No abstract text available
    Text: BFR93AW NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW


    Original     		PDF BFR93AW VSO05561 OT323 BFR93AW

    VSO05561

    Abstract: Transistor BFR 30
    Text: BFR 93AW NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93AW


    Original     		PDF VSO05561 OT-323 900MHz Oct-13-1999 VSO05561 Transistor BFR 30

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ DTC123JUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF FM120-M+ DTC123JUA FM1200-M OD-123+ OD-123H FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH

    chip die npn transistor

    Abstract: No abstract text available
    Text: WILLAS FM120-M DTC113ZUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF FM120-M DTC113ZUA FM1200-M OD-123+ OD-123H FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH chip die npn transistor

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ DTC144EUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF FM120-M+ DTC144EUA FM1200-M OD-123+ 94overvoltage FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH

    Untitled

    Abstract: No abstract text available
    Text: BFP620F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 1 • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz


    Original     		PDF BFP620F

    BFP620F

    Abstract: BFP420F
    Text: BFP620F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 1 • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz


    Original     		PDF BFP620F BFP620F BFP420F

    transistor marking R2s

    Abstract: bfr93aw marking r2s Infineon Technologies transistor 4 ghz marking code R2s BCR108W
    Text: BFR93AW NPN Silicon RF Transistor* • For low distortionbroadband amplifiers and oscillators up to 2 GHz at collector currents from 3 2 5 mA to 30 mA 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFR93AW OT323 transistor marking R2s bfr93aw marking r2s Infineon Technologies transistor 4 ghz marking code R2s BCR108W

    transistor marking R2s

    Abstract: marking code R2S sot23 equivalent transistor of bfr93a marking R2s MARKING CODE 21E SOT23 marking code R2s BFR93A Infineon Technologies transistor 4 ghz R2S sot23 BCW66
    Text: BFR93A NPN Silicon RF Transistor* • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFR93A transistor marking R2s marking code R2S sot23 equivalent transistor of bfr93a marking R2s MARKING CODE 21E SOT23 marking code R2s BFR93A Infineon Technologies transistor 4 ghz R2S sot23 BCW66

    transistor marking R2s

    Abstract: BFR93AT SC75
    Text: BFR93AT NPN Silicon RF Transistor Preliminary data 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR93AT VPS05996 900MHz Aug-09-2001 transistor marking R2s BFR93AT SC75

    transistor marking R2s

    Abstract: No abstract text available
    Text: BFR93AT NPN Silicon RF Transistor Preliminary data 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR93AT VPS05996 transistor marking R2s

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1489 OT-323 Q122QS3 900MHz

    marking 93A

    Abstract: transistor marking code 1325 b 11061
    Text: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 BFR 93A R2s Q62702-F1086 1= B ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1086 OT-23 900MHz marking 93A transistor marking code 1325 b 11061

    transistor marking R2s

    Abstract: AMI siemens BFR93AW k150t
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA 1=B Q62702-F1489 h R2s m BFR 93AW ro ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1489 OT-323 900MHz transistor marking R2s AMI siemens BFR93AW k150t

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


    OCR Scan     		PDF Q62702-F1086 OT-23 G122D45 fl235bà 0122Q IS21l2= 900MHz G1S5047