TRANSISTOR P100 Search Results

TRANSISTOR P100 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR P100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
XC6SLX16-CSG324 Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695 Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller	Original	DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL	PDF
2sA1186 transistor Abstract: transistor p100 2SA1186 Y130 Y-140 2SC2837 Y140 Y160 5060 transistor 2sc2837 transistor Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications	Original	2SA1186 -150V 2SC2837 2sA1186 transistor transistor p100 2SA1186 Y130 Y-140 2SC2837 Y140 Y160 5060 transistor 2sc2837 transistor	PDF
2SC2838 Abstract: 2SA1187 transistor 2SC2838 y130 y140 p120 TRANSISTOR P90 P100 P110 of transistor P100 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1187 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2838 APPLICATIONS ·For audio and general purpose applications	Original	2SA1187 -150V 2SC2838 -150V 2SC2838 2SA1187 transistor 2SC2838 y130 y140 p120 TRANSISTOR P90 P100 P110 of transistor P100	PDF
2SA1186 Abstract: transistor p100 2SC2837 2sA1186 transistor transistor p90 y130 2sc2837 transistor transistor pnp VCEO 12V Ic 1A Y140 Y160 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications	Original	2SA1186 -150V 2SC2837 2SA1186 transistor p100 2SC2837 2sA1186 transistor transistor p90 y130 2sc2837 transistor transistor pnp VCEO 12V Ic 1A Y140 Y160	PDF
power transistor 2sc3856 Abstract: 5060 transistor of transistor P100 2SA1492 TRANSISTOR P90 transistor 2sa1492 transistor p100 P120 TRANSISTOR Y130 Y140 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1492 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3856 APPLICATIONS ·For audio and general purpose applications	Original	2SA1492 -180V 2SC3856 power transistor 2sc3856 5060 transistor of transistor P100 2SA1492 TRANSISTOR P90 transistor 2sa1492 transistor p100 P120 TRANSISTOR Y130 Y140	PDF
transistor Bc 542 Abstract: transistor bc 567 Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power	Original	FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 85GHz) EB-1000AS-AA 14GHz) transistor Bc 542 transistor bc 567	PDF
P2462-J29 Abstract: No abstract text available Text: SIEMENS Control ICs for Switched-Mode Power Supplies TDA 4601 ; -D Bipolar IC Features • • • • • Direct control of the switching transistor Low start-up current Reversing linear overload characteristic Base current drive proportional to collector current	OCR Scan	P-DIP-18 67000-A2379 601-D 67000-A2390 P-DIP-18-1 4601/D P2462-J29	PDF
Untitled Abstract: No abstract text available Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz	Original	PTFB213004F PTFB213004F 300-watt H-37275-6/2	PDF
VdS 2093 2009 Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114 Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz	Original	PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114	PDF
TL272 Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty	Original	PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O	PDF
uPC2581 Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157 Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8	Original	PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157	PDF
sc5 s dc 6v relay Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997	Original	Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503	PDF
PS2501-1 Abstract: Nec PS2501L PS2501L-2 P10025EJ7V0DS00 PS2501-2 PS2501-4 PS2501L-1 PS2501L-1-E3 PS2501L-2-E3 PS2501L-4 Text: DATA SHEET PHOTOCOUPLER PS2501-1,-2,-4, PS2501L-1,-2,-4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC TM Series− DESCRIPTION The PS2501-1, -2, -4 and PS2501L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode	Original	PS2501-1 PS2501L-1 PS2501-1, PS2501L-1, PS2501L-1-E3, PS2501L-2-E3, Nec PS2501L PS2501L-2 P10025EJ7V0DS00 PS2501-2 PS2501-4 PS2501L-1-E3 PS2501L-2-E3 PS2501L-4	PDF

nec 2501 Abstract: 2501 photocoupler PS2501-1 PS2501-2 PS2501-4 PS2501L-1 PS2501L-1-E3 PS2501L-2-E3 PS2501L-4 ps2501l-2 Text: DATA SHEET PHOTOCOUPLER PS2501-1,-2,-4,PS2501L-1,-2,-4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2501-1, -2, -4 and PS2501L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode	Original	PS2501-1 PS2501L-1 PS2501-1, PS2501L-1, PS2501L-1-E3, PS2501L-2-E3, nec 2501 2501 photocoupler PS2501-2 PS2501-4 PS2501L-1-E3 PS2501L-2-E3 PS2501L-4 ps2501l-2	PDF
BCD FREQUENCY METER Abstract: k148 transistor K3NR-PB2A transistor k31 K3NR-NB2A transistor k135 K3NR-NB1A TRANSISTOR BCD 109 logic control of conveyor k31-FLK1 communication manual Text: Frequency/Rate Meter K3NR High-speed, Intelligent Interface Modules with Seven Operating Modes Convert Single or Dual Input Pulses to Display Values • 50-kHz input range and 0.006% accuracy for sophisticated control. • A wide selection of outputs: relay, transistor, BCD, linear, or	Original	50-kHz K-155 N087-E1-02 K-156 BCD FREQUENCY METER k148 transistor K3NR-PB2A transistor k31 K3NR-NB2A transistor k135 K3NR-NB1A TRANSISTOR BCD 109 logic control of conveyor k31-FLK1 communication manual	PDF
70GHz HEMT Amplifier Abstract: smd code z16 transistor z14 smd FPD1000AS T491B105M035AS7015 atc600s2r0bw max 9694 e transistor bc 567 capacitor 1mf Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized	Original	FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 880MHz) EB1000AS-AB 70GHz HEMT Amplifier smd code z16 transistor z14 smd T491B105M035AS7015 atc600s2r0bw max 9694 e transistor bc 567 capacitor 1mf	PDF
10ID Abstract: 2SC2995 P100 R6P-F Text: 2SC2995 TO SH IBA TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2995 Unit in mm FM /A M RF, MIX, OSC, IF HIGH FREQUENCY A M PLIFIER APPLICATIONS. 4.2MAX. • • High stability Oscillation Voltage On FM Local Oscillator. Recommend FM/AM RF, MIX, OSC and IF.	OCR Scan	2SC2995 55MAX. 10ID 2SC2995 P100 R6P-F	PDF
transistor c735 Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103 Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103	PDF
C144 DIGITAL NPN TRANSISTOR Abstract: transistor c143 C144 transistor SWITCHING TRANSISTOR C144 K3NC-NB1A C143 transistor transistor c144 C144* transistor c144 equivalent transistor XM2A-3701 Text: Up/Down Counting Meter K3NC Counters An Ideal Interface for High-speed Up/Down Counting and Serial Communications • 50-kHz input range for high-speed signal processing. • A wide selection of outputs: relay, transistor, BCD, linear, or communications. • Prescale function available, which displays in units of actual	Original	50-kHz EN61010-1 IEC1010-1) C-153 C144 DIGITAL NPN TRANSISTOR transistor c143 C144 transistor SWITCHING TRANSISTOR C144 K3NC-NB1A C143 transistor transistor c144 C144* transistor c144 equivalent transistor XM2A-3701	PDF
transistor p98 Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57 Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC	Original	CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57	PDF
uPD3599 Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117	PDF
lg crt monitor circuit diagram Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY	PDF
ITH60C06 Abstract: No abstract text available Text: ITH60C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR Advance Inform ation DS5048-1.1 O ctober 1998 T h e IT H 6 0 C 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range	OCR Scan	ITH60C06 DS5048-1 ITH60C06	PDF

TRANSISTOR P100 Search Results

TRANSISTOR P100 Result Highlights (5)

TRANSISTOR P100 Datasheets Context Search

sx3704

XC6SLX16-CSG324

2sA1186 transistor

2SC2838

2SA1186

power transistor 2sc3856

transistor Bc 542

P2462-J29

Untitled

VdS 2093 2009

TL272

uPC2581

sc5 s dc 6v relay

PS2501-1

nec 2501

BCD FREQUENCY METER

70GHz HEMT Amplifier

10ID

transistor c735

C144 DIGITAL NPN TRANSISTOR

transistor p98

uPD3599

lg crt monitor circuit diagram

ITH60C06