Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.01 • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available
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IRF330
2N6760
O-204AA)
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFET IRFN5210 • Low RDS on Power MOSFET Transistor, Fully Avalanche Rated • Hermetic Ceramic Surface Mount package • Designed For Fast Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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IRFN5210
-100V
-120A
780ms)
O-276AB)
IRF5210SMD
IRF5210SMD
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mosfet IRF240
Abstract: mosfet to3 IRF240 LE17 power MOSFET IRF240
Text: N-CHANNEL POWER MOSFET IRF240 • Low RDS on MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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IRF240
O-204AE)
mosfet IRF240
mosfet to3
IRF240
LE17
power MOSFET IRF240
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uc 5587
Abstract: IRFN5210 LE17
Text: P-CHANNEL POWER MOSFET IRFN5210 • Low RDS on Power MOSFET Transistor, Fully Avalanche Rated • Hermetic Ceramic Surface Mount package • Designed For Fast Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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Original
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IRFN5210
-100V
-120A
780mJ
O-276AB)
IRF5210SMD
IRF5210SMD
uc 5587
IRFN5210
LE17
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PDF
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET IRFM540 • Low RDS on MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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IRFM540
O-254AA
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET IRFM360 • Low RDS on MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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IRFM360
O-254AA
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PDF
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mosfet to3
Abstract: irf33 2N6760 IRF330 LE17
Text: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.0Ω • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available
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Original
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IRF330
2N6760
O-204AA)
mosfet to3
irf33
2N6760
LE17
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PDF
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IRFM540
Abstract: 50Vdi 72 diode LE17
Text: N-CHANNEL POWER MOSFET IRFM540 • Low RDS on MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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IRFM540
O-254AA
IRFM540
50Vdi
72 diode
LE17
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PDF
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transistor 9527
Abstract: 9527 irfy330 tr 9527
Text: N-CHANNEL POWER MOSFET IRFY330 • BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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IRFY330
O-257AB
O220M
O-257AB)
transistor 9527
9527
irfy330
tr 9527
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PDF
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET IRF240 • Low RDS on MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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IRF240
O-204AE)
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PDF
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET IRFY330 • BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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IRFY330
O-257AB
O220M
O-257AB)
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PDF
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IRFD9110
Abstract: TA17541
Text: IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET Features • 0.7A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFD9110
IRFD9110
TA17541
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PDF
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application IRFP450
Abstract: datasheet irfp450 mosfet IRFP450 TA17435 TB334 IRFP45
Text: IRFP450 Data Sheet January 2002 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features • 14A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP450
TA17435.
application IRFP450
datasheet irfp450 mosfet
IRFP450
TA17435
TB334
IRFP45
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PDF
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MOSFET 400V TO-220
Abstract: transistor IRF730 400v 5a mosfet IRF73 TRANSISTOR mosfet 400V switching transistor Diode 400V 5A maximum idss transistor mosfet MOSFET 400V
Text: INCHANGE MOSFET IRF730 N-channel mosfet transistor Features ・With TO-220 package ・Simple drive requirements ・Fast switching ・VDSS=400V; RDS ON ≤1.0Ω;ID=5.5A ・1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER
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Original
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IRF730
O-220
O-220
MOSFET 400V TO-220
transistor IRF730
400v 5a mosfet
IRF73
TRANSISTOR mosfet
400V switching transistor
Diode 400V 5A
maximum idss transistor
mosfet
MOSFET 400V
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IRFF110
Abstract: TA17441 TB334
Text: IRFF110 Data Sheet January 2002 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features • 3.5A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF110
IRFF110
TA17441
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP150 Semiconductor Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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OCR Scan
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IRFP150
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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OCR Scan
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IRF740
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF610 Semiconductor Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF610
1-500i2
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PDF
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TA17444
Abstract: No abstract text available
Text: IRF710 Semiconductor Data Sheet June 1999 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF710
O-220AB
TA17444
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFBC40 Semiconductor Data Sheet July 1999 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFBC40
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF720 Semiconductor July 1999 Data Sheet 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF720
1-800i2
RF720
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9510 Semiconductor Data Sheet April 1999 -3.0A, -100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancem ent mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of
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OCR Scan
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IRF9510
-100V,
O-220AB
-100V
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF820 Semiconductor July 1999 Data Sheet 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF820
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP240 Semiconductor Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP240
O-247
180i2
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PDF
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