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    TRANSISTOR MOSFET IRF540 Search Results

    TRANSISTOR MOSFET IRF540 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MOSFET IRF540 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF540 motorola

    Abstract: irf540 for pwm IRF540 application irf540 "27 MHz" IRF540 u c transistor irf540 27 MHz mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA Order this document by IRF540/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF540 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 27 AMPERES 100 VOLTS RDS on = 0.070 OHMS This advanced TMOS power FET is designed to withstand high


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    PDF IRF540/D IRF540 IRF540 motorola irf540 for pwm IRF540 application irf540 "27 MHz" IRF540 u c transistor irf540 27 MHz mosfet transistor 400 volts.100 amperes

    irf540 for pwm

    Abstract: IRF540 T1 IRF540 TMOS Power FET irf540 27 MHz IRF540 application irf540d motorola 304 TRANSISTOR mosfet IRF540
    Text: MOTOROLA Order this document by IRF540/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF540 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 27 AMPERES 100 VOLTS RDS on = 0.077 OHMS This advanced TMOS power FET is designed to withstand high


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    PDF IRF540/D IRF540 irf540 for pwm IRF540 T1 IRF540 TMOS Power FET irf540 27 MHz IRF540 application irf540d motorola 304 TRANSISTOR mosfet IRF540

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


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    PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    IRF540NS

    Abstract: 1423C 15-V BZX84C7V5 SMAJ60A SR-332 TPS2490 AN75-16 IRF1324 SLVC033
    Text: Application Report SLVA379 – December 2009 Selecting Transistors for Hot-Swap Applications John Stevens . Linear Power ABSTRACT In hot-swap circuits, series-limiting devices such as MOSFETs are used to control start-up inrush and fault


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    PDF SLVA379 IRF540NS 1423C 15-V BZX84C7V5 SMAJ60A SR-332 TPS2490 AN75-16 IRF1324 SLVC033

    mosfet irf3710

    Abstract: IRF3710 GA49 irf3710 1A LTC4354IS8 LTC4354 LTC4354CDDB LTC4354CS8 LTC4354IDDB MBR10100
    Text: LTC4354 Negative Voltage Diode-OR Controller and Monitor U FEATURES DESCRIPTIO • The LTC 4354 is a negative voltage diode-OR controller that drives two external N-channel MOSFETs. It replaces two Schottky diodes and the associated heatsink, saving power and area. The power dissipation is greatly reduced


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    PDF LTC4354 LTC4253 LT4351 LTC4412 4354f mosfet irf3710 IRF3710 GA49 irf3710 1A LTC4354IS8 LTC4354 LTC4354CDDB LTC4354CS8 LTC4354IDDB MBR10100

    Zener Diode 10.5V, 0.5W

    Abstract: No abstract text available
    Text: LTC4354 Negative Voltage Diode-OR Controller and Monitor U FEATURES DESCRIPTIO • The LTC 4354 is a negative voltage diode-OR controller that drives two external N-channel MOSFETs. It replaces two Schottky diodes and the associated heatsink, saving power and area. The power dissipation is greatly reduced


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    PDF LTC4354 sn4354 4354fs Zener Diode 10.5V, 0.5W

    Untitled

    Abstract: No abstract text available
    Text: LTC4354 Negative Voltage Diode-OR Controller and Monitor DESCRIPTION FEATURES n n n n n n n n n Controls N-Channel MOSFETs Replaces Power Schottky Diodes Less Than 1µs Turn-off Time Limits Peak Fault Current 80V Operation Smooth Switchover without Oscillation


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    PDF LTC4354 MS8/MS10 LTC4253 LT4351 LTC4412 4354fc

    Si4466DY

    Abstract: mosfet irf3710
    Text: LTC4354 Negative Voltage Diode-OR Controller and Monitor Description Features Controls N-Channel MOSFETs n Replaces Power Schottky Diodes n Less Than 1µs Turn-off Time Limits Peak Fault Current n 80V Operation n Smooth Switchover without Oscillation n No Reverse DC Current


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    PDF LTC4354 LT4250 LTC4251/LTC4251-1/ LTC4251-1 LTC4252-1/LTC4252-2/ LTC4252-1A/LTC4252-2A LTC4253 LT4351 LTC4412 4354fc Si4466DY mosfet irf3710

    negative voltage regulator, 48V

    Abstract: IRF3710 LTC4354 LTC4354CDDB LTC4354CS8 LTC4354IDDB LTC4354IS8 MBR10100 irf3710 1A marking GB SOT 23
    Text: LTC4354 Negative Voltage Diode-OR Controller and Monitor U FEATURES DESCRIPTIO • The LTC 4354 is a negative voltage diode-OR controller that drives two external N-channel MOSFETs. It replaces two Schottky diodes and the associated heatsink, saving power and area. The power dissipation is greatly reduced


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    PDF LTC4354 LTC4253 LT4351 LTC4412 4354fa negative voltage regulator, 48V IRF3710 LTC4354 LTC4354CDDB LTC4354CS8 LTC4354IDDB LTC4354IS8 MBR10100 irf3710 1A marking GB SOT 23

    IRF3710

    Abstract: IRF3710 MOSFET mosfet irf3710 3F smd transistor LTC4354 LTC4354CDDB LTC4354CS8 LTC4354IDDB LTC4354IS8 MBR10100
    Text: LTC4354 Negative Voltage Diode-OR Controller and Monitor U FEATURES DESCRIPTIO • The LTC 4354 is a negative voltage diode-OR controller that drives two external N-channel MOSFETs. It replaces two Schottky diodes and the associated heatsink, saving power and area. The power dissipation is greatly reduced


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    PDF LTC4354 LTC4253 LT4351 LTC4412 4354fb IRF3710 IRF3710 MOSFET mosfet irf3710 3F smd transistor LTC4354 LTC4354CDDB LTC4354CS8 LTC4354IDDB LTC4354IS8 MBR10100

    IRF3710

    Abstract: mosfet irf3710 IRF54 Parallel operation mosfet IRF3710S IRF540NS IRFS4710 LTC4354 MBR10100 Si4466DY
    Text: DESIGN FEATURES Replace –48V ORing Diodes with FETs to Reduce Heat and Save Space by James Herr Introduction 5 DIODE MBR10100 4 3 POWER SAVED 2 1 FET (IRFS4710) 2 4 6 CURRENT (A) 8 10 Figure 1. FET-based diode circuit saves power through an external current limiting


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    PDF MBR10100) IRFS4710) LTC4354 IRF3710S LTC4259s LTC2439-1s LTC4354 IRF3710 mosfet irf3710 IRF54 Parallel operation mosfet IRF3710S IRF540NS IRFS4710 MBR10100 Si4466DY

    IRF540 n-channel MOSFET

    Abstract: No abstract text available
    Text: MIC5022 Micrel MIC5022 Half-Bridge MOSFET Driver General Description Features The MIC5022 half-bridge MOSFET driver is designed to operate at frequencies up to 100kHz 5kHz PWM for 2% to 100% duty cycle and is an ideal choice for high speed applications such as motor control and SMPS (switch mode


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    PDF MIC5022 MIC5022 100kHz 2000pF MIC38C43 2200pF IRF540 n-channel MOSFET

    smps control ic With MOSFET Driver

    Abstract: MOSFET IRF540 CURRENT LIMITING LOW SIDE DRIVER make full-bridge SMPS half bridge smps controller high side current mirror sensing TL 188 TRANSISTOR PIN DIAGRAM 1x100 full bridge mosfet smps IRF540 application
    Text: MIC5022 Micrel MIC5022 Half-Bridge MOSFET Driver General Description Features The MIC5022 half-bridge MOSFET driver is designed to operate at frequencies up to 100kHz 5kHz PWM for 2% to 100% duty cycle and is an ideal choice for high speed applications such as motor control and SMPS (switch mode


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    PDF MIC5022 MIC5022 100kHz 2000pF MIC38C43 2200pF smps control ic With MOSFET Driver MOSFET IRF540 CURRENT LIMITING LOW SIDE DRIVER make full-bridge SMPS half bridge smps controller high side current mirror sensing TL 188 TRANSISTOR PIN DIAGRAM 1x100 full bridge mosfet smps IRF540 application

    IRF540

    Abstract: MIC38C43 MIC5020 MIC5021 MIC5022 MIC5022AJB MIC5022BN MIC5022BWM SMP06N06-14
    Text: MIC5022 Micrel MIC5022 Half-Bridge MOSFET Driver General Description Features The MIC5022 half-bridge MOSFET driver is designed to operate at frequencies up to 100kHz 5kHz PWM for 2% to 100% duty cycle and is an ideal choice for high speed applications such as motor control and SMPS (switch mode


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    PDF MIC5022 MIC5022 100kHz 2000pF MIC38C43 2200pF IRF540 MIC38C43 MIC5020 MIC5021 MIC5022AJB MIC5022BN MIC5022BWM SMP06N06-14

    IRF540 n-channel MOSFET BATTERY CHARGER

    Abstract: 1rf530 IRF540 irf520 comparison UNITRODE applications handbook UNITRODE product and applications handbook H. Dean Venable schematic diagram 72vdc battery charger 48V to 12V buck transformer RF520 HEXFET Power MOSFET designer manual
    Text: UNITRODE CORPORATION U-167 UC3578 TELECOM BUCK CONVERTER EVALUATION BOARD By Mark Dennis Unitrode Corporation ABSTRACT This application note describes a simple solution for a buck converter operating from an input of 15V to 72V with an N channel MOSFET switching transistor. Using this switch configuration requires a gate potential higher than the input


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    PDF U-167 UC3578 UC3S78 48Vions Q1/95 IRF540 n-channel MOSFET BATTERY CHARGER 1rf530 IRF540 irf520 comparison UNITRODE applications handbook UNITRODE product and applications handbook H. Dean Venable schematic diagram 72vdc battery charger 48V to 12V buck transformer RF520 HEXFET Power MOSFET designer manual

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


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    PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    transistor dk qq

    Abstract: IRF540 motorola
    Text: MOTOROLA O rder this docum ent by IRF540/D SEMICONDUCTOR TECHNICAL DATA Product Preview IR F540 TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy


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    PDF IRF540/D transistor dk qq IRF540 motorola

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


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    PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    transistor equivalent irf510

    Abstract: 966a transistor equivalent irf740 irf460a HEXFET III - A new Generation of Power MOSFETs fet irf840 transistor equivalent irf520 IRF83Q AN949A High frequency switching AN-966A
    Text: APPLICATION NOTE 966A HEXFET III: A New Generation of Power MOSFETs H EXFET is a tra d e m a rk o f In te rn a tio n a l R ectifie r by D. Grant Introduction International Rectifier has introduc­ ed a new third-generation of HEXFET power MOSFETs, the HEXFET III.


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    BUZ71A equivalent

    Abstract: IRL734 IRF540 MAX643XCSA how to stepup 1.5v to 5v, 12v TRANSISTOR+642
    Text: y i/ iy j x iy i/ i F ix e d O u tp u t 10W CM O S Step-U p S w itc h in g R eg u lato rs _ F eatu res The MAX641/MAX642/MAX643 step-up switching regu­ lators are designed for minimum component DC-DC converter circuits in the 5mW to 10W range.


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    PDF MAX641/MAX642/MAX643 MAX641/642/643 BUZ71A equivalent IRL734 IRF540 MAX643XCSA how to stepup 1.5v to 5v, 12v TRANSISTOR+642

    IRL734

    Abstract: 1RF620 IRZ14 Diode c 642
    Text: y i/iy jx iy i/i F ix e d O utput 10W CMOS S tep-U p S w itch in g R egulators _ F eatures The MAX641/MAX642/MAX643 step-up switching regu­ lators are designed for minimum component DC-DC converter circuits in the 5mW to 10W range. ♦ Fixed +5V, +12V, +15V Output Voltages


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    PDF MAX641/MAX642/MAX643 MAX641/642/643 MAX643XCPA MAX643XCSA MAX643XC/D MAX643XEPA MAX643XESA MAX643XEJA MAX643XMJA IRL734 1RF620 IRZ14 Diode c 642

    irf740 switching 3 phase motor driver

    Abstract: IRF510 SEC mosfet h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF540 complementary transistor IRF740 VDMOS reliability testing report transistor equivalent irf740 IRF640 mosfet snubber circuit for mosfet push pull
    Text: MQSFET RUGGEDNESS Application Note DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION This application note discusses why and how MOSFET devices fail in switch-mode applications. It deals with the issue of ruggedness in the design of the device, and with system design strategies that can


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    JRF620

    Abstract: irl734 mosfet irf640 dc to dc converter Caddell-Burns IRZ14 analog IRF513 dc-dc converter 12v to 5v 3a BUZ21 L equivalent BUZ71A equivalent MTP12N10L
    Text: y v i y j x i y n F ixe d O utput 10W CMOS S tep-U p S w itc h in g R egulators _ ♦ Fixed +5V, +12V, +15V Output Voltages Low-power applications require only an output filter ca­ pacitor and a small, low-cost inductor. An additional


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    PDF MAX641 /MAX642/MAX643 MAX641/642/643 MAX643XCPA MAX643XCSA MAX643XC/D MAX643XEPA MAX643XESA MAX643XEJA MAX643XMJA JRF620 irl734 mosfet irf640 dc to dc converter Caddell-Burns IRZ14 analog IRF513 dc-dc converter 12v to 5v 3a BUZ21 L equivalent BUZ71A equivalent MTP12N10L

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


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    PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r