Untitled
Abstract: No abstract text available
Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver
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NTE346
NTE346
500MHz
50mAdc
12Vdc
175MHz
100mW,
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NTE346
Abstract: npn 1W 40V to39
Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver
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NTE346
NTE346
500MHz
50mAdc
12Vdc
175MHz
100mW,
npn 1W 40V to39
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BUR51
Abstract: ms80A transistor case To 106
Text: BUR51 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.
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BUR51
BUR51
ms80A
transistor case To 106
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BUR51
Abstract: No abstract text available
Text: BUR51 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.
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BUR51
BUR51
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BUR51
Abstract: No abstract text available
Text: BUR51 HIGH CURRENT NPN SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.
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BUR51
BUR51
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BUR51
Abstract: No abstract text available
Text: BUR51 HIGH CURRENT NPN SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.
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BUR51
BUR51
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2n3019 equivalent
Abstract: 2n3019 transistor test 2N3700 "nickel cap"
Text: 2N3019 Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019
MIL-PRF-19500/391
2N3019
MIL-PRF-19500/391.
T4-LDS-0185,
2n3019 equivalent
2n3019 transistor
test 2N3700
"nickel cap"
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2n3057
Abstract: No abstract text available
Text: 2N3057A Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3057A NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3057A
MIL-PRF-19500/391
2N3057A
2N3057
MIL-PRF-19500/391.
T4-LDS-0185-1,
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6822
Abstract: 2N3019S "nickel cap"
Text: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019S
MIL-PRF-19500/391
2N3019S
2N3019
MIL-PRF-19500/391.
T4-LDS-0185-4,
6822
"nickel cap"
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PUMF12
Abstract: MCE153
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product data sheet 2002 Nov 07 NXP Semiconductors Product data sheet PNP general purpose transistor; NPN resistor-equipped transistor
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MBD128
PUMF12
OT363
OT323
SC-70)
613514/01/pp7
PUMF12
MCE153
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PUMF11
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor
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MBD128
PUMF11
OT363
OT323
SC-70)
613514/01/pp7
PUMF11
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Untitled
Abstract: No abstract text available
Text: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019S
MIL-PRF-19500/391
2N3019S
O-205AD)
2N3019
MIL-PRF-19500/391.
T4-LDS-0185-4,
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PUMF12
Abstract: 10311 PNP TRANSISTOR SOT363
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product data sheet 2002 Nov 07 NXP Semiconductors Product data sheet PNP general purpose transistor; NPN resistor-equipped transistor
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MBD128
PUMF12
OT363
OT323
SC-70)
613514/01/pp7
PUMF12
10311
PNP TRANSISTOR SOT363
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PNP TRANSISTOR SOT363
Abstract: PUMF11
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor
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MBD128
PUMF11
OT363
OT323
SC-70)
613514/01/pp7
PNP TRANSISTOR SOT363
PUMF11
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BD239C
Abstract: BD240C JESD97 transistor marking 1a
Text: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance
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BD239C
BD240C.
O-220
BD239C
BD240C
JESD97
transistor marking 1a
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2N1046
Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
Text: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an
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2N1046
DC-11
germanium power transistor
diode germanium tu 38 f
Germanium Transistor
Texas Germanium
639 TRANSISTOR PNP
Germanium power
diode germanium tu 38 e
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BUR51
Abstract: No abstract text available
Text: SGS-THOMSON BUR51 HIGH CURRENT NPN SILICON TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.
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BUR51
BUR51
P003I
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blw95
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a
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bbS3T31
0DS1S14
blw95
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E J> bt.53^31 002A730 253 APX BFS23A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran
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002A730
BFS23A
175MHz
00Bfl73t>
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PR37 RESISTOR
Abstract: PR37 resistors
Text: N AUER PHILIPS/DISCRETE b^E » bbS3^31 □□2'ISIS D72 BLW96 IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, A B and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents
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BLW96
PR37 RESISTOR
PR37 resistors
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 QOlSQb? fl • OLE D MSB11900Y T - 3 3-1ST PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor two transistor sections intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IFF applications at
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MSB11900Y
2x160
DD1S070
7Z21014
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized
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BLW60C
nsforFigs16and17:
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BFS22A
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE bbS3^31 DD5fl7ES Ifl? I IAPX BFS22A J> V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran
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BFS22A
D02fl7ET
BFS22A
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BLY94
Abstract: philips bly94
Text: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran
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002T75fl
BLY94
7Z67S60
BLY94
philips bly94
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