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    TRANSISTOR NPN C124 Search Results

    TRANSISTOR NPN C124 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN C124 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C1685 transistor

    Abstract: C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor
    Text: QUALITY TECHNOLOGIES VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z T The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor in a standard plastic


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    H11A1 H11A1Z E50151 C2090 C1683 C1684 C1685 C1296A C1685 transistor C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor PDF

    NPN general purpose silicon transistors

    Abstract: Transistors General UMZ1N transistor 526 c114e 2SC411K transistors C124E dual npn 500ma 581 PNP
    Text: Transistors FMC6A IMD1A 94S-830-AC115E (96-458-AC124T) 575 Transistors IMD10A (96-555-IMD10) 582 Transistors IMD16A (96-473-IMD16) 583 Transistors IMD8A IMD9A (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors)


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    94S-830-AC115E) 96-458-AC124T) IMD10A 96-555-IMD10) IMD16A 96-473-IMD16) 94S-902-AC144T) 94S-904-AC114Y) 2SA1036K 2SC411K NPN general purpose silicon transistors Transistors General UMZ1N transistor 526 c114e transistors C124E dual npn 500ma 581 PNP PDF

    a4w SD transistor

    Abstract: transistor PNP C124 diode a4W a4w transistor H7CX-AUD1 transistor NPN c115 omron h7cx C-107 C-118 H7CX-A114D1
    Text: Multifunction Preset Counter H7CX Counters • Highly visible display with backlit negative transmissive LCD. • Programmable PV color to visually alert when output status changes screw terminal block models . • Intuitive setting enabled using ergonomic up/down digit keys (4digit models) and DIP switch.


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    NEMA4/IP66 /10kh= C-129 a4w SD transistor transistor PNP C124 diode a4W a4w transistor H7CX-AUD1 transistor NPN c115 omron h7cx C-107 C-118 H7CX-A114D1 PDF

    C124E

    Abstract: C124* transistor transistor 526 UMD2N DTC124E Transistors General DTA124E transistor 0103
    Text: Transistors General purpose dual digital transistors UMD2N / IMD2A FFeatures 1) Both the DTA124E chip and DTC124E chip in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.


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    DTA124E DTC124E 6-460-A/C124E) C124E C124* transistor transistor 526 UMD2N Transistors General transistor 0103 PDF

    CA6V

    Abstract: audio taper potentiometer 100k cts capacitor 470uf 25v 470uF/ 25V capacitor 10K CA6V CR0805-10W-1001FT C144 DIGITAL NPN TRANSISTOR AKM4114 transistor SOT23 PJ6 AFM2
    Text: Freescale Semiconductor Users Guide DSPAUDIOEVM Users Guide This document contains information on a new product. Specifications and information herein are subject to change without notice. Freescale Semiconductor, Inc., 2004. All rights reserved. DSPAUDIOEVMUG


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    22KQ

    Abstract: No abstract text available
    Text: Transistors Digital Transistor Isolated Dual Digital Transistors UMD2N / IMD2A •E x te rn a l dimensions (Units: mm) UMD2N 2.0±0.2 2.9±0.2 1.3±0.1 0.7 C i t tîli3)[îl(2)[t1(1) +0.1 0.15±0.05 I 0.3-1,0.05 All terminals have same dimensions ^= D = l


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    SC-74 SC-88 -200ii -50m-100m 00171flg 22KQ PDF

    CA6V

    Abstract: transistor SOT23 PJ6 AFM2 capacitor 470uf 25v 10K CA6V MOTOROLA DSP563XX architecture 5075BR subwoofer motherboard CR0805 DSPAUDIOEVMMB1
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSPAUDIOEVM Evaluation Board User’s Manual Order Number: DSPAUDEVMEBUM/D Revision 1, January 2003 This document contains information on a new product under development by Motorola. Motorola reserves the right to change or discontinue this product without notice.


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    transistor NPN C124

    Abstract: transisTOR C124 c124 transistor transistor PNP C124 c124 npn 50E3 C201 C202 C203 C205
    Text: * OPA660X2 = MDB + MDT + MBC OPERATIONAL TRANSCONDUCTANCE AMPLIFIER * AND BUFFER COMPLEX MACROMODEL VERSION * CREATED 8/92 KL * REV.A * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


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    OPA660X2 272E-3 67E-3 248E-20 040E-18 683E-3 029E-12 017E-12 050E-12 80E-12 transistor NPN C124 transisTOR C124 c124 transistor transistor PNP C124 c124 npn 50E3 C201 C202 C203 C205 PDF

    c124 npn

    Abstract: transistor NPN C124 OPA623X2 transisTOR C124 c124 transistor C121 C124 C202 C203 C206
    Text: * OPA623X2 WIDE BANDWIDTH, CURRENT FEEDBACK, MACROMODEL, COMPLEX VERSION * * CREATED 8/92 KL * REV.B 7/9/93 BCB : CLARIFICATION OF NODE SET INSTRUCTIONS * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


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    OPA623X2 029E-12 017E-12 050E-12 80E-12 00E-12 1567E-16 272E-3 67E-3 248E-20 c124 npn transistor NPN C124 transisTOR C124 c124 transistor C121 C124 C202 C203 C206 PDF

    c124 npn

    Abstract: transistor NPN C124 TRANSISTOR BC 1366 c124 transistor C2099 transistor c124 C203 C204 C208 C209
    Text: * OPA622X2 WIDE-BANDWIDTH OPERATIONAL AMPLIFIER MACROMODEL COMPLEX VERSION * * CREATED 8/92 BY KL * REV.B 7/9/93 BCB : CLARIFICATION OF NODE SET INSTRUCTIONS * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


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    OPA622X2 029E-12 017E-12 050E-12 80E-12 00E-12 1567E-16 272E-3 67E-3 248E-20 c124 npn transistor NPN C124 TRANSISTOR BC 1366 c124 transistor C2099 transistor c124 C203 C204 C208 C209 PDF

    c125t

    Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
    Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-


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    DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA 005-Lr DTA114TUA DTC343TS -50mA, f-100MHz 50/1A rat10 C343T) c125t Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK PDF

    Untitled

    Abstract: No abstract text available
    Text: E O TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS H11A1 DESCRIPTION PACKAGE DIMENSIONS 1 The H11A1 is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from specially grown gallium arsenide is selectively coupled


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    H11A1 H11A1 E90700 C1684 C1683 C1296A C1685 C1294 PDF

    c1251

    Abstract: C1336 C1240 diode C1109 C1240 C1321 C1322 C1324 MCT276 S555
    Text: DESIGNER SERIES MCT276 Monsanto PHOTOTRANSISTOR OPTOISOLATORS FEATURE SPECIFICATIONS DESCRIPTION • Highest speed discrete phototransistor optoisolator The MCT276 is a phototransistor-type optically coupled isolator. An infrared emitting diode manu­ factured from specially grown gallium arsenide is selec­


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    MCT276 E50151 MCT276 Cto150Â c1251 C1336 C1240 diode C1109 C1240 C1321 C1322 C1324 S555 PDF

    C1318 transistor

    Abstract: c1318 C1317 transistor c1317 transistor C1318 c1316 c1251 transistor c1317 c1316 c C1330
    Text: r DESIGNER SERIES MCT275 Monsanto PHOTOTRANSISTOR OPTOISOLATORS FEATURE SPECIFICATIONS DESCRIPTION • High voltage output — 80 volts, BVCeo The MCT275 is a phototransistor-type optically coupled isolator. An infrared emitting diode manu­ factured from specially grown gallium arsenide is selec­


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    MCT275 E50151 MCT275 Cto150Â C1318 transistor c1318 C1317 transistor c1317 transistor C1318 c1316 c1251 transistor c1317 c1316 c C1330 PDF

    transistor C1312

    Abstract: c1312 c1251 c1312 transistor C1309 C1310 transistor C128 C1109 C1240 C1285
    Text: Monsanto DESIGNER SERIES MCT274 PHOTOTRANSISTOR OPTOISOLATORS L F E A T U R E S P E C IF IC A T IO N S D E S C R IP T IO N • Controlled Current Transfer R atio — 225% to 400% specified conditions • Maxim um Turn-on tim e — 25 /¿seconds (specified condition)


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    MCT274 E50151 MCT274 transistor C1312 c1312 c1251 c1312 transistor C1309 C1310 transistor C128 C1109 C1240 C1285 PDF

    transistor KJJ

    Abstract: C-1248 C1243 C1248 C1250 C2079 MCT210 Phototransistor with base emitter CI242 C1256
    Text: I5 Q PHOTOTRANSISTOR OPTOCOUPLER IPTOELEtTHIIICS MCT 210 DESCRIPTION PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.


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    MCT210 MCT210 MCT210â E90700) C1256 transistor KJJ C-1248 C1243 C1248 C1250 C2079 Phototransistor with base emitter CI242 C1256 PDF

    130001 power transistor

    Abstract: fet D412 D400 npn transistor q406 transistor C495 transistor FBL-00 q902 transistor TRANSISTOR D412 1L400 TRANSISTOR D400
    Text: Pi Factors Report Page 1 of 63 SortBy: PartType/PN/RefDes Date: 4/5/2007 2:00 PM RelCalc for Windows, Version 5.0-BELL6 Release 2000.1 Company: Lambda Americas DOC: LZSA1000.CIR RECORDS: 321 DESCRIPTION: LZSA1000 ENV: GB TEMP: 40.00 C CF: 1.00000 MODEL: Serial


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    LZSA1000 LZSA1000 SFBT000054 -------------------------------SHKA171285 -------------------------------SHKA171286 130001 power transistor fet D412 D400 npn transistor q406 transistor C495 transistor FBL-00 q902 transistor TRANSISTOR D412 1L400 TRANSISTOR D400 PDF

    FBT-00

    Abstract: D400 npn transistor FBL-00 D400 npn Q413 1L400 D425 fbnl TRANSISTOR J406 D413
    Text: Pi Factors Report Page 1 of 62 SortBy: PartType/PN/RefDes Date: 1/9/2006 11:20 AM RelCalc for Windows, Version 5.0-BELL6 Release 2000.1 Company: Your Company Name Here DOC: LZSA500_P1.CIR RECORDS: 316 DESCRIPTION: LZSA500 ENV: GB TEMP: 40.00 C CF: 1.00000


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    LZSA500 LZSA500 SFBT000054 -------------------------------SHKA171285 -------------------------------SHKA171286 FBT-00 D400 npn transistor FBL-00 D400 npn Q413 1L400 D425 fbnl TRANSISTOR J406 D413 PDF

    c1247

    Abstract: C1246 c1252 MCT210 Phototransistor with base emitter CI242
    Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 DESCRIPTION PACKAGE DIMENSIONS j Sl ì u The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.


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    MCT210 ST1603A c2079 MCT210 MCT210-Specified E90700) 10TTI c1247 C1246 c1252 Phototransistor with base emitter CI242 PDF

    transistor L43 SMD

    Abstract: transistor NPN C124 samsung u2 cable smd diode L43 c124 npn transistor SMD t06 47 transistor SMD t08 transistor SMD t07 transistor t07 DIODE C136
    Text: This Document can not be used without Samsung’s authorization. 6 Docking Exploded View and Parts List 6-1 UNIT_DOCK_BOTTOM_ASSY Sens Q 20 6-1 6 Docking Exploded View and Parts List NO 6-2 PART NAME This Document can not be used without Samsung’s authorization.


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    BA61-00728A BA66-00044A BA66-00043A BA72-00679A BA72-00678A BA72-00663A BA72-00662A PGB0010603MR 100PF 220PF transistor L43 SMD transistor NPN C124 samsung u2 cable smd diode L43 c124 npn transistor SMD t06 47 transistor SMD t08 transistor SMD t07 transistor t07 DIODE C136 PDF

    SMD Transistor t08

    Abstract: transistor SMD t07 transistor NPN C124 transistor SMD t06 transistor L43 SMD transistor SMD t08 transistor SMD t06 47 SMD TRANSISTOR l38 transistor NPN c115 transistor SMD t06 19
    Text: This Document can not be used without Samsung’s authorization. 6 Docking Exploded View and Parts List 6-1 UNIT_DOCK_BOTTOM_ASSY Sens Q 25 6-1 6 Docking Exploded View and Parts List NO 6-2 PART NAME This Document can not be used without Samsung’s authorization.


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    BA61-00728A BA66-00044A BA66-00043A BA72-00679A BA72-00678A BA72-00663A BA72-00662A PGB0010603MR 100PF 220PF SMD Transistor t08 transistor SMD t07 transistor NPN C124 transistor SMD t06 transistor L43 SMD transistor SMD t08 transistor SMD t06 47 SMD TRANSISTOR l38 transistor NPN c115 transistor SMD t06 19 PDF

    Untitled

    Abstract: No abstract text available
    Text: E DUAL 1 I PHOTOTRANSISTOR OPTOCOUPLERS -1 U OPTOELECTRONICS MCT6 MCT62 MCT61 PACKAGE DIMENSIONS ft F ft & DESCRIPTION The MCT6X optoisolators have two channels for high density applications. For four channel applications, two-packages fit into a standard 16-pin DIP socket. Each


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    MCT62 MCT61 16-pin E50151 74bbfl51 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 PACKAGE DIMENSIONS DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.


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    MCT210 MCT210 MCT210â E90700) 74bbfl51 000bl23 D00L124 PDF

    Untitled

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT277 PACKAGE DIMENSIONS DESCRIPTION! The MCT277 ¡s a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


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    MCT277 E50151 C1686 C1679 C1243 PDF