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    TRANSISTOR MOSFET N-CH 30V Search Results

    TRANSISTOR MOSFET N-CH 30V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    N0301P-T1-AT Renesas Electronics Corporation Pch Single Power Mosfet -30V -4.0A 75Mohm Sot-23F Visit Renesas Electronics Corporation
    N0301N-T1-AT Renesas Electronics Corporation Nch Single Power Mosfet 30V 4.5A 36Mohm Sot-23F Visit Renesas Electronics Corporation
    N0302P-T1-AT Renesas Electronics Corporation Pch Single Power Mosfet -30V -4.4A 54Mohm Sot-23F Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    HAT1048R-EL-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -16A 7Mohm Sop8 Visit Renesas Electronics Corporation

    TRANSISTOR MOSFET N-CH 30V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sop8901

    Abstract: No abstract text available
    Text: SOP8901 Ordering number : ENN8199 SOP8901 PNP Epitaxial Planar Silicon Transistor N-Channel Silicon MOSFET Motor Bridge Circuit Applications Features • Composite type with a PNP transistor and an N-ch Sillicon MOSFET contained in one package facilitating highdensity mounting.


    Original     		PDF OP8901 ENN8199 sop8901

    MCH6935

    Abstract: No abstract text available
    Text: MCH6935 Ordering number : ENN8039 MCH6935 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6935 ENN8039 MCH6935

    pdf datasheet of ic 8038

    Abstract: ic 8038 ic 8038 APPLICATIONS MCH6933
    Text: MCH6933 Ordering number : ENN8038 MCH6933 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6933 ENN8038 pdf datasheet of ic 8038 ic 8038 ic 8038 APPLICATIONS MCH6933

    MCH6931

    Abstract: No abstract text available
    Text: MCH6931 Ordering number : ENN8037 MCH6931 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6931 ENN8037 MCH6931

    MCH6937

    Abstract: No abstract text available
    Text: MCH6937 Ordering number : ENN8040 MCH6937 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6937 ENN8040 MCH6937

    MCH6937

    Abstract: No abstract text available
    Text: MCH6937 Ordering number : EN8040A SANYO Semiconductors DATA SHEET MCH6937 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6937 EN8040A MCH6937

    EN803

    Abstract: EN8039A MCH6935
    Text: MCH6935 Ordering number : EN8039A SANYO Semiconductors DATA SHEET MCH6935 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6935 EN8039A EN803 EN8039A MCH6935

    VEC2901

    Abstract: No abstract text available
    Text: VEC2901 Ordering number : ENN8198 VEC2901 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications Features • • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.


    Original     		PDF VEC2901 ENN8198 VEC2901

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP9972 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UP9972 is an N-ch enhancement mode Power MOS Field Effect Transistor using advanced technology to provide fast speed switching, low on-resistance and perfect cost-effectiveness.


    Original     		PDF UP9972 UP9972 UP9972L-TN3-R UP9972G-TN3-R UP9972L-TN3-T UP9972G-TN3-T UP9972L-TA3-T UP9972G-TA3-T 2012at

    UP9972

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP9972 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UP9972 is an N-ch enhancement mode Power MOS Field Effect Transistor using advanced technology to provide fast speed switching, low on-resistance and perfect cost-effectiveness.


    Original     		PDF UP9972 UP9972 UP9972L-TA3-T UP9972G-TA3-T QW-R502-372

    SMS6001

    Abstract: MosFET
    Text: SMS6001 440mA, 60V, RDS ON 2Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS SOT-23 The SMS6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and


    Original     		PDF SMS6001 440mA, OT-23 SMS6001 27-Jan-2014 MosFET

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UM6K31N Preliminary Power MOSFET SI LI CON N -CH AN N EL M OSFET T RAN SI ST OR 5 4 ̈ 6 DESCRI PT I ON The UTC UM6K31N is a silicon N-channel MOS Field Effect Transistor. It can be used in switching applications. ̈ ̈ 3 SOT-363


    Original     		PDF UM6K31N UM6K31N OT-363 UM6K31NL-AL6-R UM6K31NG-AL6-R QW-R502-503

    Untitled

    Abstract: No abstract text available
    Text: コンプリメンタリーパワー MOSFET ELM34605AA-N •概要 ■特長 ELM34605AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。


    Original     		PDF ELM34605AA-N -55Id P3503QVG OCT-08-2004

    Untitled

    Abstract: No abstract text available
    Text: コンプリメンタリーパワー MOSFET ELM34601AA-N •概要 ■特長 ELM34601AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。


    Original     		PDF ELM34601AA-N P2103NVG MAY-21-2004

    Untitled

    Abstract: No abstract text available
    Text: コンプリメンタリーパワー MOSFET ELM34603AA-N •概要 ■特長 ELM34603AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V 性を備えた大電流 MOSFET です。 ・ Id=7A


    Original     		PDF ELM34603AA-N P2803NVG JUL-25-2005

    Untitled

    Abstract: No abstract text available
    Text: コンプリメンタリーパワー MOSFET ELM34608AA-N •概要 ■特長 ELM34608AA－N は 低 入 力 容 N チャンネル P チャンネル 量 低電圧駆動、 低オン抵抗とい ・ Vds=60V う特性を備えた大電流 MOSFET ・ Id=4.5A


    Original     		PDF ELM34608AA-N ELM34608AAï P5806NVG Oct-01-2004

    Untitled

    Abstract: No abstract text available
    Text: コンプリメンタリーパワー MOSFET ELM34604AA-N •概要 ■特長 ELM34604AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=7A


    Original     		PDF ELM34604AA-N P2804NVG AUG-19-2004

    Untitled

    Abstract: No abstract text available
    Text: コンプリメンタリーパワー MOSFET ELM35603KA-S •概要 ■特長 ELM35603KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=10A


    Original     		PDF ELM35603KA-S P2204ND5G O-252-5 May-03-2006

    N mosfet 400v 100A

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD BYC10-600 Preliminary DIODE U LT RAFAST , LOW SWI T CH I N G LOSS RECT I FI ER DI ODE ̈ DESCRI PT I ON The UTC BYC10-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated


    Original     		PDF BYC10-600 BYC10-600 BYC10L-60at QW-R601-023 N mosfet 400v 100A

    Untitled

    Abstract: No abstract text available
    Text: コンプリメンタリーパワー MOSFET ELM35601KA-S •概要 ■特長 ELM35601KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=7A


    Original     		PDF ELM35601KA-S P2804ND5G O-252-5 SEP-16-2005

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UPS703 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS703 is designed for several special enhancements to satisfy the demands, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,


    Original     		PDF UPS703 UPS703 QW-R119-015

    Untitled

    Abstract: No abstract text available
    Text: STD17NE03L N - CHANNEL 30V - 0.034£2 - 17A - DPAK _ STripFET " POWER MOSFET PRELIMINARY DATA TYPE S TD 17N E 03L . . . . . . V dss R dS oii Id 30 V < 0.05 Q. 17 A TYPICAL RDs(on) = 0.034 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 °C


    OCR Scan     		PDF STD17NE03L O-252 0068772-B

    Untitled

    Abstract: No abstract text available
    Text: STB60NE03L-12 N - CHANNEL 30V - 0.009 i ì - 60A - D^PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S TB60N E03L-1 2 30 V < 0.012 a 60 A • . . . . . . . TYPICAL RDS(on) = 0.009 AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF STB60NE03L-12 TB60N E03L-1 STB60NE3L1-16 O-263

    transistor DI 468 circuit diagram application

    Abstract: SC06140 *P80NE STP80NE03L-06 *80ne03 24v mosfet for audio 5.1 circuit transistor vds rds 12 id 80a to220
    Text: STP80NE03L-06 N - CHANNEL 30V - 0.005ft - 80A - TO-220 STripFET POWER MOSFET TYPE S TP 80N E 03L-06 • . . . . V R d ss 30 V d Id S o ii < 0.006 Q. 80 A TYPICAL R D S (on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 °C


    OCR Scan     		PDF STP80NE03L-06 005ft O-220 STP80NE03L-06 transistor DI 468 circuit diagram application SC06140 *P80NE *80ne03 24v mosfet for audio 5.1 circuit transistor vds rds 12 id 80a to220