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    TRANSISTOR P75N02LDG Search Results

    TRANSISTOR P75N02LDG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P75N02LDG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P75N02LDG

    Abstract: transistor P75N02LDG Niko Semiconductor p75n02ldg P75N02LD dpak code field effect transistor TO252-DPAK
    Text: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P75N02LDG TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 5mΩ 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P75N02LDG O-252 P75N02LDG" SEP-02-2004 P75N02LDG transistor P75N02LDG Niko Semiconductor p75n02ldg P75N02LD dpak code field effect transistor TO252-DPAK PDF

    P75N02LDG

    Abstract: P75N02
    Text: Single N-channel MOSFET ELM32428LA-S •General description ■Features ELM32428LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=75A Rds(on) < 7mΩ (Vgs=10V) Rds(on) < 10mΩ (Vgs=4.5V)


    Original     		ELM32428LA-S ELM32428LA-S P75N02LDG O-252 Jun-11-2005 P75N02LDG P75N02 PDF

    P75N02LDG

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32428LA-S •General description ■Features ELM32428LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=75A Rds(on) < 7mΩ (Vgs=10V) Rds(on) < 10mΩ (Vgs=4.5V)


    Original     		ELM32428LA-S ELM32428LA-S P75N02LDG O-252 Jun-11-2005 P75N02LDG PDF

    P75N02LDG

    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM32428LA-S •概要 ■特長 ELM32428LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=75A ・ Rds on < 7mΩ (Vgs=10V) ・ Rds(on) < 10mΩ (Vgs=4.5V)


    Original     		ELM32428LA-S P75N02LDG O-252 Jun-11-2005 P75N02LDG PDF

    ELM32428LA

    Abstract: No abstract text available
    Text: 单 N 沟道 MOSFET ELM32428LA-S •概要 ■特点 ELM32428LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=75A ·Rds on < 7mΩ (Vgs=10V) ·Rds(on) < 10mΩ (Vgs=4.5V) ■绝对最大额定值 项目


    Original     		ELM32428LA-S P75N02LDG O-252 Jun-11-2005 ELM32428LA PDF