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    TRANSISTOR NPN HIGH SPEED SWITCHING 5A 600V Search Results

    TRANSISTOR NPN HIGH SPEED SWITCHING 5A 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    TRANSISTOR NPN HIGH SPEED SWITCHING 5A 600V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC3831

    Abstract: vbe 12v, vce 600v NPN Transistor transistor npn 12V 1A Collector Current
    Text: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor VCB=600V VCEO 500 V IEBO VEB=10V 10 V V(BR)CEO 10(Pulse20) A hFE mA 100max µA IC=25mA 500min V VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max


    Original     		2SC3831 Pulse20) 100max 500min 105typ MT-100 2SC3831 vbe 12v, vce 600v NPN Transistor transistor npn 12V 1A Collector Current PDF

    vbe 12v, vce 600v NPN Transistor

    Abstract: 2SC3831
    Text: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max


    Original     		2SC3831 Pulse20) 100max 500min 105typ MT-100 vbe 12v, vce 600v NPN Transistor 2SC3831 PDF

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA PDF

    transistor npn high speed switching 5A 600v

    Abstract: NPN Transistor 1.5A 600V BUV70 NPN Transistor 600V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV70 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 600V (Min) ·High Power Dissipation ·Fast Switching Speed APPLICATIONS ·Designed for motor controls, switching mode power


    Original     		BUV70 14aturation transistor npn high speed switching 5A 600v NPN Transistor 1.5A 600V BUV70 NPN Transistor 600V PDF

    P-Channel IGBT

    Abstract: PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion vtom Trench MOSFET Termination Structure
    Text: Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction. 2. Device structure and operation .


    Original     		PDF

    relay 12v 500 ohm

    Abstract: zhrv3 1.1kw 3phase 220v
    Text: SENSORS, PROCESS & MEASUREMENT Short Form Catalogue 2014 I 2015 www.acdc.co.za CONTENTS DIN Rail Mount Voltage Monitors Power Monitors SP-100/SP-103: Current Monitor, Single Phase SP-101/SP-104: Current Monitor, Single Phase SP-120/SP-123: Current Window Comparator, Single Phase


    Original     		SP-100/SP-103: SP-101/SP-104: SP-120/SP-123: SP-121: SP-200/SP-201: SP-220/SP-221: AP-221: AP-224: SP-230/SP-231/SP-232: AP-231/AP-232: relay 12v 500 ohm zhrv3 1.1kw 3phase 220v PDF

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E PDF

    C3679 equivalent

    Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
    Text: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.


    Original     		T01EE0 H1-T01EE0-0107020SB C3679 equivalent transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220 PDF

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


    OCR Scan     		Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier PDF

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493 PDF

    MG75G2YL1A

    Abstract: 1-B215
    Text: MG75G2YL1A GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current: Gain : hf,E=80 Min. (Ic=7 5A)


    OCR Scan     		MG75G2YL1A MG75G2YL1A 1-B215 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2676 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		NTE2676 100mA, 75kHz PDF

    c5287 equivalent transistor

    Abstract: transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		2SA1693 2SA1694 2SA1695 2SA1725 2SA1907 2SA1908 2SA1909 2SC3179 2SC3852 2SC4511 c5287 equivalent transistor transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent PDF

    BUL63A

    Abstract: transistor npn high speed switching 5A 600v ic 546
    Text: SEME BUL63A LAB MECHANICAL DATA Dimensions in mm 2.18 0.086 2.44 (0.096) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051)


    Original     		BUL63A BUL63A transistor npn high speed switching 5A 600v ic 546 PDF

    2N5552

    Abstract: PT-3526 IC 3526 powertech
    Text: GD0D3E1 7 1?E D "BIG IDEAS IN BIG POWER” • PowerTecn POIdERTECH INC 40 AMPERES PT-3526 T - l ^ - l S HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V cE sat . 0.5V @20A h p E . 5 min. @40A V b E . 1.5V @20A


    OCR Scan     		PT-352Ã 150PC 2N5552 2N5552 PT-3526 IC 3526 powertech PDF

    ISO ultrasonic sensor standards symbols

    Abstract: automatic brake failure indicator and engine heating alarm ir remote control ROBOt project report omron plc CQM1H CPU 51 dip switch selection project report on pick and place robot simple pick and place robotic arm cylindrical robot arm omron hmi ccs c pt100 DRT2-MD32ML
    Text: Industrial Automation Products SB IAMSG-4 2005 OmronElectronics LLC Printed in the U.S.A. 1/05/30M, 10M Master Selection Guide PHOTOELECTRIC SENSORS AMPLIFIED PHOTOMICROSENSORS PROXIMITY SENSORS LIMIT SWITCHES OTHER SENSOR SOLUTIONS PUSHBUTTONS, SWITCHES AND PILOT


    Original     		iF-06 P7LF-06 P7LF-06 PFP-100N PFP-50N 1/05/30M, ISO ultrasonic sensor standards symbols automatic brake failure indicator and engine heating alarm ir remote control ROBOt project report omron plc CQM1H CPU 51 dip switch selection project report on pick and place robot simple pick and place robotic arm cylindrical robot arm omron hmi ccs c pt100 DRT2-MD32ML PDF

    powertech

    Abstract: 2N5552 PT-3516 PT3516 TG-63
    Text: 4 1?E. D 7 2 iû ? t.M GODOBn ^ “BIG IDEAS IN BIG POWER” ^11— • PowerTech POlüERTECH IN C SO AMPERES PT-351Ó T - Î3 - 1 6 HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.5 @ 10A h p E .


    OCR Scan     		PT-351Ã 5/16-S4UNF-2A TG-63 2N5552 powertech 2N5552 PT-3516 PT3516 TG-63 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN3793 2SC4440 No.3793 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Deflnition Monochrome Display Horizontal Deflection Output Applications F e a tu re s • High reliability Adoption of HVP process . • F ast switching speed.


    OCR Scan     		EN3793 2SC4440 T0220M 11195TS PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3793 NPN Triple Diffused Planar Silicon Transistor 2SC4440 Ultrahigh-Definition Monochrome Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast switching speed.


    Original     		EN3793 2SC4440 2SC4440] O-220ML PDF

    Untitled

    Abstract: No abstract text available
    Text: “BIG IDEAS IN BIG POWER ” • ■ ■ PowerTech ■ 40 AMPERES PT-3526 HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.5V @ 20A h p E . 5 m in. @ 4 0 A I s / B .


    OCR Scan     		PT-3526 300jusec 100/iA PDF

    d2396

    Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
    Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .


    OCR Scan     		2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460 PDF

    hj80

    Abstract: MG75G6EL9
    Text: MG75G6EL9 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH P O W E R S W I T C H I N G APPLICATIONS. M O T O R C O N TROL APPLICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode.


    OCR Scan     		MG75G6EL9 hj80 MG75G6EL9 PDF

    M57962L

    Abstract: IGBT DRIVER SCHEMATIC chip M57959L IGBT DRIVER SCHEMATIC M57962L MITSUBISHI HYBRID small driver igbt motorola to-220 1N6528 600v 20a IGBT driver IGBT Driver Power Schematic
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING HYBRID GATE DRIVERS AND GATE DRIVE POWER SUPPLIES common mode noise immunity. This feature allows convenient common referencing of high and low side control signals. Mitsubishi IGBT drivers are designed to


    Original     		MJD44H11 MJD45H11 D44VH10 D45VH10 O-220 MJE15030 MJE15031 MJE243 MJE253 M57962L IGBT DRIVER SCHEMATIC chip M57959L IGBT DRIVER SCHEMATIC M57962L MITSUBISHI HYBRID small driver igbt motorola to-220 1N6528 600v 20a IGBT driver IGBT Driver Power Schematic PDF