TRANSISTOR PH18 Search Results

TRANSISTOR PH18 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR PH18 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor j5 Abstract: 45W AMP PH1819-45A Wireless power Text: Wireless Power Transistor 45 Watts 1805-1880 MHz PH1819-45A PH1819-45A Wireless Power Transistor 45 Watts, 1805 - 1880 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor rd -28 dBc Typical 3 IMD at 45 Watts PEP Common Emitter Class AB Operation	Original	PH1819-45A PH11819-45A PH1819-4 100KHz 1805MHz 1842MHz 1880MHz transistor j5 45W AMP PH1819-45A Wireless power	PDF
PH1819-45 Abstract: DSAE001132 Text: PH1819-45 Wireless Bipolar Power Transistor 45W, 1805-1880 MHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching	Original	PH1819-45 PH1819-45 DSAE001132	PDF
POE-15 Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom Text: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP	Original	PH1819-15N POE-15 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom	PDF
Untitled Abstract: No abstract text available Text: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching	Original	PH1819-33	PDF
33w NPN Abstract: Pacific Wireless PH1819-33 Text: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching	Original	PH1819-33 33w NPN Pacific Wireless PH1819-33	PDF
PH1819-15N Abstract: No abstract text available Text: PH1819-15N Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • • NPN silicon microwave power transistor Designed for linear amplifier applications Class AB: -34 dBc typ. 3rd IMD at 15 W PEP	Original	PH1819-15N PH1819-15N	PDF
PH1819-4N Abstract: 1850 transistor Text: PH1819-4N Wireless Bipolar Power Transistor 4W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • • NPN silicon microwave power transistor Designed for linear amplifier applications Class AB: -34 dBc typ. 3rd IMD at 4 W PEP	Original	PH1819-4N PH1819-4N 1850 transistor	PDF
13MM Abstract: PH1819-4N v6 4n diode Text: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point	Original	PH1819-4N rl850 300mA 13MM PH1819-4N v6 4n diode	PDF
181945 Abstract: No abstract text available Text: A fik k Coming Attractions M aann A M P c<o m p a n y Wireless Bipolar Power Transistor, 45W 1805-1880 MHz PH1819-45 Features • • • • • NPN Silicon Microwave Power Transistor Com m on Emitter Class AB O peration Internal Input and O utput Im pedance Matching	OCR Scan	PH1819-45 181945	PDF
J5417AKK Abstract: MALLORY 150 CAPACITORS Rogers 6010.5 ATC100A PH1819-45A transistor 41 j5417 Text: PH1819-45A M/A-OOM Wireless Power Transistor 45 Watts, 1805- 1880 MHz /MOCOVI M RF & Microwave Products Outline Drawing1 Description M/A-COM’s PH11819-45A is a high efficiency silicon bipo lar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1805	OCR Scan	PH1819-45A PH11819-45A PH1819-45A J5417AKK TT50M50A ATC100A MALLORY 150 CAPACITORS Rogers 6010.5 transistor 41 j5417	PDF
transistor b 595 Abstract: ATC100A PH1819-45 Text: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System	Original	PHl819-45 transistor b 595 ATC100A PH1819-45	PDF
1N4Z45 Abstract: T33 transistor Text: Atím m w an A M P com pany Wireless Power Transistor, 33W 1805-1880 MHz PH1819-33 V2.01 Features • NPN Silicon M icrow ave P o w er Transistor • C o m m o n Km itter C lass AB O peratio n • In tern al In pu t and O utpu t Im p ed an ce M atching • D iffu sed Km itter B allastin g	OCR Scan	PH1819-33 1N4Z45 T33 transistor	PDF
PH1875L Abstract: No abstract text available Text: PH1875L N-channel TrenchMOS logic level FET Rev. 01 — 29 November 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features	Original	PH1875L PH1875L	PDF
Solutions Abstract: PH1819-10 Text: PH1819-10 Wireless Bipolar Power Transistor 10W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • Designed for cellular base station applications -30 dBc typ. 3rd IMD at 10 W PEP Common emitter configuration	Original	PH1819-10 Solutions PH1819-10	PDF

TRANSISTOR 185 846 Abstract: 1N914B PH1819-2 Text: =-r_= an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 2W PH1819-2 Features Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd IMD at 2 Watts PEP Class A: +43 dBm Typ 3rd Order Intercept Point Common Emitter Configuration	Original	PH1819-2 TRANSISTOR 185 846 1N914B PH1819-2	PDF
c337 transistor Abstract: C338 c338 transistor Text: PH1825AL N-channel TrenchMOS logic level FET Rev. 01 — 22 April 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in	Original	PH1825AL PH1825AL c337 transistor C338 c338 transistor	PDF
bipolar transistor ghz s-parameter Abstract: PH1819-2 083 ICO gp 1291 Text: PH1819-2 Wireless Bipolar Power Transistor 2W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • Designed for cellular base station applications Class AB: -34 dBc typ. 3rd IMD at 2 W PEP Class A: +43 dBm typ. 3rd order intercept point	Original	PH1819-2 bipolar transistor ghz s-parameter PH1819-2 083 ICO gp 1291	PDF
b 595 transistor Abstract: transistor b 595 Text: m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.78 -1.90 GHz Features • • • • • PH1819-10 SL.Ü :i4 dd'- D esigned for C ellular Base Station A pplications -30 dBc Typ 3 rd IMD at 10 W atts PEP C o m m o n K m itter C onfig u ratio n	OCR Scan	PH1819-10 b 595 transistor transistor b 595	PDF
Untitled Abstract: No abstract text available Text: M fc c m m an A M P com pany Wireless Bipolar Power Transistor, 4W 1.78- 1.90 GHz PH1819-4N Features • • • • • • • • /i?b U8 4?> NPN Silicon M icrowave Power T ransistor D esign ed for Linear Am plifier A pplications Class AB: -34 dB c Typ 3rd IMD at 4 Watts PEP	OCR Scan	PH1819-4N	PDF
IU 1047 Abstract: transistor 1005 oj Text: V M fcC Q M m an A M P com pany Wireless Bipolar Power Transistor, 2W 1 .7 8 -1 .9 0 GHz PH1819-2 744 _ Features • • • • • • bL.D ;i4 Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd 1MD at 2 Watts PKP Class A: +43 dBm Typ 3rd Order Intercept Point	OCR Scan	PH1819-2 IU 1047 transistor 1005 oj	PDF
Untitled Abstract: No abstract text available Text: an A M P com pany Wireless Bipolar Power Transistor, 15W 1.78-1.90 GHz Features • • • • • • • • PH1819-15N S/b Cc*4 NPN Silicon Micro w ave Pow er T ran sisto r D esigned for Linear A m plifier A pplications Class AB: -34 dBc Typ 3rd IMD at 15 W atts PKP	OCR Scan	PH1819-15N	PDF
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10	PDF
PH1819-30 Abstract: PH1819 Text: Afa Wireless Power Transistor PH 1819-30 30 Watt, 1.78-1.90 GHz Features Outline Drawing • Designed for Linear Amplifier Applications • -30 dBc Typ 3rd IMD at 30 Watts PEP • Common Emitter Class AB Operation • Internal Input and Output Impedance Matching	OCR Scan	PH1819-30 PH1819-30 PH1819	PDF
LTC 433 Abstract: input 12v 9v output converter diagram LT3845 16ME470WF DN433 flyback converter 3845 16ME47 PH1875L ic lt3845 387K Text: A Positive-to-Negative Voltage Converter Can Be Used for Stable Outputs Even with a Widely Varying Input – Design Note 433 Victor Khasiev + – , LTC and LT are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.	Original	DN433 dn433f LTC 433 input 12v 9v output converter diagram LT3845 16ME470WF flyback converter 3845 16ME47 PH1875L ic lt3845 387K	PDF

TRANSISTOR PH18 Search Results

TRANSISTOR PH18 Result Highlights (5)

TRANSISTOR PH18 Datasheets Context Search

transistor j5

PH1819-45

POE-15

Untitled

33w NPN

PH1819-15N

PH1819-4N

13MM

181945

J5417AKK

transistor b 595

1N4Z45

PH1875L

Solutions

TRANSISTOR 185 846

c337 transistor

bipolar transistor ghz s-parameter

b 595 transistor

Untitled

IU 1047

Untitled

transistor 5cw

PH1819-30

LTC 433