TRANSISTOR NC Search Results

TRANSISTOR NC Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR NC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
pnp DARLINGTON TRANSISTOR ARRAY Abstract: M54583FP nmos transistor symbol switching transistor M54585 DARLINGTON TRANSISTOR ARRAY Text: <TRANSISTOR ARRAY> M54583FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY SINK TYPE DESCRIPTION PIN CONFIGURATION M54583FP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform	Original	PDF	M54583FP 400mA M54583FP 400mA) pnp DARLINGTON TRANSISTOR ARRAY nmos transistor symbol switching transistor M54585 DARLINGTON TRANSISTOR ARRAY
M54513FP Abstract: M5451 Text: <TRANSISTOR ARRAY> M54513FP 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE DESCRIPTION PIN CONFIGURATION M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semicon- ductor integrated NC circuits perform high-current driving with extremely low input-	Original	PDF	M54513FP M54513FP M5451
2SA2160 Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027 Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series	Original	PDF	O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
M54563FP Abstract: No abstract text available Text: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high	Original	PDF	M54563FP 500mA M54563FP 500mA)
Untitled Abstract: No abstract text available Text: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform	Original	PDF	M63840FP 500mA M63840FP 500mA)
Untitled Abstract: No abstract text available Text: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform	Original	PDF	M63840KP 500mA M63840KP 500mA)
M54562FP Abstract: No abstract text available Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high	Original	PDF	M54562FP 500mA M54562FP 500mA)
darlington Mitsubishi Abstract: 20P2N-A DARLINGTON ARRAYS Text: <TRANSISTOR ARRAY> M54522FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE DESCRIPTION PIN CONFIGURATION M54522FP is an eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. NC Both the semiconductor integrated circuits perform high-current	Original	PDF	M54522FP 400mA M54522FP 400mA) darlington Mitsubishi 20P2N-A DARLINGTON ARRAYS
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic	Original	PDF	DTA143EE 416/SC
6aa marking Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic	Original	PDF	DTA114YE 416/SC 6aa marking
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	PDF	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
PT 4304 a transistor Abstract: 2SC3587 noise diode Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise	Original	PDF	2SC3587 2SC3587 PT 4304 a transistor noise diode
2SCR522M Abstract: No abstract text available Text: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Dimensions (Unit : mm) Structure NPN silicon epitaxial planar transistor VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC	Original	PDF	2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522M 2SCR522EB R1010A

Untitled Abstract: No abstract text available Text: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC	Original	PDF	2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522M 2SCR522EB R1010A
Mitsubishi M54564 Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide	Original	PDF	A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
transistor sc59 marking Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a	Original	PDF	DTC114TE DTC114TE 416/SC transistor sc59 marking
6aa marking Abstract: 327 SOT-6 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a	Original	PDF	DTC114YE DTC114YE 416/SC 6aa marking 327 SOT-6
transistor Abstract: transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP Text: Alphanumerical List of Types TVpe Page 2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 Small-Signal Transistor NPN Small-Signal Transistor (PNP) Small-Signal Transistor (NPN) Small-Signal Transistor (PNP) DMOS Transistor (N-Channel) DMOS Transistor (N-Channel)	OCR Scan	PDF	2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 BC327 BC328 BC337 BC338 transistor transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP
Untitled Abstract: No abstract text available Text: TRANSISTOR/TO SOCKETS TO SERIES TO-3 Power Transistor Sockets SPECIFY TO-3 PART NUMBER FROM THE CHART BELOW Quality sockets simplify transistor mounting, uses chassis as a heat sink. Integral mounting saddle is tapped for 6-32 NC screws. Body will not crack/chip during handling	OCR Scan	PDF	O-340-T O-340-G O-34O0-T T0-360-T 852-26904858-Fax:
transistor A 564 Abstract: S-AV8 2-13B1A 564 transistor S-AU4 Text: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the	OCR Scan	PDF	TcS90 transistor A 564 S-AV8 2-13B1A 564 transistor S-AU4
MJE2955 Abstract: 2N3645 bc557 BC307 BC212 Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer	OCR Scan	PDF	O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212
Untitled Abstract: No abstract text available Text: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for	OCR Scan	PDF	OD300A40/6Q E76102 SQD300A 400/600V --A40 0Q02B06
BUX20 Abstract: bux 716 transistor BUX Text: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection	OCR Scan	PDF	BUX20 CB-159 BUX20 bux 716 transistor BUX

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TRANSISTOR NC Search Results

TRANSISTOR NC Result Highlights (5)

TRANSISTOR NC Datasheets Context Search

MN1280

pnp DARLINGTON TRANSISTOR ARRAY

M54513FP

2SA2160

M54563FP

Untitled

Untitled

M54562FP

darlington Mitsubishi

Untitled

6aa marking

oz960

PT 4304 a transistor

2SCR522M

Untitled

Mitsubishi M54564

transistor sc59 marking

6aa marking

transistor

Untitled

transistor A 564

MJE2955

Untitled

BUX20