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    TRANSISTOR MARKING YD GHZ Search Results

    TRANSISTOR MARKING YD GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING YD GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor marking YD ghz

    Abstract: 2SC4926
    Text: 2SC4926 Silicon NPN Bipolar Transistor Application MPAK-4 VHF & UHF wide band amplifire Features 2 • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 MHz 3 1 4 1. Collector 2. Emitter


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    2SC4926 transistor marking YD ghz 2SC4926 PDF

    transistor marking YD ghz

    Abstract: 122-5 MAG Hitachi DSA002755 IC Marking 812 yd 1208
    Text: 2SC4995 Silicon NPN Epitaxial ADE-208-013 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline 2SC4995 Absolute Maximum Ratings Ta = 25°C


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    2SC4995 ADE-208-013 transistor marking YD ghz 122-5 MAG Hitachi DSA002755 IC Marking 812 yd 1208 PDF

    transistor zo 607

    Abstract: zo 607 zo 607 MA zo 107 ZO 109 2SC4995 equivalent ZO 607 transistor zo 109 ZO 103
    Text: 2SC4995 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CMPAK–4 Features 4 • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 MHz 3 1 2 1. Collector 2. Emitter


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    2SC4995 transistor zo 607 zo 607 zo 607 MA zo 107 ZO 109 2SC4995 equivalent ZO 607 transistor zo 109 ZO 103 PDF

    zo 607

    Abstract: ZO 607 MA transistor zo 607 ZO 109 TRANSISTOR ECG 377 zo 107 equivalent ZO 607 ZO 103 zo 103 ma 2SC4995
    Text: 2SC4995 Silicon NPN Epitaxial ADE-208-013A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline


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    2SC4995 ADE-208-013A zo 607 ZO 607 MA transistor zo 607 ZO 109 TRANSISTOR ECG 377 zo 107 equivalent ZO 607 ZO 103 zo 103 ma 2SC4995 PDF

    transistor zo 607

    Abstract: ZO 607 MA zo 607 zo 107 equivalent ZO 607 ZO 109 YD 1270 zo 103 ma zo 103 ma 75 607 ADE-208-013
    Text: 2SC4995 Silicon NPN Epitaxial ADE-208-013 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK–4 2 3


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    2SC4995 ADE-208-013 transistor zo 607 ZO 607 MA zo 607 zo 107 equivalent ZO 607 ZO 109 YD 1270 zo 103 ma zo 103 ma 75 607 ADE-208-013 PDF

    transistor A1277

    Abstract: No abstract text available
    Text: 2SC4995 Silicon NPN Epitaxial REJ03G0194-0300Z Previous ADE-208-013A (Z ) Rev.3.00 Apr.05.2004 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ. • High gain, low noise figure PG = 16.5 dB Typ. , NF = 1.1 dB Typ. at f = 900 MHz


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    2SC4995 REJ03G0194-0300Z ADE-208-013A transistor A1277 PDF

    ZO 607 MA

    Abstract: transistor zo 607 zo 103 ma zo 607 2SC4995 transistor marking YD ghz
    Text: 2SC4995 Silicon NPN Epitaxial REJ03G0194-0300Z Previous ADE-208-013A (Z ) Rev.3.00 Apr.05.2004 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ. • High gain, low noise figure PG = 16.5 dB Typ. , NF = 1.1 dB Typ. at f = 900 MHz


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    2SC4995 REJ03G0194-0300Z ADE-208-013A ZO 607 MA transistor zo 607 zo 103 ma zo 607 2SC4995 transistor marking YD ghz PDF

    ZO 607 MA

    Abstract: zo 607 transistor zo 607 TRANSISTOR 618 zo 103 ma zo 103 ma 75 607 zo 107 2SC4995
    Text: 2SC4995 Silicon NPN Epitaxial REJ03G0194-0300Z Previous ADE-208-013A (Z ) Rev.3.00 Apr.05.2004 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ. • High gain, low noise figure PG = 16.5 dB Typ. , NF = 1.1 dB Typ. at f = 900 MHz


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    2SC4995 REJ03G0194-0300Z ADE-208-013A ZO 607 MA zo 607 transistor zo 607 TRANSISTOR 618 zo 103 ma zo 103 ma 75 607 zo 107 2SC4995 PDF

    zo 607 MA

    Abstract: transistor zo 607 2SC4995 yd 1208 TRANSISTOR ECG 377
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    zo 607 MA

    Abstract: transistor zo 607 2SC4995
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    philips ecg master replacement guide

    Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
    Text: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete


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    ECG transistor replacement guide book free

    Abstract: philips ecg master replacement guide one chip tv ic 8873 ecg semiconductors master replacement guide philips ecg semiconductors master replacement guide cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor
    Text: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete


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    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    stk 453 030 A power amplifier ic

    Abstract: ic audio power amp stk 2028 transistor b740 HCPL 1458 8 pin opto ptc 14749 Atlas PWM 3021 LTS 543 pin common cathode display ic stk 432 050 CXA-0271 cross reference marking code x328 SMD ic
    Text: OptoElectronics Displays 3M Touch Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 Conflux . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Digital View . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51


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    RS232 782-TOIM4232 stk 453 030 A power amplifier ic ic audio power amp stk 2028 transistor b740 HCPL 1458 8 pin opto ptc 14749 Atlas PWM 3021 LTS 543 pin common cathode display ic stk 432 050 CXA-0271 cross reference marking code x328 SMD ic PDF

    transistor marking YD ghz

    Abstract: 2SC4995 z 0607 ma yd 1208 transistor m 4995
    Text: HITACHI 2SC4995-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire C M P A K -4 Features • High gain bandwidth product f j = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 MHz 1. 2. 3. 4.


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    2SC4995-----Silicon cut369 transistor marking YD ghz 2SC4995 z 0607 ma yd 1208 transistor m 4995 PDF

    A774

    Abstract: No abstract text available
    Text: 2SC4995 Silicon NPN Epitaxial HITACHI Application VH F / UHF wide band amplifier Features • High gain bandwidth product fx = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline C M P A K -4 1. 2. 3. 4. 770


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    2SC4995 ADE-208-013 A774 PDF

    hl 4929

    Abstract: 34T sot-363 ATIC 164 D2 48 pin
    Text: That HEWLETT WL'kM PACKARD 1.5 GHz Low N oise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, A ctive Bias Circuit Surface Mount Package SOT-363 SC -70 D escription Pin C onnections and Package Marking The INA-12063 is a unique RFIC


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    INA-12063 OT-363 INA-12063 OT-363 OT-143 5965-5365E 4447S GD1S32Û hl 4929 34T sot-363 ATIC 164 D2 48 pin PDF

    esis power ups

    Abstract: Melcher LT 1740 ha 12017 melcher psr esis power charger UPS chloride melcher k 4000 converter schroff power supply external 1740-7Z Melcher t1000
    Text: Rugged Environment A C -D C Converters > 1 0 0 W T-Family T-Family 500 W AC-DC Converters Input to output isolation Single output • Battery charging for 24, 36, 48 V batteries with reix ^ x frïô të iië ffip ë râ tü rô iô ^ • immune to transients and disturbances according to


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    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc PDF

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


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    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr PDF

    pj 929 diode picture

    Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
    Text: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits


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    BA481 SAA7197 SAA7199B TDA4680 TDA4685 pA733C LFC02 MEH469 pj 929 diode picture bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor PDF

    TELEVISION EHT TRANSFORMERS

    Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
    Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes


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    LCD01 TELEVISION EHT TRANSFORMERS BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31 PDF

    chn 834 TRANSISTOR

    Abstract: High-Power 202A MOSFET CA3458T 40468A 3N128 equivalent ta7657 DIODE chn 548 TA7374 Thyristor chn 542 cd 40938
    Text: RCA Solid State Total Data Service System The RCA Solid State DATABOOKS are supplemented throughout the year by a comprehensive data service system that keeps you aware of all new device announcements and lets you obtain as much or as little product information as


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    -206A CR208 CR210 CR212 CR280 CR301 CR303 CR304 CR306 CR311 chn 834 TRANSISTOR High-Power 202A MOSFET CA3458T 40468A 3N128 equivalent ta7657 DIODE chn 548 TA7374 Thyristor chn 542 cd 40938 PDF