TRANSISTOR N Y Search Results

TRANSISTOR N Y Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR N Y Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
blw95 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a	OCR Scan	bbS3T31 0DS1S14 blw95	PDF
BLX92A Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944 Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe	OCR Scan	BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944	PDF
transistor TIP3055 Abstract: No abstract text available Text: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.	OCR Scan	TIP3055 OT-93 TIP2955. 003302b bbS3T31 00350Efl transistor TIP3055	PDF
yn 1018 Abstract: MPF820 RS-50S Scans-00100834 Text: MPF820 silicon Advance Inform ation JUNCTION FIELD-EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION FIELD-EIFFECT TRANSISTOR SILIC O N N -CHANNEL . . . depletion mode jun ctio n fie ld -e ffect transistor designed fo r low noise grounded gate RF a m plifier applications.	OCR Scan	MPF820 RS-50S! 330pF yn 1018 MPF820 RS-50S Scans-00100834	PDF
thyristor firing circuits Abstract: RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A Text: D Arrays Transistor-continued General-Purpose High-Voltage n -p -n /p -n -p Transistor Arrays CA3096 CA 3096A 3 Independent n-p-n Transistoirs/2 Independent p-n-p Transistors D iffe re n tial am p lifie rs • Level sh ifte rs T h y ris t o r firin g circuits	OCR Scan	ca3096 ca3096a CS-23846 16-Liad CA3096> 100/iA, CA3018, CA3018A 120MHz lc-10mA thyristor firing circuits RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A	PDF
Transistor p1f Abstract: No abstract text available Text: • b b S B ' m 002Sflfl0 TTfl B A P X N AUER PHILIPS/DISCRETE PMBT5550 b7E T> yv SILICON N-P-N HIGH-VOLTAGE TRANSISTOR N-P-N high-voltage small-signal transistor fo r general purposes and especially telephony applications and encapsulated in a SOT-23 envelope.	OCR Scan	002Sflfl0 PMBT5550 OT-23 Transistor p1f	PDF
marking 557 SOT143 Abstract: No abstract text available Text: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor	OCR Scan	BCV63 BCV63B OT-143 BCV64. bbS3R31 0Q3M553 marking 557 SOT143	PDF
Untitled Abstract: No abstract text available Text: I I • MAINTENANCE TYPE bbS3T31 a03^7Mfi 360 ■ APX B L y g 3 A N ANER PHI LIPS/DISCRETE hlZ D_ V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran	OCR Scan	bbS3T31 005T7S7 BLY93C	PDF
2N3054 Abstract: C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054 Text: 2 N 3054 NPN Power transistor for AF amplifier and switching applications 2 N 3 0 5 4 is a single-diffused N P N silicon transistor in a T O -6 6 case. The collector is electrically connected to the case. The transistor 2 N 3 0 5 4 is particularly suitable	OCR Scan	2N3054 Q62702-U Q62901-B Q62901-B11 200mA 160mA 120mA 100mA C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054	PDF
Untitled Abstract: No abstract text available Text: L _ _ _ _ _ N AMER PHILIPS/DISCRETE ObE D • bbSB'lBl O O l S O n & _ ■ LWE2015R y y P 2 i - o r MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to 2,3 GHz in c.w.	OCR Scan	LWE2015R S3T31 DQ1S033	PDF
transistor buv 90 Abstract: BCY 85 Q60203-Y66 BCY 66 Text: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).	OCR Scan	Q60203-Y66 transistor buv 90 BCY 85 Q60203-Y66 BCY 66	PDF
MP-25 Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.	OCR Scan	NP40N06CLC NP40N06DLC NP40N06ELC 175dgree 027QMAX. 1000pF O-220AB O-262AA O-220SMD MP-25 NP40N06ELC TO-220SMD	PDF
2SK1492 Abstract: MEI-1202 TEA-1035 2sk14 TC239 Text: DATA SHEET ,y N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1492 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION The 2SK1492 is N-channel M O S Field Effect Transistor de in millimeters signed fo r high voltage switching applications.	OCR Scan	2SK1492 IEI-1209) MEI-1202 TEA-1035 2sk14 TC239	PDF
Untitled Abstract: No abstract text available Text: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter	OCR Scan	BD131 OT-32 BD132. DD34243 BD132 003424b	PDF

Part Marking STMicroelectronics Abstract: BUL416A Marking STMicroelectronics electronic ballast for fluorescent lighting transistor Electronic ballast marking L30 BUL416 BUL416B transistor BS 170 Text: BUL416 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Figure 1: Package STMicroelectronics PREFERRED SALES TYPE n n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n VERY HIGH SWITCHING SPEED n FULLY CHARACTERISEZ AT 125 oC n LOW SPREAD OF DYNAMIC PARAMETERS 3	Original	BUL416 O-220 Part Marking STMicroelectronics BUL416A Marking STMicroelectronics electronic ballast for fluorescent lighting transistor Electronic ballast marking L30 BUL416 BUL416B transistor BS 170	PDF
transistor tt 2222 Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56 Text: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran	OCR Scan	LY93A BLY93A transistor tt 2222 BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56	PDF
transistor ESM 30 Abstract: ESM269 Text: ESM 269 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M , PLA N A R E P IT A X IA L PRELIM IN A R Y DATA N O T I C E P R E L IM I N A I R E ESM 269 is a very tow noise VHF transistor. It features low intermo dulation distorsion V CBO	OCR Scan		PDF
multi-emitter transistor Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E T> • bbSB'ni QDS^bSl TTH « A P X II BLX96 M A IN T E N A N C E T Y P E U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposers and transmitters.	OCR Scan	BLX96 BLX98 multi-emitter transistor	PDF
2N3441 Abstract: 3441 Text: 2 N 3441 Nicht für N eu en tw icklu n g N P N -Leistungs-Transistor fü r N F -V e rs tä rk e r und Schalteran w en dungen 2 N 3441 ist ein einfachdiffundierter NPN-Silizium-Transistor im Gehäuse T O -6 6. Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor 2 N 3441 eignet sich besonders als	OCR Scan	Q62702-D34 Q62902-B11-A Q62902-B11-B 2N3441 3441	PDF
d 331 transistor 1080 Abstract: bly87c MSB056 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLY87C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,	Original	BLY87C SC08a d 331 transistor 1080 bly87c MSB056	PDF
SOT123 Package Abstract: BLV21 SOT123 L2-7 TURN transistor Common Base configuration transistor Common collector configuration TRANSISTOR W2 "beryllium oxide" 4312 020 36640 ceramic capacitor philips 561 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV21 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,	Original	BLV21 SC08a SOT123 Package BLV21 SOT123 L2-7 TURN transistor Common Base configuration transistor Common collector configuration TRANSISTOR W2 "beryllium oxide" 4312 020 36640 ceramic capacitor philips 561	PDF
L7E transistor Abstract: No abstract text available Text: •I bbS3^31 33T H A P X N AUER PHILIPS/DISCRETE PMBT5401 L7E ]> y v SILICON P-N-P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope. QUICK REFERENCE DATA	OCR Scan	PMBT5401 OT-23 OT-23es L7E transistor	PDF
Untitled Abstract: No abstract text available Text: b7E D • bb53=i31 D0E3R3S 04D H A P X BST70A N AMER PHILIPS/DISCRETE y v N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.	OCR Scan	BST70A bb53331 D023T3A	PDF
ceramic trimmer capacitor Abstract: transistor Common Base configuration philips Trimmer 60 pf BLY88C MSB056 15 w RF POWER TRANSISTOR NPN BLy88 list of transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET BLY88C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,	Original	BLY88C SC08a ceramic trimmer capacitor transistor Common Base configuration philips Trimmer 60 pf BLY88C MSB056 15 w RF POWER TRANSISTOR NPN BLy88 list of transistor	PDF

TRANSISTOR N Y Search Results

TRANSISTOR N Y Result Highlights (5)

TRANSISTOR N Y Datasheets Context Search

blw95

BLX92A

transistor TIP3055

yn 1018

thyristor firing circuits

Transistor p1f

marking 557 SOT143

Untitled

2N3054

Untitled

transistor buv 90

MP-25

2SK1492

Untitled

Part Marking STMicroelectronics

transistor tt 2222

transistor ESM 30

multi-emitter transistor

2N3441

d 331 transistor 1080

SOT123 Package

L7E transistor

Untitled

ceramic trimmer capacitor