136.21
Abstract: AT42010 AT-42010 S21E
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz
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AT-42010
AT-42010
AT42010
RN/50
5965-8910E
136.21
S21E
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micro-x 420
Abstract: AT-42036 AT-42036-BLK AT-42036-TR1 S21E
Text: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz
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AT-42036
AT-42036
me10/-0
5980-1854E
5988-4735EN
micro-x 420
AT-42036-BLK
AT-42036-TR1
S21E
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PDF
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K1132
Abstract: 2SJ166 2SJ186 2SK1132 T100
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
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2SJ166
2SJ166,
K1132
2SJ166
2SJ186
2SK1132
T100
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PDF
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iso 1207
Abstract: TEA-1035 2SK1596 MEI-1202
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC 1 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1596 SWITCHING N-CHANNEL POWER MOS FET
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2SK1596
2SK1596
IEI-1209)
iso 1207
TEA-1035
MEI-1202
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PDF
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Untitled
Abstract: No abstract text available
Text: Notice; You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1524 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION
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uPA1524
1524isN
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Untitled
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET A MOS FIELD EFFECT POWER TRANSISTOR 2SK1992/2SK1993 SWITCHING N-CHANIMEL POWER MOS FET
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2SK1992/2SK1993
2SK1992/2SK1993
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PDF
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CD3002
Abstract: 2SK1664 MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1664 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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2SK1664
2SK1664
IEI-1209)
CD3002
MEI-1202
TEA-1035
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PDF
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2SK1990
Abstract: 2SK1991 MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1990/2SK1991 SWITCHING N-CHANNEL POWER MOS FET
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2SK1990/2SK1991
2SK1990/2SK1991
IEI-1209)
2SK1990
2SK1991
MEI-1202
TEA-1035
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PDF
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2sk1760
Abstract: MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT POWER TRANSISTOR 2SK1760 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION
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2SK1760
2SK1760
IEI-1209)
MEI-1202
TEA-1035
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PDF
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nec 7912
Abstract: TC-7912 2SK1988 2SK1989 MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1988, 1989 SWITCHING N-CHANNEL POWER MOS FET
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2SK1988,
2SK1988
2SK1989
nec 7912
TC-7912
MEI-1202
TEA-1035
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PDF
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ITT DIODE tv
Abstract: 2SK1491 MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC 1N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1491 SWITCHING N-CHANNEL POWER MOS FET
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2SK1491
2SK1491
ITT DIODE tv
MEI-1202
TEA-1035
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PDF
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2SK1122
Abstract: TEA-1035 MEI-1202 tf155
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET ÆÊ^BBS. NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1122 SWITCHING N-CHANIMEL POWER MOS FET
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2SK1122
2SK1122
IEI-1209)
TEA-1035
MEI-1202
tf155
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PDF
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2SK1497
Abstract: 2SK1498 MEI-1202 TEA-1035 pw-2n n90
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 DATA SHEET N E C .r •a- A- aft* - MOS FIELD EFFECT POWER TRANSISTOR 2SK1497/2SK1498
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2SK1497/2SK1498
2SK1497/2SK1498
IEI-1209)
2SK1497
2SK1498
MEI-1202
TEA-1035
pw-2n n90
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PDF
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2SJ166
Abstract: 2SK1133 diode ir30
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK1133 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm
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2SK1133
2SK1133,
2SJ166
2SK1133
diode ir30
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2SK2234
Abstract: MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK2234 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS
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2SK2234
2SK2234
MEI-1202
TEA-1035
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PDF
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2SK1271
Abstract: MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC iff— 2SK1271 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR r SWITCHING N-CHANNEL POWER MOS FET
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2SK1271
2SK1271
MEI-1202
TEA-1035
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PDF
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2SK1273
Abstract: IEI-1213 MEI-1202
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1273 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm
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2SK1273
2SK1273,
2SK1273
IEI-1213
MEI-1202
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PDF
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2SK1657
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 M O S FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS U n it: mm
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2SK1657
2SK1657
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T0600TB
Abstract: transistor P1
Text: WESTCODE An Date:- 16 Feb, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0600TB45A
T0600TB45A
T0600TB
transistor P1
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T0500NB25E
Abstract: No abstract text available
Text: WESTCODE An Date:- 5 Sep, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0500NB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0500NB25E
rang562)
T0500NB25E
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PDF
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T0570VB
Abstract: No abstract text available
Text: WESTCODE An Date:- 18 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0570VB25G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0570VB25G
T0570VB25G
T0570VB
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PDF
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Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 16 Feb, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0600TB45A
T0600TB45A
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PDF
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c 2328a
Abstract: 2SJ206 T500
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ206 P-CHANNEL MOS FET FOR SWITCHING The 2SJ206, P-channel vertical type MOS FET, is a switching device
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2SJ206
2SJ206,
c 2328a
2SJ206
T500
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AT-42086
Abstract: AT-42086-BLK AT-42086-TR1 S21E 42086tr1
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz • High Gain at 1 dB Compression: 13.5 dB Typical G1 dB at 2.0 GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth
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AT-42086
AT-42086
RN/50
5965-8914E
AT-42086-BLK
AT-42086-TR1
S21E
42086tr1
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PDF
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