cadstar pcb
Abstract: cadstar shape synario cadstar ALLEGRO PART NUMBER INDEX
Text: Synario ECS and Board Entry Index A Allegro Add symbol attributes . 3-38 Adding a netlister to a menu . 3-28, 3-41, 3-42 Allegro ECO Changes . 3-49
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STMicroelectronics datasheet LF33
Abstract: ACS756 ACS756SCA SMR1206 L6388 L4976D acs756sca-100b-pff-t R40-16 l6388e application ACS754LCB-050-PFF
Text: UM0904 User manual Low voltage 3-phase power stage for electric traction with MC connector Introduction The STEVAL-IEM003V1 demonstration board is designed to drive a low voltage/high current 3-phase brushless synchronous or asynchronous motor up to 3 kW. This kit can be typically
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UM0904
STEVAL-IEM003V1
STMicroelectronics datasheet LF33
ACS756
ACS756SCA
SMR1206
L6388
L4976D
acs756sca-100b-pff-t
R40-16
l6388e application
ACS754LCB-050-PFF
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Untitled
Abstract: No abstract text available
Text: That H EW LETT WL'EM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High P erform ance, M edium Pow er, and Low N oise A p p lications 4-lead SC-70 SOT-343 Surface Mount Plastic
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HBFP-0450
SC-70
OT-343)
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T 1"UM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Id eal for High Gain, Low N oise A p p lications Surface Mount Plastic Package/SOT-343 SC-70 O u tlin e 4T • T ran sition F requ en cy
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HBFP-0420
Package/SOT-343
SC-70)
5968-0129E
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE DEVELOPMENT D A T A ObE D bbS3T31 D0152D1 fl • RX3034B70W This data sheet contains advance information and specifications are subject to change without notice. PULSED MICROWAVE POWER TRANSISTORS NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C
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bbS3T31
D0152D1
RX3034B70W
0D152D5
33-iS.
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K105 transistor
Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT4D11
K105 transistor
transistor k105
IGT4E11
IGT-4E11
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D 1413 transistor
Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
Text: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249
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16-Lead
14-LeadDIP
16-LeadDIP
256-Bit
64-Blt
NTE74190
NTE74LS190
D 1413 transistor
NTE74191
transistor K 1413
32 bit carry select adder code
transistor a 1413
NTE74LS191
NTE74LS190
5.1 diagram
NTE74
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Untitled
Abstract: No abstract text available
Text: Ordering n u m ber: EN 1 6 1 4 B _ 2SC3636 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.
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2SC3636
VCC-200V
T03PB
4227KI/3095KI/N174KI
0Q2DB57
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BPX81-4
Abstract: BPX81-3 BPX81 BPX-81-4 Typ BPX81-2 BPX80 BPX81-2 BPX82 BPX89 phototransistor array
Text: SIEMENS BPX81 2-10 TRANSISTOR ARRAYS BPX82-89, 80 SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX82-89, SO BPX81 Dimension “A” . Part No. Min. .141 (3.6) .1 2 6 (3 .2 ) Max. BPX 82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291
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BPX81
BPX82-89,
BPX82
76K130
18-pln
023SbQS
BPX81-4
BPX81-3
BPX81
BPX-81-4
Typ BPX81-2
BPX80
BPX81-2
BPX82
BPX89
phototransistor array
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Untitled
Abstract: No abstract text available
Text: t 353*131 □ a ifla s i 1 • DEVELOPMENT DATA BUT22BF BUT22CF This data sheet contains advance information and specifications are subject to change without notice* N AMER PHILIPS/DISCRETE 35E D SILICON DIFFUSED POWER TRANSISTORS T - 33-0? High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope intended for use
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BUT22BF
BUT22CF
OT186
bb53T31
T-33-09
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Untitled
Abstract: No abstract text available
Text: rZ T S G S -T H O M S O N L9821 HIGH SIDE DRIVER ADVANCE DATA • 25A PEAK OUTPUT CURRENT ■ Ron = 100m£2 ■ DIAGNOSTIC AND PROTECTION FUNCTIONS . |iP COMPATIBLE ■ GROUNDED CASE ■ INRUSH CURRENT LIMITING CIRCUIT MULTIPOWER BCD TECHNOLOGY DESCRIPTION
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L9821
L9821
L9821.
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2N3546
Abstract: MPQ3546 MPQ3646 MHQ3546
Text: M H Q 3 5 4 6 s ilic o n M PQ 3 5 4 6 QUAD DUAL-IN LINE PNP SILICON ANNULAR SWITCHING TRANSISTORS QUAD DUAL-IN-LINE PNP SILICON SWITCHING TRANSISTOR . . . designed for iow-levei, high-speed switching applications. • Choice of Ceramic or Plastic Package
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MHQ3546
MPQ3546
2N3546
O-116
2N3546
MPQ3546
MPQ3646
MHQ3546
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MRC252
Abstract: depletion mode BSD254 BSD254A BSD254AR
Text: Philips Semiconductors ^ 7 1 I 0 flgb 0 Db7 716 Ib b N-channel depletion mode vertical D-MOS transistors FEATURES • P H IN ^Productspecilication BSD254; BSD254A; BSD254AR ’ QUICK REFERENCE DATA • High-speed switching • No secondary breakdown. SYMBOL
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71IDflgb
DDb7716
BSD254;
BSD254A;
BSD254AR
BSD254
BSD254A
711002b
BSD25*
MRC252
depletion mode
BSD254
BSD254A
BSD254AR
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lc dash 2 b-5
Abstract: siemens CNY17-2 b550 transistor PBTF
Text: SIEMENS CNY17 SERIES 5497 t r io s p h o t o t r a n s is t o r OPTOCOUPLER FEA TU RES • High Current Transfer Ratio CNY17-1,40 to 80% CNY17-2,63 to 125% CNY17-3,100 to 200% CNY17-4,160 to 320% • Breakdown Voltage, 5300 V • Field-Effeet Stable by TRIOS*
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CNY17
CNY17-1
CNY17-2
CNY17-3
CNY17-4
E52744
-X001
lc dash 2 b-5
siemens CNY17-2
b550 transistor
PBTF
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CNY 17-2 optocoupler
Abstract: GE cny17 CNY 17-1 siemens opto coupler siemens n23f GE opto detector siemens CNY17-2
Text: SIEMENS CMPN TS t OPTO MME 1 • fl23b32b 0004177 S BI SI EX SIEM EN S CNY17 SER IES SINGLE CHANNEL PHOTOTRANSISTOR OPTOCOUPLER - H l- 2 3 Pa cka ge D im e nsions in In ch es mm xrniti ■343(17) .*»(»«) .1 #(3J) .130(33) 1 T~ r \ " o- rSS .122(3.1) 3
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fl23b32b
CNY17
CNY17-2
NY17-4
CNY 17-2 optocoupler
GE cny17
CNY 17-1 siemens
opto coupler siemens
n23f
GE opto detector
siemens CNY17-2
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E D • APX bbSBTBl 0026*175 263 A b L V iJ ^ I- V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers of television transmitters and transposers. Features:
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BLV32F
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Untitled
Abstract: No abstract text available
Text: • bbS3131 □0236'ia 343 H A P X Philips Sem iconductors Data sheet status Product specification date of issue July 1993 0 g 3 3 4 N AMER PHILIPS/DISCRETE P-channel enhancement mode vertical D-MOS FET PINNING - SOT23 D ESCRIPTIO N Silicon p-channel enhancement
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bbS3131
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the
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2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T2
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CRT electron gun
Abstract: electron gun CRT AH8308EC RS330 AH830
Text: /• */ / t/ f ' t/fcX Introduction The AH8308EC is a third generation hybrid triple RGB 8-bit video DAC that provides designers of color display system s with a com plete, selfcontained, ECL-compatible RGB com posite video subsystem in a 40-pin DIP. The AH8308EC features an advanced
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AH8308EC
AH8308EC
40-pin
CRT electron gun
electron gun CRT
RS330
AH830
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CNV17F-4
Abstract: CNV17 CNY 42 optocoupler dioda CNV17F
Text: SIEMENS FEATURES • H igh C urrent T ran sfer R atio C N Y 1 7F -1,40-80% C N Y 1 7F -2,63-125% C N Y 1 7 F -3 ,100-200% C N Y 1 7 F -4 ,160-320% 17 CNY F S E R IE S PHOTOTRAÑSÍSTOR NO BASE CONNECTION OPTOCOUPLER Package Dimensions in Inches mm t fa i fg] f t l
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SE52744
-X001
CNY17F-2
CNY17F-3
CNY17F
CNV17F-4
CNV17
CNY 42 optocoupler
dioda
CNV17F
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lt1063
Abstract: No abstract text available
Text: u rm TECHNOLOGY LT1083/LT1084/LT1085 7.bK 5A, 3A Low Dropout Positive Adjustable Regulators F€ A T U A € S D C S C R IP T IO A • Three Terminal Adjustable The LT1083 series of positive adjustable regulators are de ■ Output Current of 3 A, 5A or 7.5 A
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LT1083/LT1084/LT1085
LT1083
O-220
CQ45-0
Mi-22
570-D&
lt1063
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Optocoupler SFH 608
Abstract: No abstract text available
Text: SFH 608 SIEMENS FEATURES * Very High CTR at IF=1 mA, VCE=0.5 V - SFH608-2, 63-125% - SFH608-3,100-200% - SFH608-4,160-320% - SFH608-5, 250-500% • Specified Minimum CTR at lF=0.5 mA, VCE=1.5 V: > 32% typ. 120% Good CTR Linearity with Forward Current Low CTR Degradation
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SFH608-2,
SFH608-3
SFH608-4
SFH608-5,
E52744
SFH608
Optocoupler SFH 608
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Untitled
Abstract: No abstract text available
Text: P H S IG E C p l e s s e y AD VANC E INFORMATION 3047 3 2 SL6442 1GHZ AMPLIFIER/MIXER Supersedes May 1992 Edition The SL6442 UHF Amplifier and Mixer is designed for use in cordless telephones, cellular telephones, pagers and lowpower receivers operating at frequencies up to 1GHz. It
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SL6442
SL6442
422pF
100nF
3515nH
100nH
950MHz
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BF 331 TRANSISTORS
Abstract: CIL TRANSISTOR 331 CIL TRANSISTOR TRANSISTOR TO-106 CIL 167 CIL 331 CIL331 00000CH CIL TRANSISTOR 343 transistor Bf 331
Text: METALtCAN & EPOXY TRANSISTORS • CONTINENTAL DEVICE INDIA 32E D ■ 53033=14 00000CH 5 ■ 71 PROFESSIONAL GRADE APPLICATIONS Device VCEO VCBO VEBO Volts Volts Volts min min min IC hFE at bias VCE ICM PTA ICBO VCE sat fT mA - Volts mA mW MA Volts MHz max
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00000CH
BF 331 TRANSISTORS
CIL TRANSISTOR 331
CIL TRANSISTOR
TRANSISTOR TO-106
CIL 167
CIL 331
CIL331
CIL TRANSISTOR 343
transistor Bf 331
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