TRANSISTOR MPSA63 Search Results

TRANSISTOR MPSA63 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR MPSA63 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
KIA78pI Abstract: transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78pI transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P	PDF
khb9D5N20P Abstract: khb9d0n90n 6v Zener diode khb2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb9D5N20P khb9d0n90n 6v Zener diode khb2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
MPSA63 Abstract: Transistor MPSA63 Text: MPSA63 PNP SILICON DARLINGTON TRANSISTOR TO-92 MPSA63 is PNP silicon darlington transistor designed for preamplifier input applications. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VCES 30V Collector-Base Voltage VCBO 30V Emitter-Base Voltage VE BO	OCR Scan	MPSA63 MPSA63 300mA 625mW 100nA 100mA 300us, Transistor MPSA63	PDF
MPSA63 Abstract: MPSA64 Text: MPSA63 / 64 PNP Silicon Epitaxial Planar Transistor Darlington Transistor for high gain amplification 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage	Original	MPSA63 MPSA63 MPSA64 MPSA64	PDF
TRANSISTORS BJT bc548 Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302 Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002	Original	OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
MPSA63 Abstract: MPSA62 MPSA64 Text: SEMICONDUCTOR MPSA62/63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B C FEATURES A Complementary to MPSA13/14. DIM A B C D E F G H J K L M N N E K MPSA62 Voltage MPSA63/64 Collector-Emitter MPSA62	Original	MPSA62/63/64 MPSA13/14. MPSA62 MPSA63/64 MPSA63 MPSA62 MPSA64	PDF
MPSA63 Abstract: MPSA13 MPSA62 MPSA64 Text: SEMICONDUCTOR MPSA62/63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B C FEATURES A ᴌComplementary to MPSA13/14. DIM A B C D E F G H J K L M N N E K MAXIMUM RATING Ta=25ᴱ Voltage MPSA63/64 Collector-Emitter	Original	MPSA62/63/64 MPSA13/14. MPSA62 MPSA63/64 MPSA63 MPSA13 MPSA62 MPSA64	PDF
Untitled Abstract: No abstract text available Text: S A M SU N G SEMICONDUCTOR 1 4E INC D TTbMma OOGTBbT t> PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA63 T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c e s=3 0 V • Collector Dissipation: Pc (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	MPSA63 625mW MPSA62	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
transistor A62 Abstract: MPSA63 MPSA62 MPS-A63 MPSA64 Transistor MPSA63 Text: SEMICONDUCTOR TECHNICAL DATA MPSA62/63/64 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. FEATURES • Complementary to MPSA13/14. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT -20 C o lle c to r-B a se MPSA62	OCR Scan	MPSA62/63/64 MPSA13/14. MPSA62 MPSA63/64 A62/63/64 transistor A62 MPSA63 MPS-A63 MPSA64 Transistor MPSA63	PDF
"Darlington Transistor" Abstract: transistor mpsa64 CMPTA63 CMPTA64 CP707 CXTA64 CZTA64 MPSA63 MPSA64 Text: PROCESS CP707 Small Signal Transistor PNP - Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization	Original	CP707 CMPTA63 CMPTA64 CXTA64 CZTA64 MPSA63 MPSA64 435-hip "Darlington Transistor" transistor mpsa64 CMPTA63 CMPTA64 CP707 CXTA64 CZTA64 MPSA63 MPSA64	PDF

"Darlington Transistor" Abstract: CMPTA63 CMPTA64 CP707 CXTA64 CZTA64 MPSA63 MPSA64 Text: PROCESS CP707 Small Signal Transistor PNP - Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization	Original	CP707 CMPTA63 CMPTA64 CXTA64 CZTA64 MPSA63 MPSA64 22-March "Darlington Transistor" CMPTA63 CMPTA64 CP707 CXTA64 CZTA64 MPSA63 MPSA64	PDF
2929 transistor Abstract: MPSA25 mpsa82 MPSA26 MPSA45 MPSA55 MPSA62 MPSA63 I0204 625MW Text: SAMSUNG SEMICONDUCTOR INC MPSA26 14E O 00073SM I NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic	OCR Scan	00073SM MPSA26 T-29-29 625mW MPSA25 MPSA62 100/iA, 100mA, 2929 transistor mpsa82 MPSA45 MPSA55 MPSA63 I0204 625MW	PDF
CMPTA64 Abstract: CMPTA63 CP707 CXTA64 CZTA64 MPSA63 MPSA64 Text: PROCESS CP707 Central Small Signal Transistor TM Semiconductor Corp. PNP - Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS	Original	CP707 CMPTA63 CMPTA64 CXTA64 CZTA64 MPSA63 MPSA64 117TAXIAL CMPTA64 CMPTA63 CP707 CXTA64 CZTA64 MPSA63 MPSA64	PDF
mpsa63 Abstract: MPSA63.64 MPS-A62 HMPSA63 MPSA62 Text: SEMICONDUCTOR MPSA62/63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B C FEATURES A ・Complementary to MPSA13/14. DIM A B C D E F G H J K L M N N E K MAXIMUM RATING Ta=25℃ SYMBOL RATING Collector-Base	Original	MPSA62/63/64 MPSA13/14. MPSA62 MPSA63/64 MPSA62 MPSA63 MPSA64 MPSA63.64 MPS-A62 HMPSA63	PDF
Untitled Abstract: No abstract text available Text: FORWARD INTERNATIONAL ELECTRONICS LTD. DARUNGTON MPSA63 SEMICONDUCTOR " TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR TRANSISTORS * High Collector-Emitter Voltage Vces=-30V * Collector D issipation: Pc=625mW Ta=25C ABSOLUTE MAXIMUM RATINGS at Tamto=25°C	OCR Scan	MPSA63 625mW -10mA 100mA -100mA M00mA 100MHZ	PDF
2n3904 2n3906 Abstract: 2SC1815 2SA1015 2SC1815 2SA1015 Text: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64	OCR Scan	2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2n3904 2n3906 2SC1815 2SA1015 2SC1815 2SA1015	PDF
SA62 Abstract: MPSA63 equivalent MPS62 Text: TOSHIBA MPSA62,63,64 Transistor Unit in mm Silicon PNP Epitaxial Type M AX. Designed For Pre-Amplifier Input Application Features • High DC Current Gain @ lc = 10mA - hFE = 5000 Min. MPSA63 10000 (Min.) MPSA64 20000 (Min.) MPSA62 • Collector-Emitter Breakdown Voltage	OCR Scan	MPSA62 MPSA63 MPSA64 MPSA62 MPSA63, MPSA64 MPSA12, SA62 MPSA63 equivalent MPS62	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted	OCR Scan	MPSA63 MMBTA63 PZTA63 MPSA64 MPSA63 MMBTA63	PDF
MPSA63 Abstract: MPSA63 equivalent 100C100B mps-a63 C10AA MPSA62 mpsa64 Text: TOSHIBA TRANSISTOR MPSA62, 63, 64 SILICON PNP EPITAXIAL TYPE PCT PROCESS DESIGNED FOR PRE-AMPLIFIER INPUT APPLICATIONS REQUIRING HIGH INPUT IMPEDANCE. FEATURES : • High DC Current Gain I I C-10«A : hFE- 5000(Min.) MPSA63 10000(Min.) MPSA64 20000(Min.) MPSA62	OCR Scan	MPSA62, MPSA63 MPSA64 MPSA62 BVCES-30V C-100 MPSA63. MPSA64 MPSA63 equivalent 100C100B mps-a63 C10AA MPSA62	PDF
MPS62 Abstract: MPS63 Text: TOSHIBA MPS62 MPS63,64 Discrete Semiconductors Transistor Silicon PNP Epitaxial Type Designed For Pre-Amplifier Input Application F e a tu re s • High DC Current Gain @ lc = 10mA - hFE = 5000 Min. MPSA63 10000 (Min.) MPSA64 20000 (Min.) MPSA62 • Collector-Emitter Breakdown Voltage	OCR Scan	MPS62 MPS63 MPSA63 MPSA64 MPSA62 MPSA63, MPSA64 MPSA12,	PDF

TRANSISTOR MPSA63 Search Results

TRANSISTOR MPSA63 Result Highlights (5)

TRANSISTOR MPSA63 Datasheets Context Search

MN1280

KIA78*pI

khb*9D5N20P

oz960

MPSA63

MPSA63

TRANSISTORS BJT bc548

2sb504

MPSA63

MPSA63

Untitled

y51 h 120c

transistor A62

"Darlington Transistor"

"Darlington Transistor"

2929 transistor

CMPTA64

mpsa63

Untitled

2n3904 2n3906

SA62

Untitled

MPSA63

MPS62