E2955T
Abstract: 2955T IC 4047 datasheet HMJE2955T PT 10000
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6736 Issued Date : 1992.12.15 Revised Date : 2002.04.03 Page No. : 1/4 HMJE2955T PNP EPITAXIAL PLANAR TRANSISTOR Description The HMJE2955T is designed for general purpose of amplifier and switching applications.
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HE6736
HMJE2955T
HMJE2955T
O-220
E2955T
2955T
IC 4047 datasheet
PT 10000
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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T2-955V
Abstract: T2955V 2955V MTD2955VT4 MTD2955V-D
Text: MTD2955V Power MOSFET 12 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge
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MTD2955V
MTD2955V/D
T2-955V
T2955V
2955V
MTD2955VT4
MTD2955V-D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP
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MMFT2955E/D
MMFT2955E
MMFT2955E/D*
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NT 2955 ON transistor
Abstract: Marking 2955 MMFT2955ET1 fr 2955 2N3904 AN569 MMFT2955E MMFT2955ET3 SMD310 2955 DPAK
Text: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP
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MMFT2955E/D
MMFT2955E
NT 2955 ON transistor
Marking 2955
MMFT2955ET1
fr 2955
2N3904
AN569
MMFT2955E
MMFT2955ET3
SMD310
2955 DPAK
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T2955V
Abstract: T2-955V 2955V MTD2955VT4G MTD2955V MTD2955VT4 dpak-3 369D AN569 MTD2955VG
Text: MTD2955V Power MOSFET 12 A, 60 V P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge
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Original
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MTD2955V
MTD2955V/D
T2955V
T2-955V
2955V
MTD2955VT4G
MTD2955V
MTD2955VT4
dpak-3
369D
AN569
MTD2955VG
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T2955V
Abstract: 2955v T2-955V MTD2955VT4G MTD2955VT4 369D AN569 MTD2955V MTD2955VG
Text: MTD2955V Power MOSFET 12 A, 60 V P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge
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Original
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MTD2955V
MTD2955V/D
T2955V
2955v
T2-955V
MTD2955VT4G
MTD2955VT4
369D
AN569
MTD2955V
MTD2955VG
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PDF
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Untitled
Abstract: No abstract text available
Text: MTD2955V Power MOSFET 12 A, 60 V P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge
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Original
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MTD2955V
MTD2955V/D
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PDF
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T2-955V
Abstract: 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C
Text: MTD2955V Power MOSFET 12 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge
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Original
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MTD2955V
MTD2955V/D
T2-955V
2955v
T2955V
MTD2955VT4
369D
AN569
MTD2955V
SMD310
369C
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PDF
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T2955V
Abstract: T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel
Text: MTD2955V Power MOSFET 12 Amps, 60 Volts P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge
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Original
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MTD2955V
r14525
MTD2955V/D
T2955V
T2-955V
MTD2955VT4
MTD2955V
AN569
MTD2955V1
2955v
Power MOSFET 12 Amps, 60 Volts p-Channel
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transistor mj 3055
Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
Text: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •
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D2955/D
MJE2955
MJE3055
transistor mj 3055
d2955
transistor Amp 3055
Motorola transistors MJE3055 TO 127
mje3055 127 case data
Motorola transistors MJE3055
Motorola transistors MJE2955
transistor 30 j 127
L 3055 motorola
mje2955 data
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PDF
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P2955E
Abstract: 2955E TP2955E TP2955 sped sipa
Text: MOTOROLA Orctor Ms document SEMICONDUCTOR TECHNICAL DATA by MTP2955E/D Designer's Data Sheet M T P 2955E TM O S E-FET™ P o w er Field E ffe c t Transistor M otorola P rila rrtd Daylca P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES
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MTP2955E/D
8S036.
MTP2955BD
P2955E
2955E
TP2955E
TP2955
sped
sipa
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PDF
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2955v
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP 2955V TM OS V™ Pow er Field E ffect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This
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MTP2955V/D
2955v
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PDF
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MTD2955V
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TD 2955V TM O S V™ Pow er Field E ffe c t Transistor DPAK for S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P-Channel Enhancement-Mode Silicon Gate
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MTD2955V/D
MTD2955V
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PDF
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2955E
Abstract: MTA2955E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTA2955E Fully Isolated TMOS E-FET 1TM Pow er Field E ffect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Isolated T0-220 TMOS POWER FET 7.0 AMPERES 60 VOLTS RDS on = 0.30 OHM
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T0-220
O-220
b3b7254
2955E
b3b7554
MTA2955E
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PDF
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Marking 2955
Abstract: MMFT2955ET1 MMFT2955E 2955 mosfet
Text: MOTOROLA O rder this docum ent by M M FT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount This advanced E -F E T is a TM O S medium pow er M O SFET designed to withstand high energy in the avalanche and com m uta
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OCR Scan
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FT2955E/D
OT-223
318E-04
O-261AA
Marking 2955
MMFT2955ET1
MMFT2955E
2955 mosfet
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PDF
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2955V
Abstract: TD2955V
Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD2955V TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM P-Channel Enhancement-Mode Silicon vaaie
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MTD2955V/D
2955V
TD2955V
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PDF
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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PDF
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NT 2955 ON transistor
Abstract: Marking 2955 transistor k 4212 fet FT2955E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium P o w er Field E ffe c t T ran sisto r P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount M M FT2955E M o to ro la P re fe rre d D e v ic e TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM
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OT-223
FT2955E
NT 2955 ON transistor
Marking 2955
transistor k 4212 fet
FT2955E
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PDF
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2955v
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MTP2955V TMOS V Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0.200 OHM T M O S V is a n ew te c h n o lo g y d e sig n e d to a chie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lt th a t of sta n d a rd M O S FE Ts. This
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PDF
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2955V
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P ro d u c t Preview MTD2955V TMOS V Power Field Effect Transistor DPAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM TM O S V NjJSpj TM O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p rod u ct a bo u t o n e -h a lt th a t of sta n d a rd M O S FE Ts. This
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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