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    TRANSISTOR NPN VCBO 25V Search Results

    TRANSISTOR NPN VCBO 25V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN VCBO 25V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE69

    Abstract: No abstract text available
    Text: NTE69 Silicon NPN Transistor UHF/VHF Amplifier Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V


    Original     		PDF NTE69 100MHz NTE69

    NTE344

    Abstract: No abstract text available
    Text: NTE344 Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V


    Original     		PDF NTE344 175MHz 100mA, 175MHz, NTE344

    NTE344

    Abstract: No abstract text available
    Text: NTE344 Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V


    Original     		PDF NTE344 175MHz 100mA, 175MHz, NTE344

    Untitled

    Abstract: No abstract text available
    Text: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A


    Original     		PDF -100mA -10mA Mar-97

    IC 386

    Abstract: CB transmitter NTE302
    Text: NTE302 Silicon NPN Transistor AM, CB Transmitter Driver, Switch Description: D 27−MHz AM CB Transmitter Driver Stage Switch Absolute Maximum Ratings: Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE302 27-MHz 100mA -10mA, 10MHz IC 386 CB transmitter NTE302

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KST10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING:3E1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO


    Original     		PDF OT-23 KST10 100MHz

    NTE315

    Abstract: 10MHZ
    Text: NTE315 Silicon NPN Transistor, Medium Power Amp Features: D AF – HF Medium Power Amplifier Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE315 100mA 10MHZ NTE315 10MHZ

    KSP10

    Abstract: KST10
    Text: KST10 KST10 VHF/UHF Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector Base Voltage 30 V VCEO Collector-Emitter Voltage


    Original     		PDF KST10 OT-23 KSP10 KST10

    Untitled

    Abstract: No abstract text available
    Text: KSP10 KSP10 VHF/UHF transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 30 Units V V VCEO Collector-Emitter Voltage


    Original     		PDF KSP10

    ksp10

    Abstract: c 458 c transistor Transistor B C 458
    Text: KSP10 KSP10 VHF/UHF transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO PC PC Parameter Value 30 Units V Collector-Emitter Voltage


    Original     		PDF KSP10 ksp10 c 458 c transistor Transistor B C 458

    KSP10

    Abstract: No abstract text available
    Text: KSP10 KSP10 VHF/UHF transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO PC PC Parameter Value 30 Units V Collector-Emitter Voltage


    Original     		PDF KSP10 KSP10

    KSP10

    Abstract: kst10 silicon KST10
    Text: KST10 KST10 VHF/UHF Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage


    Original     		PDF KST10 OT-23 KSP10 kst10 silicon KST10

    Untitled

    Abstract: No abstract text available
    Text: KST10 KST10 VHF/UHF Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage


    Original     		PDF KST10 OT-23 KSP10 CuKST10MTF

    KSP10

    Abstract: No abstract text available
    Text: KSP10 KSP10 VHF/UHF transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO PC PC Parameter Value 30 Units V Collector-Emitter Voltage


    Original     		PDF KSP10 KSP10

    KSP10

    Abstract: "vhf,uhf transistor"
    Text: KSP10 KSP10 VHF/UHF transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO PC PC Parameter Value 30 Units V Collector-Emitter Voltage


    Original     		PDF KSP10 KSP10 "vhf,uhf transistor"

    JB marking transistor

    Abstract: transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking
    Text: MMBTH10LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 VHF/UHF Transistors ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo


    Original     		PDF MMBTH10LT1 OT-23 100uA 1000MHz JB marking transistor transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage


    Original     		PDF BC337/BC338 BC337 BC338 100uA, 100mA 300mA 500mA,

    2SD1478

    Abstract: 2SD1478A
    Text: Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 Symbol Collector to 2SD1478 base voltage 2SD1478A Collector to 2SD1478 Ratings 30 VCBO


    Original     		PDF 2SD1478, 2SD1478A 2SD1478 omi01 2SD1478 2SD1478A

    2SD1478

    Abstract: 2SD1478A
    Text: Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 Symbol Collector to 2SD1478 base voltage 2SD1478A Collector to 2SD1478 Ratings 30 VCBO


    Original     		PDF 2SD1478, 2SD1478A 2SD1478 2SD1478 2SD1478A

    BC337

    Abstract: BC338 BC338 TRANSISTOR BC337 NPN transistor BC337 hfe BC338-40 TRANSISTOR BC338 BC338-16 bc337 transistor BC-337
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC337/BC338 TRANSISTOR NPN FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE VCBO VCEO Parameter


    Original     		PDF BC337/BC338 BC337 BC338 100uA, 100mA 300mA 500mA, BC337 BC338 BC338 TRANSISTOR BC337 NPN transistor BC337 hfe BC338-40 TRANSISTOR BC338 BC338-16 bc337 transistor BC-337

    2N3393

    Abstract: CON10 MICRO ELECTRONICS ltd transistor
    Text: 2N3393 NPN SILICON TRANSISTOR DESCRIPTION 2N3393 is NPN silicon planar transistor designed as small signal amplifiers. ABSOLUTE MAXIMUM RATINGS VcEO VcBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation


    OCR Scan     		PDF 2N3393 O-92B 100mA 360mW 20MHz Mar-99 CON10 MICRO ELECTRONICS ltd transistor

    Untitled

    Abstract: No abstract text available
    Text: | e BC818 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS at Tan*=25°C Symbol R ating Unit Collector-Base Voltage Vcbo 30 V Collector-Emitter Voltage


    OCR Scan     		PDF BC818 300uSX 100uA 100mA 300mA 500mA 300mA

    Untitled

    Abstract: No abstract text available
    Text: MPSH10 MPSH11 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . ~~ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS at T aniW S X Symbol R ating Unit Collector-Base Voltage Vcbo 30 V Collector-Emitter Voltage


    OCR Scan     		PDF MPSH10 MPSH11 Above25Â 10CMHz

    Untitled

    Abstract: No abstract text available
    Text: KSP5172 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • C ollector-E m itter Voltage: V Ceo = 2 5 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Rating Unit Col lector-Base Voltage VcBO


    OCR Scan     		PDF KSP5172