TRANSISTOR P32 Search Results

TRANSISTOR P32 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR P32 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
C10535E Abstract: C11531E fb1l3n Text: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive	Original	C11531E) C10535E C11531E fb1l3n	PDF
XC6SLX16-CSG324 Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695 Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller	Original	DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL	PDF
sf 128 transistor Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47 Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.	Original	SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47	PDF
FB1F3P Abstract: ic marking P30 FB1A4M marking P32 transistor transistor marking p30 Text: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES ON-CHIP RESISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR MID-SPEED SWITCHING PACKAGE DRAWING Unit: mm FEATURES • Up to 0.7 A current drive available 2.8±0.2 0.4 +0.1 –0.05 • On-chip bias resistor • Low power consumption during drive	Original	SC-59) FB1F3P ic marking P30 FB1A4M marking P32 transistor transistor marking p30	PDF
ic 4PC Abstract: 115b1 Text: GaAs IRED a PHOTO-TRANSISTOR TLP320,-2,-4 TENTATIVE DATA T L P 3 2 0 U nit in mm T E L E C O M M U N IC A T IO N TLP320 OFFICE M A C H IN E ~ A T ELEP H O N E USE E Q U IP M E N T 3 The TOSHIBA TLP320, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode.	OCR Scan	TLP320 TLP320 TLP320, TLP320-2 TLP320-4 150mA. 150mA 5000Vrm ic 4PC 115b1	PDF
12vdc motor forward reverse control diagram Abstract: star delta wiring diagram motor start y VFAS1 igbt based induction furnace circuit diagram toshiba electric motor data sheet 90kW treadmill motor controller free circuit diagram of treadmill 5kw inverter circuit diagram 12-pulse induction furnace diagram wiring mitsubishi elevator Text: Transistor Inverter High-performance Inverter TOSVERT Flexible for you For your Commercial facilities, offices and factories • Feature: Reduce high-frequency noise1, Reduce harmonics1 • Applications: Washing machines, Treadmill, Showcase refrigerators, Medical equipment,	Original		PDF
2SB1132PT Abstract: 2SB1132 marking P32 transistor Text: CHENMKO ENTERPRISE CO.,LTD 2SB1132PT SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89	Original	2SB1132PT SC-62/SOT-89 SC-6200 2SB1132PT 2SB1132 marking P32 transistor	PDF
2SB1132GP Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD 2SB1132GP SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89	Original	2SB1132GP SC-62/SOT-89 SC-6-200 2SB1132GP	PDF
uPC2581 Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157 Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8	Original	PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157	PDF
TRANSISTOR p50 Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11 Text: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the	Original	eSHP170COB eSHP170COB eSHP170 eSHP170 AP-eSH-0005 TRANSISTOR p50 p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11	PDF
sc5 s dc 6v relay Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997	Original	Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503	PDF
PS2501 optocoupler Abstract: PS2S01-1 Text: HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS2501-1 ,-2,-4 PS2501L-1,-2,-4 FEATURES_ DESCRIPTION • PS2501-1, -2, -4 and PS2501L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN	OCR Scan	PS2501-1 PS2501L-1 PS2501-1, PS2501L-1, PS25Q1-1, PS25Q1L-1, PS2501 PS2501 optocoupler PS2S01-1	PDF

MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503	PDF
c5088 transistor Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N	PDF
transistor c3909 Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC	Original	APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor	PDF
Untitled Abstract: No abstract text available Text: Not recommended for new design. Alternative is FZT789A DPLS325E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features N •        Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 200 at IC = 2A	Original	FZT789A DPLS325E DNLS320E) OT-223 OT-223 J-STD-020D DS31327	PDF
transistor p98 Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57 Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC	Original	CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57	PDF
MAT02FH Abstract: mat02specifications OP07 "direct replacement" MAT02 MAT02A MAT02E MAT02EH MAT04 MA5325 MAT-02 Text: ANALOG DEVICES Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 jjlV max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/VHz max High Gain hFE : 500 min at lc = 1 mA 300 min at lc = 1 pA Excellent Log Conformance: rBE - 0.3 ft	OCR Scan	MAT02 LM194/394 MAT02 MAT02. MAT02F D0b047b MAT02FH mat02specifications OP07 "direct replacement" MAT02A MAT02E MAT02EH MAT04 MA5325 MAT-02	PDF
N1702 Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961	OCR Scan	2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922	PDF
Untitled Abstract: No abstract text available Text: DPLS325E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70mΩ at 3A High DC Current Gain hFE > 200 at IC = 2A Complementary NPN Type Available (DNLS320E)	Original	DPLS325E DNLS320E) OT-223 J-STD-020D DS31327	PDF
Untitled Abstract: No abstract text available Text: SERIES 215 TRANSISTOR SOCKET INTERCONNECTION SPECIALISTS DIA. .370 [9 .4 0 ] OIA. I .100 [2 .5 4 ] 8 PIN 4 PIN 3 PIN - .230 [5 .8 4 ] OIA. .370 [9 .4 0 ] DIA. _L —r .100 [2 .5 4 ] -75 10 PIN CONTACT TYPE S: STANDARD DIP IN SER TIO N FORCE WITHDRAWAL FORCE	OCR Scan		PDF
uPD3599 Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117	PDF

TRANSISTOR P32 Search Results

TRANSISTOR P32 Result Highlights (5)

TRANSISTOR P32 Datasheets Context Search

2N2222A 338

sx3704

C10535E

XC6SLX16-CSG324

sf 128 transistor

FB1F3P

ic 4PC

12vdc motor forward reverse control diagram

2SB1132PT

2SB1132GP

uPC2581

TRANSISTOR p50

sc5 s dc 6v relay

PS2501 optocoupler

MHW721A2

c5088 transistor

transistor c3909

Untitled

transistor p98

MAT02FH

N1702

Untitled

Untitled

uPD3599