TRANSISTOR PH22 Search Results

TRANSISTOR PH22 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR PH22 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ph2222a Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PH2222A NPN switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 Sep 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES	OCR Scan	PH2222A PH2222A PH2907A. 115002/00/04/pp8	PDF
BP317 Abstract: PH2222A PH2907A Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222A NPN switching transistor Product specification Supersedes data of 1997 Sep 04 1999 Apr 27 Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES PINNING • High current max. 600 mA	Original	M3D186 PH2222A PH2907A. MAM182 SCA63 115002/00/04/pp8 BP317 PH2222A PH2907A	PDF
PH2222A Abstract: PH2907A SC-43A Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222A NPN switching transistor Product specification Supersedes data of 1999 Apr 27 2004 Oct 11 Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES PINNING • High current max. 600 mA	Original	M3D186 PH2222A PH2907A. MAM182 PH2222A SCA76 R75/05/pp7 PH2907A SC-43A	PDF
transistor p8 Abstract: f2224 52Z05 Text: =_ rz an AMP comcww Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2226-11 OM 2.25 - 2.55 GHz v2.00 so3 Features l l l l l l l _ NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors	Original	PH2226-11 06Oi-& transistor p8 f2224 52Z05	PDF
PH2226-110M Abstract: VCC36 Text: Radar Pulsed Power Transistor, 110 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-110M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors	Original	PH2226-110M PH2226-110M VCC36	PDF
transistor f 255 Abstract: TRANSISTOR A 225 PH2226-50M VCC36 Text: Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-50M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors	Original	PH2226-50M transistor f 255 TRANSISTOR A 225 PH2226-50M VCC36	PDF
7z transistor Abstract: J401 PH2226-50M Text: ,s= 7-z E -= 2= .- = = FE an AMP company * Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M Features l l l l l l l ,900 22.85 NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors	Original	PH2226-50M 7z transistor J401 PH2226-50M	PDF
PH2907A Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PH2907A PNP switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 Jun 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP switching transistor PH2907A FEATURES	OCR Scan	PH2907A PH2222A. 115002/00/03/pp8 PH2907A	PDF
PH2907A Abstract: BP317 PH2222A Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2907A PNP switching transistor Product specification Supersedes data of 1997 Jun 02 1999 Apr 27 Philips Semiconductors Product specification PNP switching transistor PH2907A FEATURES PINNING • High current max. 600 mA	Original	M3D186 PH2907A PH2222A. MAM281 SCA63 115002/00/03/pp8 PH2907A BP317 PH2222A	PDF
PH2907A Abstract: SC-43A PH2222A Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2907A PNP switching transistor Product specification Supersedes data of 1999 Apr 27 2004 Oct 11 Philips Semiconductors Product specification PNP switching transistor PH2907A FEATURES PINNING • High current max. 600 mA	Original	M3D186 PH2907A PH2222A. MAM281 PH2907A SCA76 R75/04/pp7 SC-43A PH2222A	PDF
BT816 Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728 Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan	mm/13" O-92S) BT816 TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728	PDF
Untitled Abstract: No abstract text available Text: PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 22 Feb 08 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation	Original	PH2226-110M	PDF
Untitled Abstract: No abstract text available Text: PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 20 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation	Original	PH2226-110M	PDF
PH2226-110M Abstract: No abstract text available Text: PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 22 Feb 08 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation	Original	PH2226-110M PH2226-110M	PDF

Untitled Abstract: No abstract text available Text: PH2226-50M Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 20 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation	Original	PH2226-50M	PDF
TRANSISTOR BC 448 smd Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors	OCR Scan	BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A	PDF
993 395 pnp npn Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10	Original	BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q	PDF
Untitled Abstract: No abstract text available Text: a n A M P com pany Radar Pulsed Power Transistor, 110W, 100\|is Pulse, 10% Duty 2.25 - 2.55 GHz PH2226-110M Features • N PN S ilic o n P o w e r T r a n s is t o r • C o m m o n B a s e C o n fig u r a t io n • B r o a d b a n d C la s s C O p e r a t io n	OCR Scan	PH2226-110M	PDF
Untitled Abstract: No abstract text available Text: jtà c C M W an A M P com pany Radar Pulsed Power Transistor, 50W, 100ns Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M V2.00 Features 8b • NPN S ilic o n P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • B ro a d b a n d C la s s C O p e r a tio n	OCR Scan	100ns PH2226-50M	PDF
lc 945 p transistor NPN Abstract: lc 945 p transistor NPN TO 92 lc 945 p transistor PH2907A ph2222 65LC ph2222a lc 945 transistor Text: Philips Semiconductors Product specification NPN switching transistors PH2222; PH2222A FEATURES PINNING • High current max. 600 mA PIN DESCRIPTION • Low voltage (max. 40 V). 1 2 base APPLICATIONS 3 collector emitter • Switching and linear amplification.	OCR Scan	PH2907 PH2907A. PH2222; PH2222A PH2222 PH2222A lc 945 p transistor NPN lc 945 p transistor NPN TO 92 lc 945 p transistor PH2907A 65LC lc 945 transistor	PDF
ph2222 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222; PH2222A NPN switching transistors Product specification Supersedes data of 1997 May 20 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN switching transistors	Original	M3D186 PH2222; PH2222A PH2907 PH2907A. PH2222A MAM182 SCA55 117047/00/03/pp8 ph2222	PDF
transistor ph22 Abstract: MWS11-PH22-CS h bridge CSP Text: MWS11-PH22-CS CMDA Power Amplifier A M I C R O S E M I C O M P A N Y P RELIMINARY There are two leadless chip carrier LCC package versions for this Power Amplifier family. One is a 3mm x 3mm chip scale package (CSP) with external input/output match and the other is a	Original	MWS11-PH22-CS 29dBm 1710-1780MHz 1850-1910MHz transistor ph22 MWS11-PH22-CS h bridge CSP	PDF
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original		PDF
OF4455 Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P Text: Philips Semiconductors Product Discontinuation Notice DN53 Exhibit A June 30, 2004 SEE DN53 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.	Original	Code357A3 30-Jun-04 VY27357A3 OF4455 OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P	PDF

TRANSISTOR PH22 Search Results

TRANSISTOR PH22 Result Highlights (5)

TRANSISTOR PH22 Datasheets Context Search

ph2222a

BP317

PH2222A

transistor p8

PH2226-110M

transistor f 255

7z transistor

PH2907A

PH2907A

PH2907A

BT816

Untitled

Untitled

PH2226-110M

Untitled

TRANSISTOR BC 448 smd

993 395 pnp npn

Untitled

Untitled

lc 945 p transistor NPN

ph2222

transistor ph22

BGU7073

OF4455