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    TRANSISTOR MARKING ST4 Search Results

    TRANSISTOR MARKING ST4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING ST4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ST4460FX High voltage fast-switching NPN Power transistor General features • High voltage and high current capability ■ Low spread of dynamic parameters ■ Low base-drive requirements ■ Very high switching speed ■ High ruggedness ■ Fully insulated power package U.L. compliant


    Original     		PDF ST4460FX ISOWATT218FX 4460FX

    transistor 1000V 6A

    Abstract: 4460FX ISOWATT218FX JESD97 ST4460FX st 16a 500v
    Text: ST4460FX High voltage fast-switching NPN Power transistor General features • High voltage and high current capability ■ Low spread of dynamic parameters ■ Low base-drive requirements ■ Very high switching speed ■ High ruggedness ■ Fully insulated power package U.L. compliant


    Original     		PDF ST4460FX ISOWATT218FX 4460FX transistor 1000V 6A 4460FX ISOWATT218FX JESD97 ST4460FX st 16a 500v

    Untitled

    Abstract: No abstract text available
    Text: ST4460FX High voltage fast-switching NPN Power transistor General features • High voltage and high current capability ■ Low spread of dynamic parameters ■ Low base-drive requirements ■ Very high switching speed ■ High ruggedness ■ Fully insulated power package U.L. compliant


    Original     		PDF ST4460FX ISOWATT218FX

    Untitled

    Abstract: No abstract text available
    Text: STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2932F 2002/95/EC STAC2932F STAC244F

    stac2942

    Abstract: STAC2942B FERRITE TOROID transistor marking code HF
    Text: STAC2942B RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2942B 2002/95/EC STAC2942B STAC244B STAC2942 FERRITE TOROID transistor marking code HF

    stac2942

    Abstract: STAC2942B
    Text: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2942B 2002/95/EC STAC2942B STAC244B STAC2942 STAC2942BW

    stac2942

    Abstract: No abstract text available
    Text: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21 dB gain @ 175 MHz • In compliance with the 2002/95/EC European


    Original     		PDF STAC2942B 2002/95/EC STAC244B STAC2942B STAC2942BW STAC2942 DocID15501 stac2942

    Untitled

    Abstract: No abstract text available
    Text: SD2918 RF power transistor HF/VHF/UHF n-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30 W min. with 18 dB gain @ 30 MHz Description M113 Epoxy sealed The SD2918 is a n-channel MOS field-effect RF


    Original     		PDF SD2918 SD2918

    C1812X7R501-103KNE

    Abstract: ATC200B103KW50X ELNA America Elna axial ELNA RVS 2643801002 elna 50v sd2918 M113 RVS-50V100M-R
    Text: SD2918 RF power transistor HF/VHF/UHF n-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30 W min. with 18 dB gain @ 30 MHz Description M113 Epoxy sealed The SD2918 is a n-channel MOS field-effect RF


    Original     		PDF SD2918 SD2918 C1812X7R501-103KNE ATC200B103KW50X ELNA America Elna axial ELNA RVS 2643801002 elna 50v M113 RVS-50V100M-R

    FERRITE TOROIDAL CORE DATA

    Abstract: STAC2932B ferrite toroidal
    Text: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive


    Original     		PDF STAC2932B 2002/95/EC STAC244B STAC2932B STAC2932 FERRITE TOROIDAL CORE DATA ferrite toroidal

    FERRITE TOROIDAL CORE DATA

    Abstract: 200 pF air variable capacitor
    Text: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive


    Original     		PDF STAC2932B 2002/95/EC STAC244B STAC2932B STAC29 FERRITE TOROIDAL CORE DATA 200 pF air variable capacitor

    STAC2942F

    Abstract: Part Marking ST mosfets marking code 8Ff 17122 RG316-25
    Text: STAC2942F HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive


    Original     		PDF STAC2942F 2002/95/EC STAC2942F STAC244F STAC2942FW Part Marking ST mosfets marking code 8Ff 17122 RG316-25

    Untitled

    Abstract: No abstract text available
    Text: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 300 W min. with 20 dB gain @ 175 MHz • In compliance with the 2002/95/EC European


    Original     		PDF STAC2932B 2002/95/EC STAC244B STAC2932B DocID15497

    Untitled

    Abstract: No abstract text available
    Text: SD2942 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350 W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed The SD2942 is a gold metallized N-channel MOS


    Original     		PDF SD2942 SD2942 SD2932. SD2942W

    constant current constant voltage controller sot23

    Abstract: 33xxA High operating temp Photocoupler constant current power supply circuit diagram ST433B ST433 dc constant current power supply
    Text: STANSON TECHNOLOGY Constant Voltage and Constant Current Controller ST8433 Pb-Free DESCRIPTION The ST8433 is high-voltage four-terminal adjustable voltage references, with over current protection feature. The ST8433 is a one chip solution to a 2.5V precision voltage reference


    Original     		PDF ST8433 ST8433 O-92-4 100mA O92-4 constant current constant voltage controller sot23 33xxA High operating temp Photocoupler constant current power supply circuit diagram ST433B ST433 dc constant current power supply

    STAC2942B

    Abstract: stac2942 FERRITE TOROID R0060
    Text: STAC2942B RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive


    Original     		PDF STAC2942B 2002/95/EC STAC244B STAC2942B STAC2942 stac2942 FERRITE TOROID R0060

    STAC2942

    Abstract: STAC244 STAC2942B-I FERRITE TOROID R4270
    Text: STAC2942B-I RF power transistor HF/VHF/UHF N-channel MOSFETs Custom data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2942B-I 2002/95/EC STAC2942B-I STAC244B STAC2942 STAC2942 STAC244 FERRITE TOROID R4270

    STAC2942F

    Abstract: FERRITE TOROID 43 toroid core stac2942
    Text: STAC2942F RF power transistor HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2942F 2002/95/EC STAC244F STAC2942F FERRITE TOROID 43 toroid core stac2942

    ZENER MARKING C8 ST

    Abstract: CAPACITOR 64 680 4J diode t25 4 L5 SD2932 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b
    Text: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS


    Original     		PDF SD2932 SD2932 SD2932W ZENER MARKING C8 ST CAPACITOR 64 680 4J diode t25 4 L5 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b

    PN4403

    Abstract: R2X marking R2X e 2N4401 520 st4401
    Text: Transistors UMT4401 / SST4401 / MMST4401 /2N4401 I NPN Medium Power Transistor Switching UMT4401 /SST4401 /M M ST4401/2N4401 • F e a tu r e s ^External dimensions (Units : mm) 1 ) 8 V ceo < 4 0 V ( lc = 1 m A ) 2 ) Complem ents the UMT4403/SST4403/MMST4403/PN4403.


    OCR Scan     		PDF UMT4401 SST4401 MMST4401 /2N4401 /SST4401 ST4401/2N4401 UMT4403/SST4403/MMST4403/PN4403. UMT4401 PN4403 R2X marking R2X e 2N4401 520 st4401

    transistor R2t

    Abstract: ST4401 T2907A marking R2t
    Text: UMT44031 SST4403 / MMST4403 / 2N4403 Transistors I PNP Medium Power Transistor Switching UMT4403 / SST4403 / MMST4403 / 2N4403 • Fe a tu re s •E xtern al dimensions (Unita : mm) 1 ) BV ceq< — 40V (lc = 1 m A ) 2 ) Complements the U M T4401/S ST4401/M M ST4401 /PN 4401.


    OCR Scan     		PDF UMT44031 SST4403 MMST4403 2N4403 UMT4403 T4401/S ST4401/M transistor R2t ST4401 T2907A marking R2t

    transistor marking t2T

    Abstract: T2T TRANSISTOR ST4403
    Text: Philips Semiconductors Product specification PNP switching transistor PMST4403 FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear amplification. DESCRIPTION


    OCR Scan     		PDF OT323 PMST4401. PMST4403 PMST4403 ST4403 transistor marking t2T T2T TRANSISTOR ST4403

    KST4403

    Abstract: No abstract text available
    Text: KST4403 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C | 1“ Characteristic i Symbol Rating 1 Unit 1 i Collector-Base Voltage | Collector-Emitter Voltage j Emitter-Base Voltage j Collector Current Collector Dissipation


    OCR Scan     		PDF KST4403 OT-23 140kHz 150mA, ST4403 -300-SC0 KST4403

    MMST4401

    Abstract: MMST4403
    Text: TRANSYS ELECTRONICS LIMITED MMST4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available MMST4401 Ultra-Small Surface Mount Package SOT-323 -H h -A fcl TOP VIEW Mechanical Data_


    OCR Scan     		PDF MMST4403 MMST4401) OT-323, MIL-STD-202, OT-323 MMST4403 -20mA, 100MHz -150mA, -15mA MMST4401