AQS210PS
Abstract: AQV214E Application transistor aqy sensor matsushita aqv214 AQS210T2S AQS210TS AQV251 AQS821HS AQV210S AQW210S
Text: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of
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I-37012
CH-6343
ACG-C0274-E-1
AQS210PS
AQV214E Application
transistor aqy
sensor matsushita aqv214
AQS210T2S
AQS210TS
AQV251
AQS821HS
AQV210S
AQW210S
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210EH
Abstract: OPTOCOUPLER 4-PIN application note 214EH "Base Station Controller" matsushita electrical conduit AQV 614 OPTOCOUPLER 4-PIN 210EH datasheet AQV212S 4pin 4PIN optocoupler
Text: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of
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BSN20
Abstract: HZG303
Text: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.
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BSN20
BSN20
03ab44
HZG303
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Untitled
Abstract: No abstract text available
Text: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Functional Schematic Features • Rev. V2 GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications
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MAGX-000035-09000P
14-Lead
MAGX-000035-09000P
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IN5343
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics
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MRF166W/D
IN5343
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8085 transistor
Abstract: No abstract text available
Text: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)
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AQS210PS)
16-pin
083inch
8085 transistor
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AQS210PS
Abstract: AQS210PSX AQS210PSZ IC 8085 pin
Text: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)
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AQS210PS)
16-pin
083inch
AQS210PS
AQS210PSX
AQS210PSZ
IC 8085 pin
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BUK95180-100A
Abstract: BUK96180-100A
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features
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O220AB
OT404
BUK95180-100A
BUK96180-100A
O220AB
OT40otation
BUK95180-100A
BUK96180-100A
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transistor bf 196
Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B
Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,
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IK1509
Abstract: 12v switching transistor regulator 0-12 v voltage regulator 12v 2a
Text: TECHNICAL DATA Switching Voltage Regulators IK1509-xx Features • • • • • • • • • • • 3.3V, 5V, 12V, and adjustable output versions Adjustable version output voltage range, 1.23V to 18V ± 3% max over line and load conditions Guaranteed 2A output load current
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IK1509-xx
150kHz
IK1509
012AA)
IK1509
12v switching transistor
regulator 0-12 v
voltage regulator 12v 2a
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.
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MRF166W/D
MRF166W
MRF166W/D
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Untitled
Abstract: No abstract text available
Text: •ISOCOfl C O H P O N E N T S LTD 7SC D 4flSb510 0Q0D17M C N Y 1 7 - 1 , DTT ISO C N Y 1 7 - 2 , 7^ V/~ $ 3 C N Y 1 7 - 3 OPTICALLY COUPLED ISOLATORS PACKAGE DIMENSIONS IN INCHES MM ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise noted) Storage Temperature .
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4flSb510
0Q0D17M
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transistor k 425
Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
Text: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED
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r-33-73
BU522
BU522A
BU522B
BU522)
BU522A)
BU522B)
BU522A,
transistor k 425
sc 107 transistor
npn, transistor, sc 107 b
BU522 transistor
transistor 0190
C107M
BU522
BU522B
221A-04
BU522A
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NEL230153
Abstract: GG01 NEL2300 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303
Text: NE C / CALIFORNIA NEC 1SE D h 427 414 0001275 T 'S h 't l T - 3 3 -Ö ? Ö NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS jta = 2 5 °q RATINGS • HIGH GAIN: G mb = 6.5 dB
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h427414
T-33-T-
NEL2300
V3301
NEL230353
NEL230153
GG01
transistor k42
3500 2301 151
k424
LARGE SIGNAL IMPEDANCES
transistor T330
NEL2301-53
NEL2303
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2N7075
Abstract: 100-C
Text: Tem ic 2N7075 Siliconix N-Channel Enhancement-Mode Transistor Product Summary VnsiV 100 r D S « n ) ( ß ) 0.065 I d (A) 30 TO -2S4A A H erm etic P ack ag e D o Case Isolated D S G Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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2N7075
100-C
S5M735
2N7075_
P-36736â
SSM735
100-C
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17-P10-Si
Abstract: E-1048-S602 46247 SSRPC DC24 S600 103 OPTO COUPLER din "46247" opto coupler specifications
Text: Solid State Remote Power Controller E-1048-S6xx Description The E-T-A Solid State Remote Power Controller SSRPC E-1048-S6xx is an opto decoupled transistorised switching device providing both protection and signalisation. It may be used wherever safe switching and protection of resistive,
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E-1048-S6xx
E-1048-S602
10-way)
17-P10-Si
E-1048-S6xx
17-P10-Si
E-1048-S602
46247
SSRPC
DC24
S600
103 OPTO COUPLER
din "46247"
opto coupler specifications
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Untitled
Abstract: No abstract text available
Text: MOTO RO LA SC XSTRS/R 15E D | b 3b72 S4 F GOASS^ 0 | T -3 3 -3 3 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA PNP MJD6036 NPN MJD6039 C o m p le m e n ta ry D a rlin g to n P o w e r T r a n sisto rs D P A K For Surface M o u n t A pplications D e sig n e d fo r ge ne ral p u rp o se p o w e r a n d sw itch in g s u c h a s ou tp u t o r d river
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MJD6036
MJD6039
Y14SM
MJD6036-1}
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1402C transistor
Abstract: S82D-6024 S82D-3024 S82D S82D-3005 S82D-3012 fan and lights remote 60jj transistor 1402c
Text: Switching Power Supply S82D Powerful Yet Compact 300 W or 600 W Power Supplies 5 V, 12 V, or 24 V output voltages available. 85 to 132 VAC or 170 to 264 VAC switchable input voltage for international use. Equipped with overvoltage and overload protection and remote sensing and control functions.
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100/200VAC
S82D-3005
S82D-ster
T08-E1-2
1402C transistor
S82D-6024
S82D-3024
S82D
S82D-3005
S82D-3012
fan and lights remote
60jj
transistor 1402c
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JE3055
Abstract: JE2955 current pm ic 3846 3055 npn mt 3055
Text: MOTOROLA SC X STR S /R F IS E D | b3b725>l ODBSSSI 1 | DPAK For Surface Mount Applications PIMP M JD2955 NPN M JD3055 T -3 ¡ Íf MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complem entary Pow er Transistors Designed for general purpose am plifier and low speed switching applications.
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b3b725
JE2955
JE3055
JD2955
JD3055
current pm ic 3846
3055 npn
mt 3055
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components MPSA44 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating
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MPSA44
150oC
625mW
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components MPSA44 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating
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MPSA44
150oC
625mW
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transistor mj 1503 motorola
Abstract: AN569 MTE30N50E tp 312 transistor
Text: MOTOROLA Order this document by MTE30N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTE30N50E ISOTOP TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 30 AMPERES 500 VOLTS
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MTE30N50E/D
MTE30N50E
MTE30N50E/D*
transistor mj 1503 motorola
AN569
MTE30N50E
tp 312 transistor
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PSMN130-200D
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN130-200D N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES SYMBOL PSMN130-200D QUICK REFERENCE DATA • ’Trench’ technology
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PSMN130-200D
OT428
603502/300/03/pp12
PSMN130-200D
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Untitled
Abstract: No abstract text available
Text: MCC MPSA94 omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features PNP Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating
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MPSA94
625mW
150oC
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