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    TRANSISTOR P1P Search Results

    TRANSISTOR P1P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P1P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFR92 application note

    Abstract: BFR92 TRANSISTOR p1p datasheet BFT92 transistor P1P 39 TRANSISTOR p1p BFR90 amplifier BFR92 transistor transistor BFR92 BFR90
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR92 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR92 PINNING NPN transistor in a plastic SOT23


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    BFR92 MSB003 BFT92. BFR92 application note BFR92 TRANSISTOR p1p datasheet BFT92 transistor P1P 39 TRANSISTOR p1p BFR90 amplifier BFR92 transistor transistor BFR92 BFR90 PDF

    transistor P1P

    Abstract: BFR92 transistor bfr92 MSB003 p1p transistor code p1p MW27 choke 3122 108 20150 BFR90 BFT92
    Text: Philips Semiconductors M 7 3 ilO flEb D D b lllfl 555 H P H IN Product specification NPN 5 GHz wideband transistor DESCRIPTION £ BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and oscillators. The transistor features


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    73ilOfigb BFR92 BFT92. MSB003 25mitter 711052k transistor P1P transistor bfr92 p1p transistor code p1p MW27 choke 3122 108 20150 BFR90 BFT92 PDF

    TRANSISTOR p1p

    Abstract: TRANSISTOR p1p datasheet transistor P1P 43 BP317 PXT2222A PXT2907A TRANSISTOR p1p 23 transistor P1P 39
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXT2222A NPN switching transistor Product specification Supersedes data of 1997 May 05 1999 Apr 14 Philips Semiconductors Product specification NPN switching transistor PXT2222A FEATURES PINNING • High current max. 600 mA


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    M3D109 PXT2222A PXT2907A. MAM296 SCA63 115002/00/03/pp8 TRANSISTOR p1p TRANSISTOR p1p datasheet transistor P1P 43 BP317 PXT2222A PXT2907A TRANSISTOR p1p 23 transistor P1P 39 PDF

    Untitled

    Abstract: No abstract text available
    Text: • Philips Semiconductors bb53T31 0055155 757 H A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor DESCRIPTION Product specification b7E J> c BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use In RP wideband amplifiers and


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    bb53T31 BFR92 BFT92. bbS3131 00B5157 bS3T31 -------------BFR92 PDF

    BUK436-60A

    Abstract: BUK436-60B buk436 7N11 V6-S
    Text: PHILIPS INTERNATIONAL b5E » • 7110fi2b 00b3fl^l 3>^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    7110fi2b BUK436-60A/B BUK436 711Dfi2b BUK436-60A/B BUK436-60A BUK436-60B 7N11 V6-S PDF

    transistor P1P

    Abstract: BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p
    Text: m P hilips S em iconductors bbS3T31 N AMER DD2S1S2 757 H I A P X PHILIPS/DISCRETE _ . ._. Product specifigatjon b7E J> NPN 5 GHz wideband transistor £ BFR92 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily Intended for use in RF wideband amplifiers and


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    bbS3T31 BFR92 BFT92. transistor P1P BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p PDF

    TRANSISTOR p1p

    Abstract: p1p transistor SOT89 MARKING CODE B2 transistor P1P 4 PXT2222A PXT2907A BL SOT89 MARKING BL SOT89
    Text: Philips Semiconductors Product specification NPN switching transistor PXT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base General purpose switching and linear amplification.


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    PXT2222A PXT2907A. PXT2222A MLB826 TRANSISTOR p1p p1p transistor SOT89 MARKING CODE B2 transistor P1P 4 PXT2907A BL SOT89 MARKING BL SOT89 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 May 05 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Product specification NPN switching transistor PXT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).


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    PXT2222A PXT2907A. PXT2222A 115002/00/03/pp8 PDF

    MGH80

    Abstract: TRANSISTOR SMD catalog AN98017 AN98020 AN98026 BLV909 SMD TRANSISTOR
    Text: APPLICATION NOTE 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz AN98020 Philips Semiconductors 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER BACKGROUND 4 AMPLIFIER PERFORMANCE


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    BLV909 AN98020 BLV909. SCA57 MGH80 TRANSISTOR SMD catalog AN98017 AN98020 AN98026 SMD TRANSISTOR PDF

    darlington transistor C 3300

    Abstract: transistor 6c x T1L119 MCA255 isocom V/MCA255 isocom
    Text: ISOCOM LTD Optolink OPTOCOUPLERS PHOTO DARLINGTON With base connection Part Number 4N29 4N30 4N31 4N32 4N33 H11B1 MCA2-55 Er»i5 7 CTR O p -10m A MiN %) Optically Coupled Pair with Infrared Emitter and Photo Darlington Transistor 100 50 500 500 flF=1mA)


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    H11B1 MCA2-55 SWITCHINPT662 PTPD60 PIPD61 PIP062 PTPD63 PTPD64 P1P065 MOC8050 darlington transistor C 3300 transistor 6c x T1L119 MCA255 isocom V/MCA255 isocom PDF

    wiring diagram to hold contactor with NO, NC

    Abstract: UA30CLD35NPTR UA30CLD sp 1235 UA18CLD20PPTR UA18CLD05NPM1TR UA18CLD05NPTR UA18CL UA18CLD05PPTR UA18CLD08NPM1TR
    Text: Ultrasonic Diffuse, Dual Transistor Outputs Type M18 and M30 • M18 and M30 PBT housing • Sensing distance: 60 - 3500 mm • Remote Teach by wire • Outputs: 2 multi function switching outputs PNP, NPN, NO or NC • Setup of "Normal Switching", "Window" or "Adjustable


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    UA30CLD35NPTR

    Abstract: No abstract text available
    Text: Ultrasonic Diffuse, Dual Transistor Outputs Type M18 and M30 • M18 and M30 PBT housing • Sensing distance: 60 - 3500 mm • Remote Teach by wire • Outputs: 2 multi function switching outputs PNP, NPN, NO or NC • Setup of "Normal Switching", "Window" or "Adjustable


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    Untitled

    Abstract: No abstract text available
    Text: Ultrasonic Diffuse, Dual Transistor Outputs Type UC 80 CND 60 . P M1 TR • Square 80 mm ABS housing • Sensing distance: 600 - 6000 mm • Remote Teach by wire • Outputs: 2 multi function switching outputs PNP or NPN, NO or NC • Setup of "Normal Switching", "Window" or "Adjustable


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    wiring diagram to hold contactor with NO, NC

    Abstract: IR DUAL LED SENSOR MARKING P1 TRANSISTOR ultrasonic sensor performance UC80CND60PPM1TR
    Text: Ultrasonic Diffuse, Dual Transistor Outputs Type UC 80 CND 60 . P M1 TR • Square 80 mm ABS housing • Sensing distance: 600 - 6000 mm • Remote Teach by wire • Outputs: 2 multi function switching outputs PNP or NPN, NO or NC • Setup of "Normal Switching", "Window" or "Adjustable


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    relay Re 04501

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
    Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997


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    ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031 PDF

    NPN transistor 8050

    Abstract: 8050 NPN transistor 8050 pin connections TRANSISTOR 8050 XTAL 4M npn 8050 Taiwan Xtal SN66007 SN66010 SN66012
    Text: SN660000 WITH OTP ROM Configure and Setup OVERVIEW 27mm 33mm Figure-1 Figure 2 CHIPS EMULATED SN66000 Series: OTP Type V 1.0 Emulated Chip Voice Channel ROM Duration Number Size IO 2M SN66007 7 sec 2 25Kx12 8: 8 IO P2, P3 2M SN66010 10 sec 2 32Kx12 8: 8 IO (P2, P3)


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    SN660000 SN66000 25Kx12 SN66010 32Kx12 SN66012 40Kx12 SN66016 52Kx12 SN66020 NPN transistor 8050 8050 NPN transistor 8050 pin connections TRANSISTOR 8050 XTAL 4M npn 8050 Taiwan Xtal SN66007 SN66010 SN66012 PDF

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 PDF

    LC6523

    Abstract: transistor 7p6 LC6527C TRANSISTOR BC 212 3007A-DIP18 DIP18 LC6500 transistor BC 667 transistor P1P 27F512
    Text: Ordering number: EN 4363C LC6527N/F/L, LC6528N/F/L CMOS IC LC6527N/F/L, 6528N/F/L Single-chip 4-bit Microcomputer for Small-scale Control-oriented Applications Overview Package Dimensions CF oscillation constant The LC6527N/F/L, LC6528N/F/L belong to our single-chip


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    4363C LC6527N/F/L, LC6528N/F/L 6528N/F/L LC6528N/F/L LC6500 LC6523 transistor 7p6 LC6527C TRANSISTOR BC 212 3007A-DIP18 DIP18 transistor BC 667 transistor P1P 27F512 PDF

    T4320

    Abstract: MT4320AE 3 x 4 telephone keypad
    Text: ISO-CMOS MT4320 Keypad Pulse Dialer M IT E L J A N 1985 Features • • • • • • • • Pin Connections Pin for pin replacement for the DF320 2.5V to 5.5V supply voltage operating range 375pW dynamic power dissipation at 3.0V Uses inexpensive 3.58MHz ceramic resonator or


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    MT4320 DF320 375pW 58MHz 932Hz MT4320. T4320 MT4320AE 3 x 4 telephone keypad PDF

    MT4320

    Abstract: matrix encoded keypad DF320 MT4320AE telephone KEYPAD telephone keypad interface circuit with dtmf MT4320AC "Pin for Pin" circuit diagram of keypad interface with dtmf circuit diagram of speech recognition
    Text: ISO-CMOS M T4320 Keypad Pulse Dialer MITEL Features • • • • • • • • Pin Connections Pin for pin replacement for the DF320 2.5V to 5.5V supply voltage operating range 375pW dynamic power dissipation at 3.0V Uses inexpensive 3.58MHz ceramic resonator or


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    MT4320 DF320 375/jW 58MHz DF320 MT4320. matrix encoded keypad MT4320AE telephone KEYPAD telephone keypad interface circuit with dtmf MT4320AC "Pin for Pin" circuit diagram of keypad interface with dtmf circuit diagram of speech recognition PDF

    SNC200

    Abstract: 27C2000 SNC202 voice chip otp eprom writer SNC201 SNC203 SNC204 SNC205 SNC206
    Text: SNC200 WITH OTP ROM Configure and Setup 1 OVERVIEW 33mm 33mm Figure-1 2 Figure 2 CHIPS EMULATED SNC200 Series: OTP Type V 1.0 Emulated Chip Voice Channel ROM Duration Number Size IO 2M SNC201 3 sec 1 10Kx10 4: 4 IO P3 2M SNC202 6 sec 1 12KX10 4: 4 IO (P3)


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    SNC200 10Kx10 SNC202 12KX10 SNC203 32Kx10 SNC204 40Kx10 SNC205 27C2000 SNC202 voice chip otp eprom writer SNC201 SNC203 SNC204 SNC205 SNC206 PDF

    TRANSISTOR p1p

    Abstract: PMBT2222A PMBT2222
    Text: Philips Semiconductors Product specification NPN switching transistors PMBT2222; PMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear amplification.


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    PMBT2222; PMBT2222A PMBT2907 PMBT2907A. PMBT2222 PMBT2222A TRANSISTOR p1p PDF

    npn power transistor 100v list

    Abstract: 1N4148 SOT-23 DV3917 SOT23 N FET 100V 5.6V DIODE ZENER 1N Samsung s5 schematic zener 6v, 1w 1n4148 sot C2N SOT-23 1N4148
    Text: DN-110 Design Note DV3917 Positive Floating HSPM By Ed Jung Introduction Connectors The DV3917 evaluation board allows the designer to evaluate the performance of the UCC3917 Hot Swap Power Manager HSPM in a typical application setting. Component selection for the DV3917 is


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    DN-110 DV3917 UCC3917 ECJ2YB1C224K 219-4MST 1101M2S3AQE2 npn power transistor 100v list 1N4148 SOT-23 SOT23 N FET 100V 5.6V DIODE ZENER 1N Samsung s5 schematic zener 6v, 1w 1n4148 sot C2N SOT-23 1N4148 PDF

    Buzzer 4khz

    Abstract: 1205 transistor buzzer 1205 LC5739 QFP64 p13 transistor OSC XTAL 32.768KHZ transistor 1205 transistor A 1205 12 Y
    Text: Ordering number : ENN*6704 CMOS IC LC5739 4-Bit Microcontroller with LCD Driver Preliminary Overview The LC5739 is a CMOS 4-bit microcontroller that operates on low voltage and very low power consumption. It also contains 4K-byte ROM, 128-byte RAM, LCD drivers and melody function.


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    LC5739 LC5739 128-byte 768kHz P00-03, P10-13 Figure11 Buzzer 4khz 1205 transistor buzzer 1205 QFP64 p13 transistor OSC XTAL 32.768KHZ transistor 1205 transistor A 1205 12 Y PDF