TRANSISTOR P2D Search Results

TRANSISTOR P2D Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR P2D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PZTA92T1 Abstract: SMD310 Text: ON Semiconductort PZTA92T1 High Voltage Transistor PNP Silicon ON Semiconductor Preferred Device COLLECTOR 2,4 BASE 1 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage	Original	PZTA92T1 261AA r14525 PZTA92T1/D PZTA92T1 SMD310	PDF
Untitled Abstract: No abstract text available Text: ON Semiconductort PZTA92T1 High Voltage Transistor PNP Silicon ON Semiconductor Preferred Device COLLECTOR 2,4 BASE 1 SOT−223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage	Original	PZTA92T1 OT-223 318E-04, O-261AA	PDF
p2d transistor Abstract: pzta92t1 Text: ON Semiconductort PZTA92T1 High Voltage Transistor PNP Silicon ON Semiconductor Preferred Device COLLECTOR 2,4 BASE 1 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage	Original	PZTA92T1 261AA r14525 PZTA92T1/D p2d transistor pzta92t1	PDF
transistor P2D Abstract: No abstract text available Text: ON Semiconductort PZTA92T1 High Voltage Transistor PNP Silicon ON Semiconductor Preferred Device COLLECTOR 2,4 BASE 1 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage	Original	PZTA92T1 261AA transistor P2D	PDF
sot-223 body marking D K Q F Abstract: No abstract text available Text: MOTOROLA Order this document by PZTA92T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor P N P PZTA92T1 S iliC O n COLLECTOR2,4 Motorola Preferred Device SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol	OCR Scan	PZTA92T1/D PZTA92T1 OT-223 sot-223 body marking D K Q F	PDF
Marking BA SOT89 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXTA92 PNP high-voltage transistor Product specification Supersedes data of 1997 Jun 20 Philips Sem iconductors 1999 Apr 29 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor PXTA92 FEATURES	OCR Scan	PXTA92 PXTA92 PXTA42. PXTA93 115002/00/03/pp8 Marking BA SOT89	PDF
transistor P2D Abstract: 301 marking code PNP transistor BP317 PXTA42 PXTA92 PXTA93 P2d MARKING CODE Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA92 PNP high-voltage transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 29 Philips Semiconductors Product specification PNP high-voltage transistor PXTA92 FEATURES PINNING • Low current max. 100 mA	Original	M3D109 PXTA92 PXTA42. PXTA93 MAM297 SCA63 115002/00/03/pp8 transistor P2D 301 marking code PNP transistor BP317 PXTA42 PXTA92 PXTA93 P2d MARKING CODE	PDF
MAGX-000035-100000 Abstract: GaN amplifier 100W transistor 15 GHz Gan on silicon transistor MAGX-000035-SB2PPR 2.4 GHz rf amplifier 100w 100WCW MAGX-000035 Text: MAGX-000035-100000 GaN HEMT Power Transistor 100W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation	Original	MAGX-000035-100000 MAGX-000035-100000 GaN amplifier 100W transistor 15 GHz Gan on silicon transistor MAGX-000035-SB2PPR 2.4 GHz rf amplifier 100w 100WCW MAGX-000035	PDF
transistor GaN Abstract: No abstract text available Text: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 Flanged • GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching	Original	MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-01000X transistor GaN	PDF
MAGX-000035 Abstract: No abstract text available Text: MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation	Original	MAGX-000035-030000 MAGX-000035-030000 MAGX-000035	PDF
TUI-lf-9 Abstract: ATC700B392JT50X Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched	Original	MMRF1016H MMRF1016HR5 7/2014Semiconductor, TUI-lf-9 ATC700B392JT50X	PDF
MAGX-000035-030000 Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw transistor 15 GHz MAGX-000035-SB1PPR Gan on silicon transistor GP18-20 5 GHZ TRANSISTOR 1W MAGX-000035 Text: MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation	Original	MAGX-000035-030000 MAGX-000035-030000 tRANSISTOR 2.7 3.1 3.5 GHZ cw transistor 15 GHz MAGX-000035-SB1PPR Gan on silicon transistor GP18-20 5 GHZ TRANSISTOR 1W MAGX-000035	PDF
ATC100B151J Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.	Original	MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT	PDF
mrf6vp2600h Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.	Original	MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H	PDF

ATC100B3R3 Abstract: AN1955 MRF7S35120HSR3 Header MTTF Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35120HS MRF7S35120HSR3 ATC100B3R3 AN1955 MRF7S35120HSR3 Header MTTF	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35015HS MRF7S35015HSR3	PDF
J161 mosfet transistor Abstract: 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 1, 8/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35015HS MRF7S35015HSR3 J161 mosfet transistor 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3	PDF
A114 Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500 Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35120HS MRF7S35120HSR3 A114 A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500	PDF
Untitled Abstract: No abstract text available Text: PZTA92T1G, NSVPZTA92T1G High Voltage Transistor PNP Silicon http://onsemi.com Features • Complement to PZTA42T1G • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable	Original	PZTA92T1G, NSVPZTA92T1G PZTA42T1G PZTA92T1/D	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35120HS MRF7S35120HSR3	PDF
MRF7S35015H Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35015HS MRF7S35015HSR3 MRF7S35015HS MRF7S35015H	PDF
A114 Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 2, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35120HS MRF7S35120HSR3 A114 A115 AN1955 C101 JESD22 MRF7S35120HSR3	PDF
Untitled Abstract: No abstract text available Text: T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN Discrete RF Transistor Applications • Wideband and narrowband defense and commercial communication systems –– Jammers –– Professional radio systems –– WiMAX Available Package Top Bottom Product Features	Original	T1G6003028-SP 20MHz-6GHz, T1G6003028-SP	PDF
p2d transistor Abstract: transistor P2D pzta92t1 Text: PZTA92T1 Preferred Devices High Voltage Transistor PNP Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS TC = 25°C unless otherwise noted Rating Symbol Value Unit Collector-Emitter Voltage VCEO −300 Vdc Collector-Base Voltage	Original	PZTA92T1 OT-223 PZTA92T1/D p2d transistor transistor P2D pzta92t1	PDF

TRANSISTOR P2D Search Results

TRANSISTOR P2D Result Highlights (5)

TRANSISTOR P2D Datasheets Context Search

PZTA92T1

Untitled

p2d transistor

transistor P2D

sot-223 body marking D K Q F

Marking BA SOT89

transistor P2D

MAGX-000035-100000

transistor GaN

MAGX-000035

TUI-lf-9

MAGX-000035-030000

ATC100B151J

mrf6vp2600h

ATC100B3R3

Untitled

J161 mosfet transistor

A114

Untitled

Untitled

MRF7S35015H

A114

Untitled

p2d transistor