DFN3020B-8
Abstract: diodes transistor marking k2 dual
Text: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage -140mV max @ -1A
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ZXTPS717MC
-140mV
500mV
DFN3020B-8
DS31936
DFN3020B-8
diodes transistor marking k2 dual
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage -140mV max @ -1A
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ZXTPS717MC
-140mV
500mV
DFN3020B-8
DS31936
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IC 630
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •
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ZXTC6717MC
100mV
-140mV
DS31926
IC 630
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •
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ZXTC6717MC
100mV
-140mV
DS31926
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Untitled
Abstract: No abstract text available
Text: ZUMT717 12V PNP POWER SWITCHING TRANSISTOR IN SOT323 Features Mechanical Data • • • • • BVCEO > -12V IC = -1.25A Continuous Collector Current ICM = -3A Peak Pulse Current Low Saturation Voltage VCE sat < -215mV @ IC = -1A RCE(SAT) = 150mΩ for a Low Equivalent On-Resistance
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ZUMT717
OT323
-215mV
J-STD-020
500mW
ZUMT617
DS33339
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DFN2020B-3
Abstract: ZXTP717MA ZXTP717MATA sot23 transistor marking y2
Text: A Product Line of Diodes Incorporated ZXTP717MA 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > -12V IC = -4A Continuous Collector Current Low Saturation Voltage -140mV max @ -1A
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ZXTP717MA
-140mV
AEC-Q101
DFN2020B-3
DS31881
DFN2020B-3
ZXTP717MA
ZXTP717MATA
sot23 transistor marking y2
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP717MA 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > -12V IC = -4A Continuous Collector Current Low Saturation Voltage -140mV max @ -1A
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ZXTP717MA
-140mV
AEC-Q101
DFN2020B-3
DS31881
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IC 630
Abstract: marking DA1
Text: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance
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ZXTC6717MC
100mV
-140mV
DS31926
IC 630
marking DA1
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTD6717E6 ADVANCE INFORMATION COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26 Features & Benefits Mechanical Data NPN Transistor • BVCEO > 15V • IC = 1.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A
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ZXTD6717E6
100mV
-140mV
AEC-Q10knowledge
DS33653
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LTC1172
Abstract: CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 FMMT618 push pull converter 70V motor controller IRF830 inverter irf840
Text: Application Note 12 Issue 2 January 1996 The FMMT718 Range, Features and Applications Replacing SOT89, SOT223 and D-Pak Products with High Current SOT23 Bipolar Transistors. David Bradbury Neil Chadderton Designers of surface mount products wishing to drive loads with currents
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FMMT718
OT223
FMMT618/718
FMMT618
FMMT619
BCP56
FMMT619s,
LTC1172
CTX110092
12v DC SERVO MOTOR CONTROL circuit 2A
h bridge irf840 inverter
transistor npn 12V 1A Collector Current
Zetex AN12
push pull converter 70V
motor controller IRF830
inverter irf840
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12W Sot23
Abstract: ZTX796A transistor pnp 12v 1a fzt90a ZTX90A voltage regulator sot23-6 1.5A 8 pin ic used in laptop transistor Comparison Tables laptop power regulator ic buck converter SOT23-6
Text: Application Note 26 Fast charging batteries with Zetex high current PNP transistors and benchmarq controller ICs Neil Chadderton Introduction Fast charge controller ICs The advances of digital technology and a waiting market have created a huge demand for portable products including cellular
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transistor Comparison Tables
Abstract: ZTX950 ZTX796A ZTX951 Zetex 12W Sot23 zetex fzt788b ZETEX ZBD949 fzt788b 1N4148 1N5820
Text: Application Note 26 Issue 1 April 1996 Fast Charging Batteries with Zetex High Current PNP Transistors and Benchmarq Controller ICs Neil Chadderton Introduction Fast Charge Controller ICs The advances of digital technology and a waiting market have created a huge
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ZTX949
320mV
A/300mA
ZTX951
300mV
A/400mA
ZTX788B
ZTX976A,
ZTX950
OT223
transistor Comparison Tables
ZTX796A
ZTX951 Zetex
12W Sot23
zetex fzt788b
ZETEX ZBD949
fzt788b
1N4148
1N5820
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2SA1488
Abstract: 2SA1488A 2SC3851A transistor pnp 12v 1a
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1488A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·DC Current Gain: hFE= 40(Min)@ IC= -1A ·Complement to Type 2SC3851A APPLICATIONS ·Designed for audio and general purpose applications.
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2SA1488A
2SC3851A
-25mA;
2SA1488
2SA1488A
2SC3851A
transistor pnp 12v 1a
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2SC3851
Abstract: transistor pnp VCEO 12V Ic 1A 2SA1488 transistor pnp 12v 1a
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1488 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·DC Current Gain: hFE= 40(Min)@ IC= -1A ·Complement to Type 2SC3851 APPLICATIONS ·Designed for audio and general purpose applications.
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2SA1488
2SC3851
-25mA;
2SC3851
transistor pnp VCEO 12V Ic 1A
2SA1488
transistor pnp 12v 1a
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2SB1382
Abstract: transistor 12v 8A 2SD2082 pnp darlington VCE 120V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA)
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-120V
-16mA)
2SD2082
-16mA
-120V
-16mA,
2SB1382
transistor 12v 8A
2SD2082
pnp darlington VCE 120V
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2sb1383
Abstract: 2sd2083 transistor IC 12A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083
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-120V
2SD2083
-24mA
-120V,
-24mA;
2sb1383
2sd2083
transistor IC 12A
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2SC4381
Abstract: 2SA1667 driver transistor hfe 60
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4381 APPLICATIONS
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2SA1667
-150V
2SC4381
-25mA
-150V
2SC4381
2SA1667
driver transistor hfe 60
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2sd2083
Abstract: 2SB1383 transistor 2sd2083 2sb1383 equivalent equivalent 2sb1383 transistor IC 12A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083
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-120V
2SD2083
-24mA
-120V,
-24mA;
2sd2083
2SB1383
transistor 2sd2083
2sb1383 equivalent
equivalent 2sb1383
transistor IC 12A
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2SD2389 power transistor
Abstract: 2SD2389 audio Darlington 6A 2SB1559 transistor 2SB1559
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2389 APPLICATIONS
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2SD2389
-160V;
2SD2389 power transistor
2SD2389
audio Darlington 6A
2SB1559
transistor 2SB1559
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2SA1667
Abstract: 2SC4381
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4381 APPLICATIONS
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2SA1667
-150V
2SC4381
-25mA
-150V
2SA1667
2SC4381
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2SA1668
Abstract: 2SC4382 transistor 2SA1668 2sa1668 transistor pnp 200v 2sa166
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1668 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4382 APPLICATIONS
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2SA1668
-200V
2SC4382
-25mA
-200V
2SA1668
2SC4382
transistor 2SA1668
2sa1668 transistor
pnp 200v
2sa166
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Untitled
Abstract: No abstract text available
Text: , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA699A Silicon PNP Power Transistor DESCRIPTION • High Collector Current -lc= -2A • Collector-Emitter Breakdown Voltage: V(BR)CEO= -40V(Min)
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2SA699A
2SC1226A
O-220C
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p04 sot223
Abstract: marking P04 P04 transistor DN200P DP200P
Text: DP200P Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.3V Typ. @IC /IB =-1A/-50mA) • Suitable for low voltage large current drivers • Excellent hFE linearity • Complementary pair with DN200P
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DP200P
-1A/-50mA)
DN200P
OT-223
KST-7001-000
-100mA
-50mA
p04 sot223
marking P04
P04 transistor
DN200P
DP200P
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ZVN4306A TO-5
Abstract: ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v
Text: Application Note 18 Issue 1 March 1996 Power MOSFET Gate Driver Circuits using High Current Super-β Transistors 6A Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing Neil Chadderton The pow er M OS F ET is c omm only presented and regarded as a voltage
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100mA/div.
50ns/div.
x15mm
FMMT618/718
700mW.
500mA/div.
100ns/div.
ZVN4306A TO-5
ZTX618
power supply IRF830 APPLICATION
mosfet driver with npn transistor
high gain PNP POWER TRANSISTOR SOT23
npn high voltage transistor 500v sot23
zvn4306
AN18
irf830 datasheet
pnp 500v
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