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    TRANSISTOR N 343 AD Search Results

    TRANSISTOR N 343 AD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR N 343 AD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cadstar pcb

    Abstract: cadstar shape synario cadstar ALLEGRO PART NUMBER INDEX
    Text: Synario ECS and Board Entry Index A Allegro Add symbol attributes . 3-38 Adding a netlister to a menu . 3-28, 3-41, 3-42 Allegro ECO Changes . 3-49


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    STMicroelectronics datasheet LF33

    Abstract: ACS756 ACS756SCA SMR1206 L6388 L4976D acs756sca-100b-pff-t R40-16 l6388e application ACS754LCB-050-PFF
    Text: UM0904 User manual Low voltage 3-phase power stage for electric traction with MC connector Introduction The STEVAL-IEM003V1 demonstration board is designed to drive a low voltage/high current 3-phase brushless synchronous or asynchronous motor up to 3 kW. This kit can be typically


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    PDF UM0904 STEVAL-IEM003V1 STMicroelectronics datasheet LF33 ACS756 ACS756SCA SMR1206 L6388 L4976D acs756sca-100b-pff-t R40-16 l6388e application ACS754LCB-050-PFF

    Untitled

    Abstract: No abstract text available
    Text: That H EW LETT WL'EM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High P erform ance, M edium Pow er, and Low N oise A p p lications 4-lead SC-70 SOT-343 Surface Mount Plastic


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    PDF HBFP-0450 SC-70 OT-343)

    Untitled

    Abstract: No abstract text available
    Text: What H E W L E T T 1"UM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Id eal for High Gain, Low N oise A p p lications Surface Mount Plastic Package/SOT-343 SC-70 O u tlin e 4T • T ran sition F requ en cy


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    PDF HBFP-0420 Package/SOT-343 SC-70) 5968-0129E

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE DEVELOPMENT D A T A ObE D bbS3T31 D0152D1 fl • RX3034B70W This data sheet contains advance information and specifications are subject to change without notice. PULSED MICROWAVE POWER TRANSISTORS NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C


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    PDF bbS3T31 D0152D1 RX3034B70W 0D152D5 33-iS.

    K105 transistor

    Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
    Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


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    PDF IGT4D11 K105 transistor transistor k105 IGT4E11 IGT-4E11

    D 1413 transistor

    Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
    Text: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249


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    PDF 16-Lead 14-LeadDIP 16-LeadDIP 256-Bit 64-Blt NTE74190 NTE74LS190 D 1413 transistor NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74LS190 5.1 diagram NTE74

    Untitled

    Abstract: No abstract text available
    Text: Ordering n u m ber: EN 1 6 1 4 B _ 2SC3636 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.


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    PDF 2SC3636 VCC-200V T03PB 4227KI/3095KI/N174KI 0Q2DB57

    BPX81-4

    Abstract: BPX81-3 BPX81 BPX-81-4 Typ BPX81-2 BPX80 BPX81-2 BPX82 BPX89 phototransistor array
    Text: SIEMENS BPX81 2-10 TRANSISTOR ARRAYS BPX82-89, 80 SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX82-89, SO BPX81 Dimension “A” . Part No. Min. .141 (3.6) .1 2 6 (3 .2 ) Max. BPX 82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291


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    PDF BPX81 BPX82-89, BPX82 76K130 18-pln 023SbQS BPX81-4 BPX81-3 BPX81 BPX-81-4 Typ BPX81-2 BPX80 BPX81-2 BPX82 BPX89 phototransistor array

    Untitled

    Abstract: No abstract text available
    Text: t 353*131 □ a ifla s i 1 • DEVELOPMENT DATA BUT22BF BUT22CF This data sheet contains advance information and specifications are subject to change without notice* N AMER PHILIPS/DISCRETE 35E D SILICON DIFFUSED POWER TRANSISTORS T - 33-0? High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope intended for use


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    PDF BUT22BF BUT22CF OT186 bb53T31 T-33-09

    Untitled

    Abstract: No abstract text available
    Text: rZ T S G S -T H O M S O N L9821 HIGH SIDE DRIVER ADVANCE DATA • 25A PEAK OUTPUT CURRENT ■ Ron = 100m£2 ■ DIAGNOSTIC AND PROTECTION FUNCTIONS . |iP COMPATIBLE ■ GROUNDED CASE ■ INRUSH CURRENT LIMITING CIRCUIT MULTIPOWER BCD TECHNOLOGY DESCRIPTION


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    PDF L9821 L9821 L9821.

    2N3546

    Abstract: MPQ3546 MPQ3646 MHQ3546
    Text: M H Q 3 5 4 6 s ilic o n M PQ 3 5 4 6 QUAD DUAL-IN LINE PNP SILICON ANNULAR SWITCHING TRANSISTORS QUAD DUAL-IN-LINE PNP SILICON SWITCHING TRANSISTOR . . . designed for iow-levei, high-speed switching applications. • Choice of Ceramic or Plastic Package


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    PDF MHQ3546 MPQ3546 2N3546 O-116 2N3546 MPQ3546 MPQ3646 MHQ3546

    MRC252

    Abstract: depletion mode BSD254 BSD254A BSD254AR
    Text: Philips Semiconductors ^ 7 1 I 0 flgb 0 Db7 716 Ib b N-channel depletion mode vertical D-MOS transistors FEATURES • P H IN ^Productspecilication BSD254; BSD254A; BSD254AR ’ QUICK REFERENCE DATA • High-speed switching • No secondary breakdown. SYMBOL


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    PDF 71IDflgb DDb7716 BSD254; BSD254A; BSD254AR BSD254 BSD254A 711002b BSD25* MRC252 depletion mode BSD254 BSD254A BSD254AR

    lc dash 2 b-5

    Abstract: siemens CNY17-2 b550 transistor PBTF
    Text: SIEMENS CNY17 SERIES 5497 t r io s p h o t o t r a n s is t o r OPTOCOUPLER FEA TU RES • High Current Transfer Ratio CNY17-1,40 to 80% CNY17-2,63 to 125% CNY17-3,100 to 200% CNY17-4,160 to 320% • Breakdown Voltage, 5300 V • Field-Effeet Stable by TRIOS*


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    PDF CNY17 CNY17-1 CNY17-2 CNY17-3 CNY17-4 E52744 -X001 lc dash 2 b-5 siemens CNY17-2 b550 transistor PBTF

    CNY 17-2 optocoupler

    Abstract: GE cny17 CNY 17-1 siemens opto coupler siemens n23f GE opto detector siemens CNY17-2
    Text: SIEMENS CMPN TS t OPTO MME 1 • fl23b32b 0004177 S BI SI EX SIEM EN S CNY17 SER IES SINGLE CHANNEL PHOTOTRANSISTOR OPTOCOUPLER - H l- 2 3 Pa cka ge D im e nsions in In ch es mm xrniti ■343(17) .*»(»«) .1 #(3J) .130(33) 1 T~ r \ " o- rSS .122(3.1) 3


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    PDF fl23b32b CNY17 CNY17-2 NY17-4 CNY 17-2 optocoupler GE cny17 CNY 17-1 siemens opto coupler siemens n23f GE opto detector siemens CNY17-2

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E D • APX bbSBTBl 0026*175 263 A b L V iJ ^ I- V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers of television transmitters and transposers. Features:


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    PDF BLV32F

    Untitled

    Abstract: No abstract text available
    Text: • bbS3131 □0236'ia 343 H A P X Philips Sem iconductors Data sheet status Product specification date of issue July 1993 0 g 3 3 4 N AMER PHILIPS/DISCRETE P-channel enhancement mode vertical D-MOS FET PINNING - SOT23 D ESCRIPTIO N Silicon p-channel enhancement


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    PDF bbS3131

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the


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    PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T2

    CRT electron gun

    Abstract: electron gun CRT AH8308EC RS330 AH830
    Text: /• */ / t/ f ' t/fcX Introduction The AH8308EC is a third generation hybrid triple RGB 8-bit video DAC that provides designers of color display system s with a com plete, selfcontained, ECL-compatible RGB com­ posite video subsystem in a 40-pin DIP. The AH8308EC features an advanced


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    PDF AH8308EC AH8308EC 40-pin CRT electron gun electron gun CRT RS330 AH830

    CNV17F-4

    Abstract: CNV17 CNY 42 optocoupler dioda CNV17F
    Text: SIEMENS FEATURES • H igh C urrent T ran sfer R atio C N Y 1 7F -1,40-80% C N Y 1 7F -2,63-125% C N Y 1 7 F -3 ,100-200% C N Y 1 7 F -4 ,160-320% 17 CNY F S E R IE S PHOTOTRAÑSÍSTOR NO BASE CONNECTION OPTOCOUPLER Package Dimensions in Inches mm t fa i fg] f t l


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    PDF SE52744 -X001 CNY17F-2 CNY17F-3 CNY17F CNV17F-4 CNV17 CNY 42 optocoupler dioda CNV17F

    lt1063

    Abstract: No abstract text available
    Text: u rm TECHNOLOGY LT1083/LT1084/LT1085 7.bK 5A, 3A Low Dropout Positive Adjustable Regulators F€ A T U A € S D C S C R IP T IO A • Three Terminal Adjustable The LT1083 series of positive adjustable regulators are de­ ■ Output Current of 3 A, 5A or 7.5 A


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    PDF LT1083/LT1084/LT1085 LT1083 O-220 CQ45-0 Mi-22 570-D& lt1063

    Optocoupler SFH 608

    Abstract: No abstract text available
    Text: SFH 608 SIEMENS FEATURES * Very High CTR at IF=1 mA, VCE=0.5 V - SFH608-2, 63-125% - SFH608-3,100-200% - SFH608-4,160-320% - SFH608-5, 250-500% • Specified Minimum CTR at lF=0.5 mA, VCE=1.5 V: > 32% typ. 120% Good CTR Linearity with Forward Current Low CTR Degradation


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    PDF SFH608-2, SFH608-3 SFH608-4 SFH608-5, E52744 SFH608 Optocoupler SFH 608

    Untitled

    Abstract: No abstract text available
    Text: P H S IG E C p l e s s e y AD VANC E INFORMATION 3047 3 2 SL6442 1GHZ AMPLIFIER/MIXER Supersedes May 1992 Edition The SL6442 UHF Amplifier and Mixer is designed for use in cordless telephones, cellular telephones, pagers and lowpower receivers operating at frequencies up to 1GHz. It


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    PDF SL6442 SL6442 422pF 100nF 3515nH 100nH 950MHz

    BF 331 TRANSISTORS

    Abstract: CIL TRANSISTOR 331 CIL TRANSISTOR TRANSISTOR TO-106 CIL 167 CIL 331 CIL331 00000CH CIL TRANSISTOR 343 transistor Bf 331
    Text: METALtCAN & EPOXY TRANSISTORS • CONTINENTAL DEVICE INDIA 32E D ■ 53033=14 00000CH 5 ■ 71 PROFESSIONAL GRADE APPLICATIONS Device VCEO VCBO VEBO Volts Volts Volts min min min IC hFE at bias VCE ICM PTA ICBO VCE sat fT mA - Volts mA mW MA Volts MHz max


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    PDF 00000CH BF 331 TRANSISTORS CIL TRANSISTOR 331 CIL TRANSISTOR TRANSISTOR TO-106 CIL 167 CIL 331 CIL331 CIL TRANSISTOR 343 transistor Bf 331