TRANSISTOR P 10 Search Results

TRANSISTOR P 10 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR P 10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2n6287 Abstract: No abstract text available Text: 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. . Page 1 of 1 Enter Your Part # Home Part Number: 2N6287 Online Store 2N6287 Diodes 20 Transistors A complementary N -P-N and P-N -P monolithic Integrated Circuits darlington power transistor. High voltage rating 100 V	Original	2N6287 2N6287 com/2n6287	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage	Original	MJE13003D-P MJE13003D-P MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K MJE13003DL-P-x-T92-R MJE13003DG-P-xat QW-R201-085	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage	Original	MJE13003D-P MJE13003D-P MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K QW-R201-085	PDF
2N6897 Abstract: TRANSISTOR 18751 DC/EQUIVALENT transistor 18751 Text: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,	Original	2N6897 -100V, -100V 2N6897 2N689ther TRANSISTOR 18751 DC/EQUIVALENT transistor 18751	PDF
Untitled Abstract: No abstract text available Text: MMFTP84 MMFTP84 P-Channel Enhancement Mode Vertical D-MOS Transistor P-Kanal Vertikal D-MOS Transistor - Anreicherungstyp P P Version 2011-01-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type	Original	MMFTP84 MMFTP84 OT-23 O-236) UL94V-0	PDF
2N6897 Abstract: No abstract text available Text: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,	Original	2N6897 -100V, -100V 2N6897 2N689opment.	PDF
2N1046 Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e Text: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an	OCR Scan	2N1046 DC-11 germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e	PDF
8B123 Abstract: 2SB1232 2SD1842 1SB12 Text: \|~Ordering number: EN 3261A 2SB1232/2SD1842 2SB1232 : P N P Epitaxial Planar Silicon Transistor 2SD1842 : N P N Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications Featu res •Large current capacity and wide ASO. •Low saturation voltage.	OCR Scan	2SB1232/2SD1842 2SB1232 2SD1842 00V/40A 8B123 2SB1232 2SD1842 1SB12	PDF
marking 557 SOT143 Abstract: No abstract text available Text: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor	OCR Scan	BCV63 BCV63B OT-143 BCV64. bbS3R31 0Q3M553 marking 557 SOT143	PDF
mcl610 Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601	PDF
MCT8 opto Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35	PDF
Untitled Abstract: No abstract text available Text: BF550 _ SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection application:;. •	OCR Scan	BF550	PDF
Untitled Abstract: No abstract text available Text: NEC PHOTO TRANSISTOR ELECTRON DEVICE PHI 04 PHOTO TRANSISTOR -N E P O C SERIES The PH 104 is a p h o to transistor in a plastic molded package, and PACKAGE DIMENSIONS very suitable fo r a detector o f a ph oto interrupter. in millimeters inches 3.25 (0 1 2 8 )	OCR Scan		PDF
transistor marking T2 Abstract: TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor Text: • ^53^31 GGEMSSM HAPX N AMER PHILIPS/DISCRETE BCV64 BCV64B b7E D SILICON PLANAR TRANSISTOR Double P N-P transistor in a plastic SOT-143 envelope. Intended fo r Schmitt-trigger applications. N-P-N complement is the BCV63. QUICK REFERENCE DATA transistor Collector-emitter voltage open base	OCR Scan	BCV64 BCV64B OT-143 BCV63. DDEU55b transistor marking T2 TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor	PDF

1BW TRANSISTOR Abstract: No abstract text available Text: FF 50 R 10 K 3MÜ32ci7 üDDOllb 03D « U P E C 52E D EUPEC Thermische Eigenschaften Thermal properties DC, pro Baustein /p er module RthJC DC, pro Zweig / per arm pro Baustein /p e r module RthCK pro Zweig/per arm Transistor Transistor Elektrische Eigenschaften	OCR Scan	3MD32CÃ 34D32CI7 1BW TRANSISTOR	PDF
BFG23 Abstract: No abstract text available Text: • bbSBTBl 0017b47 3 ■ N AMER PHILIPS/DISCRETE BFG23 SSE D J V T-3l-i£r P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as MATV and CATV systems, up to 2 GHz.	OCR Scan	0017b47 BFG23 OT-103) BFG91A. BFG23	PDF
transistor 2n Abstract: 3904 Text: _ 2N3904 Small Signal Transistor NPN T O - 2 2 6 A A (TO -9 2 ) 0.181 (4.6) - * 0.142(3.6) «— Features_ • N P N Silicon Epitaxial Pla n ar Transistor for sw itching and am plifier applications. • A s com plem entary type, the P N P transistor	OCR Scan	2N3904 15000kHz 500rr transistor 2n 3904	PDF
Untitled Abstract: No abstract text available Text: PMBT5401 _ J V_ SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor fo r general purposes and especially in telephony applications and encapsulated in a SOT-23 package. QUICK REFERENCE DATA Collector-base voltage open emitter	OCR Scan	PMBT5401 OT-23	PDF
MPSU60 Abstract: MPS-U60 MPSU10 MPS-U10 MPSU60 transistor HB 541 Text: MPS-U60 SILICON PNP SILICON ANNULAR TRANSISTOR PNP SILICON HIGH VOLTAGE TRANSISTOR . . . designed for general-purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance. • Com plem ent to N P N T y p e M PS-U 10	OCR Scan	MPS-U60 MPS-U10 Tc-25Â MPSU60 MPS-U60 MPSU10 MPS-U10 MPSU60 transistor HB 541	PDF
transistor TIP3055 Abstract: No abstract text available Text: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.	OCR Scan	TIP3055 OT-93 TIP2955. 003302b bbS3T31 00350Efl transistor TIP3055	PDF
marking code ER sot 143 Abstract: transistor D95 TRANSISTOR C Text: BCV63 BCV63B SILICON PLANAR TRANSISTOR D ouble N-P-N transistor in a plastic SO T-143 package. Intended fo r S c h m itt trigger applications. P-N-P com p le m e nt is th e BCV64. Q UICK REFERENCE D A T A transistor C o lle c to r-e m itte r voltage open base	OCR Scan	BCV63 BCV63B T-143 BCV64. BCV63B marking code ER sot 143 transistor D95 TRANSISTOR C	PDF
BF550 Abstract: transistor marking code 325 0024-B Text: • bbSBTBi □ □ S 4 b in aaT m a p x N AUER PHILIPS/DISCRETE BF550 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.	OCR Scan	24LMC] BF550 OT-23 BF550 transistor marking code 325 0024-B	PDF
BFG51 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.	OCR Scan	bb53l31 Q017b7i BFG51 OT-103) BFG90A. BFG51	PDF
Micropower Amplifiers Abstract: n-channel mos or gate CA3600 TRANSISTOR N2 TRANSISTOR N3 differential pair transistor mos transistor P3N-3 Text: Arrays Transistor-continued COS/MOS Transistor Array - For Linear Circuit Applications c a 36 oo Applications and Features Terminal 1. Channel High input resistance: 100GS2 typ . Lo w gate-terminal curren t: 10 pA (typ .) Matched p-channel p air: Gate-voltage	OCR Scan	ca36oo 100GS2 2300/imho Micropower Amplifiers n-channel mos or gate CA3600 TRANSISTOR N2 TRANSISTOR N3 differential pair transistor mos transistor P3N-3	PDF

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TRANSISTOR P 10 Search Results

TRANSISTOR P 10 Result Highlights (5)

TRANSISTOR P 10 Datasheets Context Search

2n6287

Untitled

Untitled

2N6897

Untitled

2N6897

2N1046

8B123

marking 557 SOT143

mcl610

MCT8 opto

Untitled

Untitled

transistor marking T2

1BW TRANSISTOR

BFG23

transistor 2n

Untitled

MPSU60

transistor TIP3055

marking code ER sot 143

BF550

BFG51

Micropower Amplifiers