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    TRANSISTOR MARKING S52 Search Results

    TRANSISTOR MARKING S52 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING S52 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S53 MARKING

    Abstract: No abstract text available
    Text: FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=10KΩ, R2=10KΩ • Complement to FJY3002R Equivalent Circuit C C S52 E B E B SOT - 523F Absolute Maximum Ratings *


    Original     		PDF FJY4002R FJY4002R FJY3002R FJY4003R S53 MARKING

    Untitled

    Abstract: No abstract text available
    Text: S52xxM Semiconductor Low Drop Output Voltage Regulator Description The S52xxM is a u-cap 150mA linear voltage regulator in the SOT-25 package. This regulator has very low dropout voltage and very low ground current. It is designed especially for hand-sets, battery-powered devices and can be


    Original     		PDF S52xxM S52xxM 150mA OT-25 150mA KRB-3002)

    Untitled

    Abstract: No abstract text available
    Text: S52xxM Semiconductor Low Drop Output Voltage Regulator Description The S52xxM is a u-cap 150mA linear voltage regulator in the SOT-25 package. This regulator has very low dropout voltage and very low ground current. It is designed especially for hand-sets, battery-powered devices and can be


    Original     		PDF S52xxM S52xxM 150mA OT-25 150mA

    Untitled

    Abstract: No abstract text available
    Text: S52xxM Semiconductor Low Drop Output Voltage Regulator Description The S52xxM is a u-cap 150mA linear voltage regulator in the SOT-25 package. This regulator has very low dropout voltage and very low ground current. It is designed especially for hand-sets, battery-powered devices and can be


    Original     		PDF S52xxM S52xxM 150mA OT-25 150mA

    Untitled

    Abstract: No abstract text available
    Text: S52xxM Semiconductor Low Drop Output Voltage Regulator Description The S52xxM is a u-cap 150mA linear voltage regulator in the SOT-25 package. This regulator has very low dropout voltage and very low ground current. It is designed especially for hand-sets, battery-powered devices and can be


    Original     		PDF S52xxM S52xxM 150mA OT-25 150mA KSD-I5O005-000

    Untitled

    Abstract: No abstract text available
    Text: S52xxM Semiconductor Low Drop Output Voltage Regulator Description The S52xxM is a u-cap 150mA linear voltage regulator in the SOT-25 package. This regulator has very low dropout voltage and very low ground current. It is designed especially for hand-sets, battery-powered devices and can be controlled by a


    Original     		PDF S52xxM S52xxM 150mA OT-25 KSI-2064-000

    Untitled

    Abstract: No abstract text available
    Text: S52xxM Semiconductor Low Drop Output Voltage Regulator Description The S52xxM is a u-cap 150mA linear voltage regulator in the SOT-25 package. This regulator has very low dropout voltage and very low ground current. It is designed especially for hand-sets, battery-powered devices and can be


    Original     		PDF S52xxM S52xxM 150mA OT-25 150mA KSD-I5O005-001

    S5225

    Abstract: S5215M S5218M S5225M S5228M S5230M S5233M S5250M
    Text: S52xxM Low Drop Output Voltage Regulator Description The S52xxM is a u-cap 150mA linear voltage regulator in the SOT-25 package. This regulator has very low dropout voltage and very low ground current. It is designed especially for hand-sets, battery-powered devices and can be


    Original     		PDF S52xxM S52xxM 150mA OT-25 150mA KSD-I5O005-003 S5225 S5215M S5218M S5225M S5228M S5230M S5233M S5250M

    Untitled

    Abstract: No abstract text available
    Text: S52xxM Low Drop Output Voltage Regulator Description The S52xxM is a u-cap 150mA linear voltage regulator in the SOT-25 package. This regulator has very low dropout voltage and very low ground current. It is designed especially for hand-sets, battery-powered devices and can be


    Original     		PDF S52xxM S52xxM 150mA OT-25 150mA KSD-I5O005-003

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    SMD Transistors w04

    Abstract: smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5
    Text: Vishay Telefunken Marking on Packages1 view from top Cathodering unwind TO50 3 Pin and TO50 (4 Pin) SOD80 – QuadroMELF Label with information of TYPE on reel and package view from top view from top Cathodering unwind Cathodering unwind SOD80 MiniMELF Label with information of TYPE on reel and package


    Original     		PDF OT143 BFS17W BFS17AW S858TA3 TSDF1205W S503TRW TSDF1220W S504TRW TSDF1250W S505TRW SMD Transistors w04 smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5

    Untitled

    Abstract: No abstract text available
    Text: FJX4002R FJX4002R Switching Application Bias Resistor Built In 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJX3002R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit


    Original     		PDF FJX4002R FJX3002R OT-323

    S5230

    Abstract: NE5205 NE5230 NE5230D NE5230N SA5230 SA5230N SE5230 NE5230NG
    Text: NE5230, SA5230, SE5230 Low Voltage Operational Amplifier The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will


    Original     		PDF NE5230, SA5230, SE5230 NE5230 NE5230/D S5230 NE5205 NE5230D NE5230N SA5230 SA5230N SE5230 NE5230NG

    NE5230 equivalent

    Abstract: NE5230 NE5205 SE5230 s5230 NE5230DG NE5230N SA5230 SA5230N s5230 phone
    Text: NE5230, SA5230, SE5230 Low Voltage Operational Amplifier The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will


    Original     		PDF NE5230, SA5230, SE5230 NE5230 NE5230/D NE5230 equivalent NE5205 SE5230 s5230 NE5230DG NE5230N SA5230 SA5230N s5230 phone

    Untitled

    Abstract: No abstract text available
    Text: NE5230, SA5230, SE5230 Low Voltage Operational Amplifier The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will


    Original     		PDF NE5230, SA5230, SE5230 NE5230 NE5230/D

    TN2010T

    Abstract: No abstract text available
    Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original     		PDF TN2010T O-236 OT-23) S-52426--Rev. 14-Apr-97 TN2010T

    TN2010T

    Abstract: No abstract text available
    Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original     		PDF TN2010T O-236 OT-23) S-52426--Rev. 14-Apr-97 TN2010T

    N1 MARKING CODE

    Abstract: TN0201T
    Text: TN0201T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) 20 rDS(on) Max (W) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V VGS(th) (V) ID (A) 1 0 to 33.0 1.0 0 39 0.39 Features Benefits Applications D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS


    Original     		PDF TN0201T O-236 OT-23) S-52426--Rev. 14-Apr-97 N1 MARKING CODE TN0201T

    S52B

    Abstract: FJX3002R FJX4002R
    Text: FJX4002R FJX4002R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJX3002R 2 SOT-323 1 1. Base 2. Emitter 3. Collector Equivalent Circuit


    Original     		PDF FJX4002R FJX3002R OT-323 S52B FJX3002R FJX4002R

    FJX3002R

    Abstract: FJX4002R
    Text: FJX4002R FJX4002R Switching Application Bias Resistor Built In 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJX3002R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit


    Original     		PDF FJX4002R FJX3002R OT-323 FJX3002R FJX4002R

    TP0202T

    Abstract: No abstract text available
    Text: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D


    Original     		PDF TP0202T O-23ion S-52426--Rev. 14-Apr-97 TP0202T

    TP0202T

    Abstract: No abstract text available
    Text: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D D D


    Original     		PDF TP0202T O-236 S-52426--Rev. 14-Apr-97 TP0202T

    S52B

    Abstract: FJX3002R FJX4002R
    Text: FJX4002R FJX4002R Switching Application Bias Resistor Built In 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJX3002R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit


    Original     		PDF FJX4002R FJX3002R OT-323 S52B FJX3002R FJX4002R

    Untitled

    Abstract: No abstract text available
    Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original     		PDF TN2010T O-236 OT-23) 08-Apr-05