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    TRANSISTOR NPN A 1930 Search Results

    TRANSISTOR NPN A 1930 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3046 Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN A 1930 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 Q025T4E ObS M A R X Philips Semiconductors N AUER PHILIPS/DISCRETE Product specification b?E D NPN switching transistor PMST4401 PIN CONFIGURATION FEATURES • S-mini package • High current. DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT323


    OCR Scan     		bbS3T31 Q025T4E PMST4401 OT323 PDF

    S100 NPN Transistor

    Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503
    Text: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF


    OCR Scan     		fl23SbOS 00Q4507 Q62702-F574 S100 NPN Transistor BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503 PDF

    S100 NPN Transistor

    Abstract: No abstract text available
    Text: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 .


    OCR Scan     		GGQ4507 E--08 S100 NPN Transistor PDF

    PH192

    Abstract: PH1920-45 27J5
    Text: PH1920-45 Wireless Bipolar Power Transistor 45W, 1930-1990 MHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching


    Original     		PH1920-45 PH192 PH1920-45 27J5 PDF

    transistor j5

    Abstract: ER105 diode j54 PH1920-45 transistor npn a 1930 wacom transistor 930 1/transistor j5
    Text: SE z-z * =g = -= -A = = -r an AMP company Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz PHI 920-45 Features NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PH1920-33 Wireless Bipolar Power Transistor 33W, 1930-1900 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching


    Original     		PH1920-33 PDF

    PH1920-33

    Abstract: No abstract text available
    Text: PH1920-33 Wireless Bipolar Power Transistor 33W, 1930-1900 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching


    Original     		PH1920-33 PH1920-33 PDF

    UPB2060

    Abstract: No abstract text available
    Text: UPB2060 60W PEP, 1.8-2.0 GHz, 26V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB2060 is a high-power COMMON EMITTER bipolar transistor capable of providing 60 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed


    Original     		UPB2060 UPB2060 400mA 491w6 PDF

    UPB1835

    Abstract: TM35W
    Text: UPB1835 35W PEP, 1.8-2.0 GHz, 25V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB1835 is a high-power COMMON EMITTER bipolar transistor capable of providing 35 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed for


    Original     		UPB1835 UPB1835 TM35W PDF

    Untitled

    Abstract: No abstract text available
    Text: Coming Attractions m an A M P com pany Wireless Bipolar Power Transistor, 45W 1930-1990 MHz PH1920-45 V 1.00 Features • • • • • NPN Silicon Power Transistor Com m on Emitter Class AB O peration Internal Input and O u tp u t Im pedance Matching Diffused Emitter Ballasting


    OCR Scan     		PH1920-45 PDF

    19Sg

    Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
    Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.


    Original     		MIL-S-19500/65B 19500/65A 2N388. UIL-S-19500165B 514AD 19Sg WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR PDF

    p2x transistor

    Abstract: transistor marking code p2x PMST4401 bbS3T31
    Text: 0. . e . „ . Philips Semiconductors • bbSB^l 0025^42 DbS M A P X " n AHER P H I L I P S / D I S C R E T E _ . ._ t. Product specification b?E D NPN switching transistor PMST4401 PIN CONFIGURATION FEATURES • S-mini package • High current. DESCRIPTION


    OCR Scan     		PMST4401 OT323 PMST4401 bbS3cl31 p2x transistor transistor marking code p2x bbS3T31 PDF

    J645

    Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor
    Text: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		2010B UPB2010B 30dBc 130mA 100oC 175oC J645 J626 transistor J626 ultrarf UPB2010B J626 Transistor PDF

    J406

    Abstract: TRANSISTOR J406 TRANSISTOR j412 ultrarf UPB2025B J245
    Text: URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-50 UPB2025B 25W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		2025B UPB2025B 30dBc 250mA 100oC 175oC J406 TRANSISTOR J406 TRANSISTOR j412 ultrarf UPB2025B J245 PDF

    transistor 33w

    Abstract: 33w NPN
    Text: m an A M P com pany Wireless Bipolar Power Transistor, 33W 1930-1990 MHz Features PH1920-33 .744 18,90 -.560(14.22)- - • • • • • NPN Silicon M icrow ave P o w er T ran sisto r C o m m o n Km itter C lass AB O peratio n Intern al Inpu t and O utput Im p ed an ce M atching


    OCR Scan     		PH1920-33 1N4245 transistor 33w 33w NPN PDF

    358 SMD transistor

    Abstract: smd capacitor philips philips ceramic capacitors smd smd resistor philips 1206 capacitor SMD PHILIPS CERAMIC CAPACITOR SMD PHILIPS transistor SMD DK philips smd 1206 resistor AN98026 SMD Transistor 6f
    Text: APPLICATION NOTE 30 W class-AB amplifier with the BLV2045 for 1930 − 1990 MHz PCS AN98023 Philips Semiconductors 30 W class-AB amplifier with the BLV2045 for 1930 − 1990 MHz (PCS) CONTENTS 1 INTRODUCTION 2 CIRCUIT DESCRIPTION 3 DC BIAS CIRCUIT 4 RF MEASUREMENT RESULTS


    Original     		BLV2045 AN98023 BLV2045, OT390 SCA57 358 SMD transistor smd capacitor philips philips ceramic capacitors smd smd resistor philips 1206 capacitor SMD PHILIPS CERAMIC CAPACITOR SMD PHILIPS transistor SMD DK philips smd 1206 resistor AN98026 SMD Transistor 6f PDF

    SMD DIODE gp 817

    Abstract: smd resistor philips 1206 smd capacitor philips transistor SMD DK philips ceramic capacitors smd SMD Transistor 6f philips smd 1206 resistor SMD TRANSISTOR L6 philips smd 1206 BEP SMD ZENER
    Text: APPLICATION NOTE 15 W class-AB amplifier with the BLV2044 for 1930 − 1990 MHz PCS AN98022 Philips Semiconductors 15 W class-AB amplifier with the BLV2044 for 1930 − 1990 MHz (PCS) CONTENTS 1 INTRODUCTION 2 CIRCUIT DESCRIPTION 3 DC BIAS CIRCUIT 4 RF MEASUREMENT RESULTS


    Original     		BLV2044 AN98022 BLV2044, OT437 SCA57 SMD DIODE gp 817 smd resistor philips 1206 smd capacitor philips transistor SMD DK philips ceramic capacitors smd SMD Transistor 6f philips smd 1206 resistor SMD TRANSISTOR L6 philips smd 1206 BEP SMD ZENER PDF

    Di 762 transistor

    Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
    Text: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System


    Original     		PH1920-33 lN4245 73050258-S Di 762 transistor transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33 PDF

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: transistor smd marking CODE Wb BFG591 Application Notes toshiba smd marking code transistor diode varicap BB 112 sot323 transistor marking MOTOROLA walkie-talkie transceiver diagram 113 marking code transistor ROHM smd transistor marking A3 sot23 3pin BFG135 amplifier
    Text: th 1 ed ition 10 th th RF manual 10 edition Application and design manual for RF products September 2007 Introduction Welcome to this very special edition of the RF manual. This is our 10th issue – definitely an occasion for celebration! Over the years, the RF manual has become


    Original     		PDF

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model
    Text: RF Manual 9th edition Application and design manual for RF products November 2006 date of release: November 2006 document order number: 9397 750 15817 Henk Roelofs,Vice President & General Manager RF Products Introduction We are excited to introduce the first issue of the RF Manual under our new


    Original     		November2006 2006NXPB Motorola transistor smd marking codes MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model PDF

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF