TRANSISTOR NPN FOR 12 V Search Results

TRANSISTOR NPN FOR 12 V Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

TRANSISTOR NPN FOR 12 V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UNA0235 Abstract: UN235 Text: Small Signal Transistor Arrays UNA0235 Silicon PNP epitaxial planar transistor 3 elements Silicon NPN epitaxial planar transistor (3 elements) Unit: mm For motor drives For small motor drive circuits in general 12° 12 3 NPN Overall 0.8 1.5±0.1 1.5+0.2	Original	UNA0235 UNA0235 UN235	PDF
VHB100-12 Abstract: ASI10719 Text: VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is a Class-C, 12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF, FM communication, Diffused ballast resistor gives it high VSWR capability, good gain & efficiency over the 136175 MHz band.	Original	VHB100-12 VHB100-12 ASI10719	PDF
BUV21 Abstract: No abstract text available Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A	Original	BUV21 r14525 BUV21/D BUV21	PDF
BU108 Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A	Original	BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277	PDF
Untitled Abstract: No abstract text available Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A	Original	BUV21	PDF
UNA0233 Abstract: UN233 TRANSISTOR 1502 npn Text: Small Signal Transistor Arrays UNA0233 Silicon PNP epitaxial planar transistor 3 elements Silicon NPN epitaxial planar transistor (3 elements) Unit: mm For motor drives 12 3 • Absolute Maximum Ratings Ta = 25°C PNP NPN Overall 0.5 4 5 6 7 0.9±0.1 Symbol	Original	UNA0233 15ues, UNA0233 UN233 TRANSISTOR 1502 npn	PDF
2SC5180 Abstract: 2SC5180-T1 t84 marking PU10517EJ01V0DS Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • Low current consumption and high gain 2 S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz	Original	2SC5180 S21e2 2SC5180-T1 2SC5180 2SC5180-T1 t84 marking PU10517EJ01V0DS	PDF
HF100-12 Abstract: ASI10599 Text: HF100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI HF100-12 is a 12.5 V ClassC epitaxial planar transistor designed primarily for HF communications. This device utilizes state of the art diffused Emitter Ballasting to achieve extreme	Original	HF100-12 HF100-12 112x45° ASI10599	PDF
Siemens 1736 Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312 Text: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for	OCR Scan	0235bG5 Q004312 BCY66 Q60203-Y66 TcaseS45Â fi23Sb05 Q0QM31? 120Hz Siemens 1736 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312	PDF
MM1505 Abstract: No abstract text available Text: MM1505 silicon NPN SILICON SWITCHING TRANSISTOR . designed plications. primarily for high-speed, saturated NPN SILICON SWITCHING TRANSISTOR switching ap • High Speed Switching Times @ I q = 10 m Adc — ton < 12 ns (Max) toff < 12 ns (Max) « M A X IM U M R A T IN G S	OCR Scan	MM1505 MM1505	PDF
Untitled Abstract: No abstract text available Text: Small Signal Transistor Arrays UNA0235 Silicon PNP epitaxial planar type 3 elements Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives For small motor drive circuits in general 12° 12 3 NPN Overall 0.8 1.5±0.1 1.5+0.2 –0.1 6.5±0.3	Original	UNA0235	PDF
0930 IC Abstract: No abstract text available Text: PTB 20239 12 Watts, 1465–1513 MHz Cellular Radio RF Power Transistor Description The PTB 20239 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 12 watts minimum output power, it may be used for both CW	Original	1-877-GOLDMOS 1301-PTB 0930 IC	PDF
B12-12 Abstract: 2N5590 B1212 MT-72 MT-72 package 32fl02 Text: GAE GREAT AMERICAN ELECTROINCS 2N5590/B12-12 Silicon NPN power VHF transistor 2N5590/B12-12 is designed for amplifier, frequency multipliers and oscillator applications in industrial and commercial equipment. Especially suited for AM/FM land and mobile operation.	OCR Scan	2N5590/B12-12 2N5590/B12-12 MT-72 32fl02Â 0000DQ2 B12-12 2N5590 B1212 MT-72 package 32fl02	PDF
transistor j13009-2 Abstract: J13009-2 j13009 2 FJP13009 Text: FJP13009 High-Voltage Fast-Switching NPN Power Transistor Features Description • High-Voltage Capability • High Switching Speed The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is	Original	FJP13009 FJP13009 O-220 O-220 FJP13009TU transistor j13009-2 J13009-2 j13009 2	PDF

Germanium Transistor Abstract: Germanium power ON5088,115 Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	ON5088 OT343F JESD625-A Germanium Transistor Germanium power ON5088,115	PDF
BUV26 Abstract: V50B Text: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high–speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS	Original	BUV26 85LLC r14525 BUV26/D BUV26 V50B	PDF
CASE 221A Style 1 Abstract: BUV26 Text: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high−speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS	Original	BUV26 CASE 221A Style 1	PDF
UNA0234 Abstract: UN234 Text: Small Signal Transistor Arrays UNA0234 Silicon PNP epitaxial planar transistor 4 elements Silicon NPN epitaxial planar transistor (4 elements) Unit: mm For motor drives For Small motor drive circuits in general 0.2+0.1 –0.0 12° 0.3±0.1 16 151413121110 9	Original	UNA0234 UNA0234 UN234	PDF
NEC 1357 Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz	Original	2SC5509 2SC5509-T2 NEC 1357 2SC5509 2SC5509-T2 C10535E 487 4PIN	PDF
2SC5015 Abstract: 2SC5015-T1 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 18 FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation	Original	2SC5015 2SC5015-T1 PU10403EJ01V0DS 2SC5015 2SC5015-T1	PDF
2SC5786 Abstract: 2SC5786-T1 marking UE marking 654 3pin nec 1299 662 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz	Original	2SC5786 S21e2 2SC5786-T1 2SC5786 2SC5786-T1 marking UE marking 654 3pin nec 1299 662	PDF
BUV27 Abstract: No abstract text available Text: BUV27 NPN Silicon Power Transistor Designed for use in switching regulators and motor control. Features • Low Collection Emitter Saturation Voltage • Fast Switching Speed http://onsemi.com POWER TRANSISTOR 12 AMPERES 120 VOLTS 70 WATTS MAXIMUM RATINGS	Original	BUV27 r14525 BUV27/D BUV27	PDF
transistor marking MH Abstract: transistor buv27 ic marking code pk transistor marking T2 buv27 Specific Device Code MH Text: BUV27 NPN Silicon Power Transistor Designed for use in switching regulators and motor control. Features • Low Collection Emitter Saturation Voltage • Fast Switching Speed http://onsemi.com POWER TRANSISTOR 12 AMPERES 120 VOLTS 70 WATTS MAXIMUM RATINGS	Original	BUV27 O-220AB transistor marking MH transistor buv27 ic marking code pk transistor marking T2 Specific Device Code MH	PDF
baw 92 Abstract: MPS2369 PP116 Text: MPS2369 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON SWITCHING TRANSISTOR . . . designed for use ¡n high-speed, low-current switching applications. • Low O utp ut Capacity • Fast Switching Time @ lc = 10 mAdc t on =! 12 #is (Max) • High Current*Gain—Bandwidth Product	OCR Scan	MPS2369 12/is baw 92 MPS2369 PP116	PDF

TRANSISTOR NPN FOR 12 V Search Results

TRANSISTOR NPN FOR 12 V Result Highlights (5)

TRANSISTOR NPN FOR 12 V Datasheets Context Search

UNA0235

VHB100-12

BUV21

BU108

Untitled

UNA0233

2SC5180

HF100-12

Siemens 1736

MM1505

Untitled

0930 IC

B12-12

transistor j13009-2

Germanium Transistor

BUV26

CASE 221A Style 1

UNA0234

NEC 1357

2SC5015

2SC5786

BUV27

transistor marking MH

baw 92