TRANSISTOR N6 Search Results

TRANSISTOR N6 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR N6 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list Text: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor	Original	X13769XJ2V0CD00 O-126) MP-25 O-220) MP-40 MP-45 MP-45F O-220 MP-80 MP-10 transistor POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
Untitled Abstract: No abstract text available Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to	Original	NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D	PDF
419B-02 Abstract: NSM11156DW6T1G marking .544 sot363 Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to	Original	NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D 419B-02 marking .544 sot363	PDF
RT3N66M Abstract: No abstract text available Text: PRELIMINARY RT3N66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N430 chip and RT1N430 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent.	Original	RT3N66M RT1N430 SC-88 JEITASC-88 RT3N66M	PDF
RT3N66M Abstract: RT1N43 Text: PRELIMINARY RT3N66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3N66M is compound transistor built with two RT1N430 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.	Original	RT3N66M RT3N66M RT1N430 SC-88 JEITASC-88 RT1N43	PDF
1N60E Abstract: N60E MGP11N60E Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGPll N60m DATA DesignerSTM Data Sheet MGPI 1N60E insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	Original	1N60E MGP11N60E 30H7G2140 WI-2447 MGP11N60UD 1N60E N60E MGP11N60E	PDF
N60E Abstract: MGW21N60ED MGW21 TME 86 T247 Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW21N60ED/D DATA — Preliminary — lnsuiated Gate Bipolar Transistor Data Sheet MGW21 N60ED N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra-fast rectifier and uses an advanced	Original	MGW21N60ED/D MGW21 N60ED 140W41 24H609 N60ED/D N60E MGW21N60ED TME 86 T247	PDF
2SA1444 equivalent Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992	Original	X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent	PDF
MRC036 Abstract: MRC053 MRC038 MRC031 MRC035 MRC034 BFS25A MRC075 MRC033 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 December 1997 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption	Original	BFS25A OT323 OT323 MBC870 OT323. MRC036 MRC053 MRC038 MRC031 MRC035 MRC034 BFS25A MRC075 MRC033	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN  Low noise figure DESCRIPTION	Original	BFS25A OT323 OT323 MBC870 OT323. R77/03/pp13	PDF
MRC034 Abstract: MRC036 MRC031 BFS25A RF NPN POWER TRANSISTOR 3 GHZ Replacement Handbook MRC053 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN  Low noise figure	Original	BFS25A OT323 OT323 MBC870 OT323. R77/03/pp13 MRC034 MRC036 MRC031 BFS25A RF NPN POWER TRANSISTOR 3 GHZ Replacement Handbook MRC053	PDF
transistor smd marking CODE n6 Abstract: PBSS4220V PBSS5220V MARKING CODE SMD IC Text: PBSS4220V 20 V, 2 A NPN low VCEsat BISS transistor Rev. 01 — 6 February 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.	Original	PBSS4220V OT666 PBSS5220V. PBSS4220V transistor smd marking CODE n6 PBSS5220V MARKING CODE SMD IC	PDF

la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
transistor BD 800 Abstract: transistor BD 110 Text: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal	OCR Scan	A235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 800 transistor BD 110	PDF
Untitled Abstract: No abstract text available Text: 2 N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ceo =50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Rating Unit VcBO V ceo V ebo lc Pc Tj Tstg 60	OCR Scan	N6428/6428A 625mW 2N5088 10KHz	PDF
N60E Abstract: No abstract text available Text: MOTOROLA Order this document by MGP21 N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP21N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high	OCR Scan	MGP21 N60E/D MGP21N60ED N60E	PDF
2N6428A Abstract: No abstract text available Text: 2 N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR T O -92 • C ollector-E m itter Voltage: VCeo= 50V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage	OCR Scan	N6428/6428A 2N6428A	PDF
diode lt 238 Abstract: 21N60ED Text: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced	OCR Scan	MGW21 N60ED/D MGW21N60ED/D diode lt 238 21N60ED	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan		PDF
BT816 Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728 Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan	mm/13" O-92S) BT816 TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728	PDF

TRANSISTOR N6 Search Results

TRANSISTOR N6 Result Highlights (5)

TRANSISTOR N6 Datasheets Context Search

transistor

MN1280

oz960

Untitled

419B-02

RT3N66M

RT3N66M

1N60E

N60E

2SA1444 equivalent

MRC036

Untitled

MRC034

transistor smd marking CODE n6

la 4440 amplifier circuit diagram 300 watt

transistor BD 800

Untitled

N60E

2N6428A

diode lt 238

y51 h 120c

sx3704

RCA H 541

BT816