TRANSISTOR N Y Search Results

TRANSISTOR N Y Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR N Y Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N6079 Abstract: No abstract text available Text: 2N6079 High-voltage high-power silicon N-P-N transistor. 8.14 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6079 Online Store 2N6079 Diodes High-voltage high-power silicon N-P-N transistor. Transistors Integrated Circuits Optoelectronics	Original	2N6079 2N6079 com/2n6079	PDF
2N697 Abstract: No abstract text available Text: 2N697 Silicon N-P-N Planar Transistor. 1.61 Transistors Bipolar Silicon NPN Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N697 Online Store 2N697 Diodes Silicon N -P-N Planar Transistor. Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	2N697 2N697 O-205AD com/2n697	PDF
2n6287 Abstract: No abstract text available Text: 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. . Page 1 of 1 Enter Your Part # Home Part Number: 2N6287 Online Store 2N6287 Diodes 20 Transistors A complementary N -P-N and P-N -P monolithic Integrated Circuits darlington power transistor. High voltage rating 100 V	Original	2N6287 2N6287 com/2n6287	PDF
BUL416 Abstract: BUL416B Text: BUL416 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n STMicroelectronics PREFERRED SALES TYPE n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n VERY HIGH SWITCHING SPEED n FULLY CHARACTERISEZ AT 125 oC n LOW SPREAD OF DYNAMIC PARAMETERS Figure 1: Package 3	Original	BUL416 O-220 BUL416 BUL416B	PDF
BFR65 Abstract: BFQ34 multi-emitter transistor n 431 transistor Transistor PJ 431 Text: N AMER PHILIPS/DISCRETE 2SE » • btS3T31 GG1ÔQQS 1 BFQ34 is recommended for new design y \ I BFR65 T - S 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N multi-emitter silicon transistor in a capstan envelope. The transistor has extremely good intermoduiation properties and high power gain.	OCR Scan	BFQ34 btS3T31 BFR65 BFR65 multi-emitter transistor n 431 transistor Transistor PJ 431	PDF
blw95 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a	OCR Scan	bbS3T31 0DS1S14 blw95	PDF
BLX92A Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944 Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe	OCR Scan	BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944	PDF
transistor TIP3055 Abstract: No abstract text available Text: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.	OCR Scan	TIP3055 OT-93 TIP2955. 003302b bbS3T31 00350Efl transistor TIP3055	PDF
NTM2369 Abstract: No abstract text available Text: SILICON TRANSISTOR NTM2369 HIGH SPEED SW ITC H IN G . GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD D E S C R IP T IO N T he N T M 2 3 6 9 is N P N transistor, designed for general purpose am plifier and high speed sw itching applications for h yb rid 1C.	OCR Scan	NTM2369 NTM2369	PDF
yn 1018 Abstract: MPF820 RS-50S Scans-00100834 Text: MPF820 silicon Advance Inform ation JUNCTION FIELD-EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION FIELD-EIFFECT TRANSISTOR SILIC O N N -CHANNEL . . . depletion mode jun ctio n fie ld -e ffect transistor designed fo r low noise grounded gate RF a m plifier applications.	OCR Scan	MPF820 RS-50S! 330pF yn 1018 MPF820 RS-50S Scans-00100834	PDF
thyristor firing circuits Abstract: RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A Text: D Arrays Transistor-continued General-Purpose High-Voltage n -p -n /p -n -p Transistor Arrays CA3096 CA 3096A 3 Independent n-p-n Transistoirs/2 Independent p-n-p Transistors D iffe re n tial am p lifie rs • Level sh ifte rs T h y ris t o r firin g circuits	OCR Scan	ca3096 ca3096a CS-23846 16-Liad CA3096> 100/iA, CA3018, CA3018A 120MHz lc-10mA thyristor firing circuits RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A	PDF
K 3699 transistor Abstract: BLY88A 3699 npn pscw Text: N AMER PHILIPS/DISCRETE 86D 01894 D ObE D • y ^53^31 00mi32 T j J BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is	OCR Scan	GGmi32 BLY88A K 3699 transistor BLY88A 3699 npn pscw	PDF
Transistor p1f Abstract: No abstract text available Text: • b b S B ' m 002Sflfl0 TTfl B A P X N AUER PHILIPS/DISCRETE PMBT5550 b7E T> yv SILICON N-P-N HIGH-VOLTAGE TRANSISTOR N-P-N high-voltage small-signal transistor fo r general purposes and especially telephony applications and encapsulated in a SOT-23 envelope.	OCR Scan	002Sflfl0 PMBT5550 OT-23 Transistor p1f	PDF
marking 557 SOT143 Abstract: No abstract text available Text: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor	OCR Scan	BCV63 BCV63B OT-143 BCV64. bbS3R31 0Q3M553 marking 557 SOT143	PDF

Untitled Abstract: No abstract text available Text: I I • MAINTENANCE TYPE bbS3T31 a03^7Mfi 360 ■ APX B L y g 3 A N ANER PHI LIPS/DISCRETE hlZ D_ V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran	OCR Scan	bbS3T31 005T7S7 BLY93C	PDF
2N3054 Abstract: C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054 Text: 2 N 3054 NPN Power transistor for AF amplifier and switching applications 2 N 3 0 5 4 is a single-diffused N P N silicon transistor in a T O -6 6 case. The collector is electrically connected to the case. The transistor 2 N 3 0 5 4 is particularly suitable	OCR Scan	2N3054 Q62702-U Q62901-B Q62901-B11 200mA 160mA 120mA 100mA C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054	PDF
Untitled Abstract: No abstract text available Text: L _ _ _ _ _ N AMER PHILIPS/DISCRETE ObE D • bbSB'lBl O O l S O n & _ ■ LWE2015R y y P 2 i - o r MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to 2,3 GHz in c.w.	OCR Scan	LWE2015R S3T31 DQ1S033	PDF
transistor buv 90 Abstract: BCY 85 Q60203-Y66 BCY 66 Text: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).	OCR Scan	Q60203-Y66 transistor buv 90 BCY 85 Q60203-Y66 BCY 66	PDF
transistor marking T2 Abstract: TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor Text: • ^53^31 GGEMSSM HAPX N AMER PHILIPS/DISCRETE BCV64 BCV64B b7E D SILICON PLANAR TRANSISTOR Double P N-P transistor in a plastic SOT-143 envelope. Intended fo r Schmitt-trigger applications. N-P-N complement is the BCV63. QUICK REFERENCE DATA transistor Collector-emitter voltage open base	OCR Scan	BCV64 BCV64B OT-143 BCV63. DDEU55b transistor marking T2 TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor	PDF
MP-25 Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.	OCR Scan	NP40N06CLC NP40N06DLC NP40N06ELC 175dgree 027QMAX. 1000pF O-220AB O-262AA O-220SMD MP-25 NP40N06ELC TO-220SMD	PDF
BFR64 Abstract: multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798 BFQ34 Text: N AMER PHILIPS/DISCRETE asE d m bb53i3i aoi?ciT? a B FQ 34 is recommended for new design BFR64 T - 3 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N m ulti-em itter transistor in a capstan envelope. The transistor has extrem ely good intermodulation properties and high power gain.	OCR Scan	BFQ34 BFR64 7z72605 BFR64 multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798	PDF
BC450 Abstract: No abstract text available Text: BC450 PNF SILICON TRANSISTOR « w w w w w w iw iw iw im m w w w w w n n n n n n n n n n n w iw iw iw iw iw w w w w w w w w w w w in n í^ ^ DESCRIPTION P4.68CÛ.18J BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly	OCR Scan	BC450 300mA 625mW 100mA 100MHz 300/iS.	PDF
2SK1492 Abstract: MEI-1202 TEA-1035 2sk14 TC239 Text: DATA SHEET ,y N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1492 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION The 2SK1492 is N-channel M O S Field Effect Transistor de in millimeters signed fo r high voltage switching applications.	OCR Scan	2SK1492 IEI-1209) MEI-1202 TEA-1035 2sk14 TC239	PDF
Untitled Abstract: No abstract text available Text: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter	OCR Scan	BD131 OT-32 BD132. DD34243 BD132 003424b	PDF

TRANSISTOR N Y Search Results

TRANSISTOR N Y Result Highlights (5)

TRANSISTOR N Y Datasheets Context Search

2N6079

2N697

2n6287

BUL416

BFR65

blw95

BLX92A

transistor TIP3055

NTM2369

yn 1018

thyristor firing circuits

K 3699 transistor

Transistor p1f

marking 557 SOT143

Untitled

2N3054

Untitled

transistor buv 90

transistor marking T2

MP-25

BFR64

BC450

2SK1492

Untitled