PA101B
Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
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PA101
PA102
PA103
PA104
P10944EJ2V0AN00
PA101B
PA103
PA104
MICRO-X TRANSISTOR MARK Q6
4 npn transistor ic 14pin
upa101g
PA102B
UPA101
P10944EJ2V0AN00
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D1802
Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)
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2SB624A
2SD596A
D1802
TRANSISTOR BV3
2SB624A
nec marking power amplifier
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2SD596A
Abstract: transistor DV3 D1788 2SB624
Text: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)
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2SD596A
2SB624
2SD596A
transistor DV3
D1788
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transistor t07
Abstract: NEX2303 NE 2301 02cj NEX2300 NEX2301 NEX230187 NEX2302 NEX230265 NEX230365
Text: NEC/ CALIFORNIA NEC b42?m4 0001202 S 1SE D .7 -3 3 r < 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H PO W ER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad vanced Stepped Electrode Transistor SET structure with
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NEX2300
NEX2300
NEX2301
NEX2302
NEX2303
NEX230365
transistor t07
NE 2301
02cj
NEX230187
NEX230265
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NEX2301
Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
Text: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad vanced Stepped Electrode Transistor SET structure with
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NEX2300
NEX2300
NEX2301
NEX2302
NEX2303
NEX230365
NEX230187
NEX230265
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81E TRANSISTOR
Abstract: 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475 NEM080481-12 NEM081081-12
Text: NEC/ CALIFORNIA NEC SbE ]> • b4B7414 0002552 22b — CLASS C, 800-960 MHz, 12 VOLT POWER TRANSISTOR INECC \ ' Z Z -I s NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE: 13.5 V NEC’s NEM0800 series of NPN epitaxial UHF power
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b427414
0002SS2
NEM080481-12
NEM081081-12
NEM082081B-12
NEM084081B-12
NEM0800
NEM080481E-12
NEM081081E-12
81E TRANSISTOR
2SC3282
2SC3282A
NEC J 302
2SC3283A
2SC3283
J349
J475
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2SC2558
Abstract: 2SC2558K 2SC2559K ne0800 2SC2850K 2SC2850 2SC2559 bM274m NE080190 NE080490
Text: NEC/ NEC b M 2 7 4 m GQOESa6! ÔTS » N E C C 5bE D CALIFORNIA CLASS C, 860 MHz, 12 VOLT POWER TRANSISTOR NE0800-12 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE Vcc = 13.5 V NEC’s NE0800 series of NPN epitaxial UHF power transistors
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bM274m
NE0800-12
NE0800
DG0E54E
NE0801
NE0804
NE0810
NE080190
2SC2558
2SC2558K
2SC2559K
2SC2850K
2SC2850
2SC2559
NE080490
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2sc1275
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC1927 is an NPN silicon epitaxial dual transistor that
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2SC1927
2SC1927
2SC1275,
2sc1275
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. Description /¿PC4081 J-FET INPUT OPERATIONAL AMPLIFIER Pin Configuration TheAiPC4081 is a single operational amplifier with a com bination of matched ion implanted P-channel J-FET inputs with standard bipolar transistor technology. The
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PC4081
TheAiPC4081
/UPC4081
/JPC4081
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A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
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transistor NEC D 587
Abstract: 3181 R33 transistor c 3181
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
transistor NEC D 587
3181 R33
transistor c 3181
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transistor NEC D 822 P
Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
transistor NEC D 822 P
NEC D 986
transistor NEC B 617
transistor NEC D 587
r44 marking
transistor D 2624
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transistor NEC D 822 P
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
transistor NEC D 822 P
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transistor D 2588
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4092 is an NPN silicon epitaxial transistor designed for low- Units: mm noise amplifier at VHF, UHF band.
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2SC4092
2SC4092
transistor D 2588
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Untitled
Abstract: No abstract text available
Text: {JPD4216405 4M x 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief May 1994 Description Pin Configurations The //PD4216405 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 4,194,304 words by 4 bits. A single-transistor dynamic
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uPD4216405
64-ms
JPD4216405
26-Pin
iPD4216405G3-XX
G3-50-7KD
4216405G
3-70-7KD
//PD4216405LA-50
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2SC1449
Abstract: S10ms
Text: NEC SILICON POWER TRANSISTOR ELEC T R O N DEVICE 2SC 1449 AF POWER AMPLIFIER AND RF POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC1449 is an NPN general purpose transistor designed for use in audio and radio frequency power amplifiers.
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2SC1449
2SC1449
S10ms
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Untitled
Abstract: No abstract text available
Text: {IPD4216805 2M x 8-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief April 1994 Description Pin Configurations The ¿¿PD4216805 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 2,097,152 words by 8 bits. A single-transistor dynamic
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uPD4216805
28-Pin
nPD4216805G5-XX
PD4216805
64-ms
6805G5-50-7JD
/PD4216805G5-60-7JD
//PD4216805G5-70
pPD4216805G5-50-7KD
iPD4216805G5-60-7KD
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92-0151
Abstract: 2SB744 2SB744 nec 2SD794 TI31 S405A 2SB744A 2SD794A T460 1444A
Text: NEC NEC NEC C om plem entary Pair T ransistor Series f 2SB744,744A/2SD794,794A PN P/N PN Silicon Epitaxial Transistor Audio Frequency Power Amplifier o m h & 1 ]5 ü w « t /•’; is - o u t f f l r K7>r - r ^ u j a i T- *> »>, o / J^ ífí, Í2 ( R, = 8
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2SB744
44A/2SD794
2SB744A
2SD794
2SD794A
i0942
92-0151
2SB744 nec
TI31
S405A
T460
1444A
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2SC2150
Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Text: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use
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bM27M14
QQQE40b
NE57800
NE57807
NE57835
NE57800
NE578
2SC2150
NE57835
NE578 nec
2SC215
NE AND micro-X
transistor NEC ka 42
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NE64800
Abstract: No abstract text available
Text: NEC/ CALIFORNIA NEC SbE D b4S74m 0D02433 4^3 K-BAND BIPOLAR OSCILLATOR TRANSISTOR • NE64800 OUTLINE DIMENSIONS FEATURES NECC Units in jjm NE64800 (CHIP) • FUNDAMENTAL OSCILLATIO N GREATER THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER M IL-SPEC TEMP RANGES
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b4S74m
0D02433
NE64800
NE64800
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k1498
Abstract: APPLICATION NOTE TEA-1035
Text: DATA SHEET T NEC , - • - MOS FIELD EFFECT POWER TRANSISTOR 2SK1497/2SK1498 à SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1497/2SK1498 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in millimeters
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2SK1497/2SK1498
IEI-1209)
k1498
APPLICATION NOTE TEA-1035
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2SC1275
Abstract: 2SC1926
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1926 is an NPN silicon epitaxial dual transistor that in millimeters
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2SC1926
2SC1926
2SC1275,
2SC1275
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2SA1400
Abstract: 2SA1400-Z 2SC3588-Z MEI-1202
Text: DATA SHEET NEC , SILICON TRANSISTOR ' I 2SA1400-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 _ _ DESCRIPTION 2SA1400-Z is designed for High Voltage Switching, especially PACKAGE DIMENSIONS in m illim eters in Hybrid Integrated Circuits. FEATURES
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2SA1400-Z
2SA1400-Z
2SC3588-Z
IEI-1209)
2SA1400
2SC3588-Z
MEI-1202
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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