Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W
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OCR Scan
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10kii,
47kii)
Q62702-C2280
OT-323
300ns;
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-| = 10ki , R2 = 47k£2) Ordering Code Pin Configuration WNs Q62702-C2280 1 =B Package 2=E o Marking BCR 185W II
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OCR Scan
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Q62702-C2280
OT-323
A235b05
aa3Sb05
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PDF
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transistor 7g
Abstract: Q62702-C2263
Text: SIEMENS BCR 185 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor Ri=10k£î, R2=47kiî Type Marking Ordering Code BCR 185 WNs Pin Configuration Q62702-C2263 1=B Package 2=E 3=C SOT-23
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OCR Scan
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Q62702-C2263
OT-23
300ns;
transistor 7g
Q62702-C2263
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PDF
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Q62702-C2280
Abstract: No abstract text available
Text: BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10kΩ, R2 = 47kΩ Type Marking Ordering Code Pin Configuration BCR 185W WNs 1=B Q62702-C2280 Package 2=E 3=C SOT-323
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Original
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Q62702-C2280
OT-323
Nov-27-1996
Q62702-C2280
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 185 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=10ki!, R2=47kii Type Marking Ordering Code Pin Configuration BCR 185 WNs Q62702-C2263 1=B Package 2=E 3=C SOT-23
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OCR Scan
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47kii)
Q62702-C2263
OT-23
flE35b05
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PDF
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C2263
Abstract: Q62702-C2263
Text: BCR 185 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 185 WNs 1=B Q62702-C2263 Package 2=E 3=C SOT-23 Maximum Ratings
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Original
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Q62702-C2263
OT-23
Nov-27-1996
C2263
Q62702-C2263
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PDF
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Untitled
Abstract: No abstract text available
Text: BCR 185S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in biase resistor (R1=10kΩ, R2=47kΩ) Type Marking Ordering Code Pin Configuration
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Original
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OT-363
Nov-27-1996
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PDF
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VSO05561
Abstract: No abstract text available
Text: BCR 185W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R 1=10kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 185W WNs Pin Configuration 1=B 2=E Package
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Original
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VSO05561
EHA07183
OT-323
Oct-19-1999
VSO05561
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PDF
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marking code 718 sot363
Abstract: No abstract text available
Text: SIEMENS BCR 185S PNP Silicon Digital Transistor Array >Switching Circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in biase resistor (R ^IO kß, R2=47kfl) Type BCR 185S Marking Ordering Code Pin Configuration
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OCR Scan
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47kfl)
OT-363
marking code 718 sot363
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PDF
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wns marking
Abstract: BCR185W VSO05561
Text: BCR185W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R 1=10k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR185W WNs Pin Configuration 1=B 2=E Package 3=C SOT323
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Original
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BCR185W
VSO05561
EHA07183
OT323
Jul-20-2001
wns marking
BCR185W
VSO05561
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PDF
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BCR185
Abstract: DSA0011196 wns marking
Text: BCR185 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR185 WNs Pin Configuration 1=B 2=E Package 3=C SOT23
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Original
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BCR185
VPS05161
EHA07183
Dec-13-2001
BCR185
DSA0011196
wns marking
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PDF
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BCR185W
Abstract: VSO05561
Text: BCR185W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R 1=10k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR185W WNs Pin Configuration 1=B 2=E Package 3=C SOT323
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Original
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BCR185W
VSO05561
EHA07183
OT323
Dec-13-2001
BCR185W
VSO05561
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PDF
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BCR185
Abstract: No abstract text available
Text: BCR185 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR185 WNs Pin Configuration 1=B 2=E Package 3=C SOT23
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Original
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BCR185
VPS05161
EHA07183
Jul-16-2001
BCR185
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PDF
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Untitled
Abstract: No abstract text available
Text: BCR 185 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 185 WNs Pin Configuration 1=B 2=E Package 3=C SOT-23
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Original
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VPS05161
EHA07183
OT-23
Oct-19-1999
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PDF
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transistor WT3
Abstract: No abstract text available
Text: Product specification WNM3003 N-Channel, 30V, 4.0A, Power MOSFET V BR DSS Rds(on) () 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS
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Original
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WNM3003
OT-23
WNM3003
transistor WT3
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Untitled
Abstract: No abstract text available
Text: Product specification WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS V Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
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Original
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WNM2024
OT-23
WNM2024
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS V Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 20 0.320@ VGS=1.8V SOT-23 Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS
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Original
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WNM2020
OT-23
WNM2020
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PDF
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WNM2025
Abstract: No abstract text available
Text: Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS V Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
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Original
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WNM2025
OT-23-3L
WNM2025
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS V Rds(on) (ȍ) 0.126@ VGS=10V 45 0.142@ VGS=4.5V 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 Descriptions D 3 The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
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Original
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WNM4006
OT-23
WNM4006
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PDF
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w34 transistor
Abstract: W34 SOT-89
Text: Product specification WNM2034 N-Channel, 20V, 3.6A, Power MOSFET VDS V 20 Rdson (ȍ) 0.037 @ 10V 0.045 @ 4.5V Descriptions SOT-23 The WNM2034 is N-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS
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Original
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WNM2034
OT-23
WNM2034
w34 transistor
W34 SOT-89
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transistor w04
Abstract: marking W04 w04 transistor sot 23 marking CODE W04 sot-23 w04 sot transistor SOT-23 w04 w04 sot-23 sot 23 w04 transistor marking w04 transistor sot w04
Text: Product specification WNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS V Rds(on) (Ω) 0.038@ VGS=4.5V 0.044@ VGS=2.5V 20 0.052@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
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Original
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WNM2023
OT-23-3L
WNM2023
transistor w04
marking W04
w04 transistor sot 23
marking CODE W04 sot-23
w04 sot
transistor SOT-23 w04
w04 sot-23
sot 23 w04
transistor marking w04
transistor sot w04
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PDF
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transistor WT6
Abstract: WT6 SOT23 MARKING transistor WT6 45 WT6 transistor
Text: Product specification WNM2027 N-Channel, 20V, 3.6A, Power MOSFET V BR DSS 20 Rds(on) Id (Max. m) (A) 45 @ 4.5V 3.6 55 @ 2.5V 3.1 66 @ 1.8V 1.5 SOT-23 D Descriptions 3 The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology
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Original
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WNM2027
OT-23
WNM2027
Ext00
transistor WT6
WT6 SOT23 MARKING
transistor WT6 45
WT6 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification WNM2016 N-Channel, 20V, 3.2A, Power MOSFET V BR DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS
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Original
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WNM2016
OT-23
WNM2016
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PDF
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STWD100xX
Abstract: STWD100xP stwd100ny STWD100NPWY3F STWD100xY WNP SOT23-5 JESD97 SC70-5 STWD100 transistor marking WY
Text: STWD100 Watchdog timer circuit Features • Current consumption 13 µA typ. ■ Available watchdog timeout periods are 3.4 ms, 6.3 ms, 102 ms and 1.6 s ■ Chip-enable input ■ Open drain or push-pull WDO output ■ Operating temperature range: –40 to +125 °C
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Original
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STWD100
OT23-5,
SC70-5
OT323-5)
OT23-5
SC70-5,
OT323-5
STWD100xX
STWD100xP
stwd100ny
STWD100NPWY3F
STWD100xY
WNP SOT23-5
JESD97
SC70-5
STWD100
transistor marking WY
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PDF
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