MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN TRANSISTOR DESCRIPTION The UTC MN2510 is an NPN transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.
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MN2510
MN2510
MN2510L-x-T3P-T
MN2510G-x-T3P-T
QW-R214-020
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
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Abstract: No abstract text available
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3441 3 AMPERES NPN SILICON POWER TRANSISTOR NPN SILICON POWER TRANSISTOR . . . 2N3441 transistor is designed for use in general-purpose switching
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2N3441
2N3441
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diagram LG LCD TV circuits
Abstract: schematic LG TV lcd backlight inverter schematic LG lcd backlight inverter schematic diagram inverter 12v to 24v 30a lg lcd tv POWER SUPPLY SCHEMATIC lg led tv internal parts block diagram diagram power supply LG 32 in LCD TV circuits KIA78033F regulator KIA78 ic philips lcd tv inverter schematic
Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For LCD TV / Monitor http://www.keccorp.com Sales Engineering G 2006. 04. REV 3.31 First & Best KEC Products Line up for LCD TV & MNT IC’s Discrete Transistor G/P Transistor Power Regulator Management
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OD-523
OD-323
OD323-2-1
SC-76)
OD-123FL
OT-723
OT-23
OT-89
diagram LG LCD TV circuits
schematic LG TV lcd backlight inverter
schematic LG lcd backlight inverter
schematic diagram inverter 12v to 24v 30a
lg lcd tv POWER SUPPLY SCHEMATIC
lg led tv internal parts block diagram
diagram power supply LG 32 in LCD TV circuits
KIA78033F
regulator KIA78 ic
philips lcd tv inverter schematic
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sc08820
Abstract: BUX10
Text: rrz SGS-THOMSON mneB@BiLgimrBB H8ie8_ ^7# BUX10 HIGH POWER NPN SILICON TRANSISTOR . . • . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS . MOTOR CONTROL . LINEAR AND SWITCHING INDUSTRIAL
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BUX10
BUX10
SC08820
10MHz
sc08820
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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KS524575
Abstract: No abstract text available
Text: mNBŒK KS524575 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 75 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in
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KS524575
Amperes/600
G00fl002
KS524575
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TC-3843
Abstract: tc3843 2SK735 3843
Text: NEC mN-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK735 The 2SK735 is N-channel MOS Field Effect Power Transistor PACKAGE DIM ENSIONS designed for switching power supplies, D C -D C converters. FEATURES in m illim eters inches
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2SK735
1987M
TC-3843
tc3843
3843
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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transistor ITT
Abstract: No abstract text available
Text: January 1990 Edition 1.1 FUJITSU PRO DUCT P R O FILE 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2428 is a silicon NPN general purpose, high power switching transistor fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T
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2SC2428
transistor ITT
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Untitled
Abstract: No abstract text available
Text: mn JAN, JANTX, JANTXV 4N22U, 4N23U, 4N24U OPTOCOUPLERS o p to e le c tr o n ic p r o ; s division AVAILABLE THROUGH DISTRIBUTION FEATURES: • Base lead provided for conventional transistor biasing • Overall current gain.1.5 typical 4N24U • High gain, high voltage transistor
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4N22U,
4N23U,
4N24U
4N24U)
4N24U
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2SC4867
Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE
Text: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in
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ENN6117
FH201
2SC4871)
2SC4867)
FH20I
2SC4871
2SC4867,
FH201]
7117D7L
0D544b7
2SC4867
16T MARKING
FH201
ZS21
TA-1315
1hz OUTPUT
7CJE
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Untitled
Abstract: No abstract text available
Text: fcT I ISI E G 2SC D • Ö235b05 G0G4352 T NPN Silicon Planar Transistor BD 424 T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets
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235b05
G0G4352
Q62702-D1068
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2538 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 5 3 8 is a silico n N P N epitaxial planar type transistor designed Dim ensions in mn 0 5 .1 M AX fo r R F a m plifiers on V H F band m obile radio applications.
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2SC2538
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Untitled
Abstract: No abstract text available
Text: High Speed Transistor Couplers Single/Dual Channel 8 Pin DIP Part M ih* m •m /im *. rM R im <52. 9 ImA 6N135 6N136 ICPL4502 Single channel Transistor Output 7 High C.M.R. 1 kv/tis. min 19 ICPL2533 Dual Channel Transistor Output «» F tm ■HT» f W M ilM M t a iilii .
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6N135
6N136
ICPL4502
ICPL2530
ICPL2531
ICPL2533
6N137
ICPL2601
ICPL2611
ICPL2630
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SD 1062 transistor
Abstract: TRANSISTOR b100 D 1062 transistor
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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BUK7840-55
OT223
OT223.
SD 1062 transistor
TRANSISTOR b100
D 1062 transistor
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SV180
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.
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BUK9614-30
SV180
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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BUK9620-55
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BUX100
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.
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BUX100
711DfiÂ
711005b
BUX100
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buk555-60a
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK555-60A/B
BUK555
T0220Aon-state
BUK555-60A/B
buk555-60a
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transistor AHs
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology
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BUK9608-55
transistor AHs
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Automotive applications, Switched
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BUK555-60H
T0220AB
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