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    TRANSISTOR MOSFET N-CH DRAIN CURRENT Search Results

    TRANSISTOR MOSFET N-CH DRAIN CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MOSFET N-CH DRAIN CURRENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UTN3055 Power MOSFET 1 2 A, 2 5 V N -CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTC UTN3055 is N-channel logic level enhancement mode field effect transistor. ̈ SY M BOL 2.Drain 1.Gate 3.Source ̈ ORDERI N G I N FORM AT I ON


    Original     		PDF UTN3055 UTN3055 UTN3055L-TN3-R UTN3055G-TN3-R UTN3055L-TN3-T UTN3055G-TN3-T O-252 QW-R502-138

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UT3055 Power MOSFET 1 2 A, 2 5 V N -CH AN N EL POWER M OSFET ̈ 1 DESCRI PT I ON TO-252 The UTC UT3055 is N-Channel logic level enhancement mode field effect transistor. ̈ SY M BOL 2.Drain 1 TO-251 1.Gate 3.Source ̈ ORDERI N G I N FORM AT I ON


    Original     		PDF UT3055 O-252 UT3055 O-251 UT3055-TM3-T UT3055L-TM3-T UT3055-TN3-R UT3055L-TN3-R UT3055-TN3-T UT3055L-TN3-T

    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet
    Text: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


    Original     		PDF

    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT with i-v characteristics BJT Gate Drive circuit BJT with V-I characteristics TRANSISTORS BJT with low gate voltage Low Capacitance bjt
    Text: Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


    Original     		PDF

    AN569

    Abstract: MTDF1C02HD SMD310
    Text: MOTOROLA Order this document by MTDF1C02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTDF1C02HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs


    Original     		PDF MTDF1C02HD/D MTDF1C02HD AN569 MTDF1C02HD SMD310

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UPS3652 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH  DESCRI PT I ON The UTC UPS3652 is an integrated PWM controller and PowerMOSFET specifically designed for switching operation with minimal external components. The UTC UPS3652 is designed to


    Original     		PDF UPS3652 UPS3652 QW-R119-021

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: TRANSISTOR mos canal p HMA20 All in one TRANSISTOR REPLACEMENT GUIDE 4SR44 transistors mos mosfet canal p PX28 SK17 p channel de mosfet
    Text: MOSFET Analyser Model: HMA20 Operation E G AT RCE SO U AIN DR N EL HAN L N C ANNE P CH The HMA20 is an advanced Microcontrolled instrument that will quickly and easily analyse almost any enhancement mode MOSFET. With a press of the button, the Analyser will:


    Original     		PDF HMA20 HMA20 80x56x25mm TRANSISTOR REPLACEMENT GUIDE TRANSISTOR mos canal p All in one TRANSISTOR REPLACEMENT GUIDE 4SR44 transistors mos mosfet canal p PX28 SK17 p channel de mosfet

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UPS602 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS602 is designed to provide several special enhancements to satisfy the needs, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,


    Original     		PDF UPS602 UPS602 68KHz) QW-R119-005

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UPS704 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS704 is designed to provide several special enhancements to satisfy the needs, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,


    Original     		PDF UPS704 UPS704 68KHz) QW-R119-011

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UPS603 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS603 is designed for several special enhancements to satisfy the demands, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,


    Original     		PDF UPS603 UPS603 QW-R119-014

    UU105 transformer

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UPS604 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS604 is designed to provide several special enhancements to satisfy the needs, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,


    Original     		PDF UPS604 UPS604 68KHz) QW-R119-006 UU105 transformer

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UPS703 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS703 is designed for several special enhancements to satisfy the demands, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,


    Original     		PDF UPS703 UPS703 QW-R119-015

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UPS601 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH ̈ DESCRI PT I ON The UTC UPS601 is designed to provide several special enhancements to satisfy the needs, for example, Power-Saving mode for low standby power <0.3W , Frequency Hopping ,


    Original     		PDF UPS601 UPS601 68kHz)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M LD2N06CL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet SMARTDISCRETES ™ Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET The MLD2N06CL is designed for applications that require a rugged power switching


    OCR Scan     		PDF LD2N06CL/D MLD2N06CL MLD2N06CL/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M LP2N06CL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet SMARTDISCRETES ™ Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET The MLP2N06CL is designed for applications that require a rugged power switching


    OCR Scan     		PDF LP2N06CL/D MLP2N06CL MLP2N06CL/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rd e r th is d o c u m e n t b y M LP1N06C L/D SEMICONDUCTOR TECHNICAL DATA SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET These SM ARTD ISCR ETES devices feature current limiting for short circuit protection, an integral g a te -to -s o u rc e clamp for ESD protection and g a te -to -d ra in


    OCR Scan     		PDF LP1N06C MLP1N06CL/D

    Untitled

    Abstract: No abstract text available
    Text: 5.1 Power MOS-FET Letter symbol Symbol Explanation Symbol Explanation Ciss Input capacitance td on Turn on delay time Coss O utput capacitance tr Rise time Crss Feedback capacitance ton Turn on time Id Drain current td(off) Turn o ff delay time Idp Drain current (pulse)


    OCR Scan     		PDF

    an913 Motorola

    Abstract: AN913 TMOS POWER MOSFETs mosfet base inverter with chargers circuit MTM20N10 SN7407 CI sn74LS05 MTM8N10 TDT102 tl494 flyback MTM35N06
    Text: g AN-913 MOTOROLA Semiconductor Products Inc. Application Note DESIGNING WITH TMOS POWER MOSFETs Prepared by Kim Gauen Applications Engineer The advent of vertical current control in MOS Field Effect Transistors has brought their design advan ­ ta g e s , w e ll k n o w n to IC a n d S m a ll S ig n a l circu it


    OCR Scan     		PDF AN-913 AN913/D AN913/D an913 Motorola AN913 TMOS POWER MOSFETs mosfet base inverter with chargers circuit MTM20N10 SN7407 CI sn74LS05 MTM8N10 TDT102 tl494 flyback MTM35N06

    MTP30N08M

    Abstract: AN569 MC34129 sensefet high voltage current mirror mosfet current mirror 314B03
    Text: M O T O R O L A SC X S T R S / R F b 3 b 7 2 5 4 □ Ü ‘iô7ô4 ôTl • MOTb bflE » MOTOROLA SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor IM-Channel Enhancement-Mode Silico n Gate w ith Current Sensing Capability TM OS S E N S E F E T DEVICE


    OCR Scan     		PDF MC34129 MTP30N08M AN569 sensefet high voltage current mirror mosfet current mirror 314B03

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TP1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


    OCR Scan     		PDF TP1N60E/D TP1N60E MTP1N60E/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM O S V is a new le ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is lan ce area product a bo u t o n e -h a lf th a t of sta n d ard M O SFETs. T h is


    OCR Scan     		PDF 0E-05 0E-01

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without


    OCR Scan     		PDF MTP2N50E/D 21A-06

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TP2N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP2N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


    OCR Scan     		PDF TP2N60E/D TP2N60E 21A-06

    32n20

    Abstract: 32N20E
    Text: M O T O R O LA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTW32N20E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 32 AMPERES 200 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF 32N20E 32n20 32N20E