TRANSISTOR PNP 30V 2A 1W Search Results

TRANSISTOR PNP 30V 2A 1W Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR PNP 30V 2A 1W Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	PDF	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTA1273 TO-92L TRANSISTOR（PNP） FEATURES Power dissipation PCM: 1W （Tamb=25℃） Collector current ICM: -2A Collector-base voltage V BR CBO: -30V Operating and storage junction temperature range	Original	PDF	O-92L KTA1273 O-92L -10mA, 270TYP 050TYP
2224B Abstract: 2N2907 PNP Transistor to 92 transistor pnp 30V 2A 1W 1N4148 75V 150mA Diodes 2N2907 PNP Transistor TRANSISTOR pnp 0.15W 2N2907 LT1123 LT1123CZ MJE1123 Text: LT1123 Low Dropout Regulator Driver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Extremely Low Dropout Low Cost Fixed 5V Output, Trimmed to ±1% 700µA Quiescent Current 3-Pin TO-92 Package 1mV Line Regulation 5mV Load Regulation Thermal Limit	Original	PDF	LT1123 LT1123 125mA 125ise 2224B 2N2907 PNP Transistor to 92 transistor pnp 30V 2A 1W 1N4148 75V 150mA Diodes 2N2907 PNP Transistor TRANSISTOR pnp 0.15W 2N2907 LT1123CZ MJE1123
2SB772D Abstract: transistor pnp 30V 2A 1W transistor pnp 30V 1A 1W power ic 5v 1A 034 Text: DC COMPONENTS CO., LTD. 2SB772D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Pinning	Original	PDF	2SB772D O-126ML -20mA, 2SB772D transistor pnp 30V 2A 1W transistor pnp 30V 1A 1W power ic 5v 1A 034
transistor pnp 30V 2A 1W Abstract: transistor pnp 30V 1A 1W 2SB772 2SB77 Text: DC COMPONENTS CO., LTD. 2SB772 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126 Pinning .304 7.72	Original	PDF	2SB772 O-126 -20mA, transistor pnp 30V 2A 1W transistor pnp 30V 1A 1W 2SB772 2SB77
2224B Abstract: 016W LT1123 LT1123CST LT1123CZ MJE1123 RUR67B1CB TA03 2N2907 PNP Transistor to 92 TRANSISTOR pnp 0.15W Text: LT1123 Low Dropout Regulator Driver U FEATURES • DESCRIPTIO The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,	Original	PDF	LT1123 125mA LT1083/4/5 25VREF LT1117 800mA OT-223 LT1121 2224B 016W LT1123 LT1123CST LT1123CZ MJE1123 RUR67B1CB TA03 2N2907 PNP Transistor to 92 TRANSISTOR pnp 0.15W
Untitled Abstract: No abstract text available Text: LT1123 Low Dropout Regulator Driver FEATURES DESCRIPTIO U The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,	Original	PDF	LT1123 125mA LT1083/4/5 25VREF LT1117 800mA OT-223 LT1121
2N2907 PNP Transistor to 92 Abstract: pnp marking 3W 2224B 1N4148 75V 150mA Diodes 2N2907 PNP Transistor 2n2907 TRANSISTOR PNP LT1123 LT1123CST LT1123CZ MJE1123 Text: LT1123 Low Dropout Regulator Driver U FEATURES DESCRIPTIO The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,	Original	PDF	LT1123 125mA LT1083/4/5 25VREF LT1117 800mA OT-223 LT1121 2N2907 PNP Transistor to 92 pnp marking 3W 2224B 1N4148 75V 150mA Diodes 2N2907 PNP Transistor 2n2907 TRANSISTOR PNP LT1123 LT1123CST LT1123CZ MJE1123
fc1a-cla Abstract: PFA-1A54A PF2-CLA PFA-1A51 cable PFA-1A11 PFA-1A51 FC1A-C1A1E relay 12v 220v i/o FC1A-C2A1E relay 12v dc Text: U905 Catalog Section A note from IDEC: Due to continuous product improvements, specifications are subject to change without notice. For up-to-date information, or to request a full copy of this catalog, please visit us at www.idec.com Programmable Logic Controllers	Original	PDF	CP11T CP12/13 fc1a-cla PFA-1A54A PF2-CLA PFA-1A51 cable PFA-1A11 PFA-1A51 FC1A-C1A1E relay 12v 220v i/o FC1A-C2A1E relay 12v dc
Transistor 2sb772 Abstract: 2SB772 HS772 VCEO-30V 2SB772 TRANSISTOR Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 对应国外型号 2SB772 HS772 █ 主要用途 █ 外形尺寸及引脚排列音频放大开关功率放大 █ 极限值（Ta=25℃） TO-126 T stg ——贮存温度………………………………… -55~150℃	Original	PDF	2SB772 HS772 O-126 -10VIE Transistor 2sb772 2SB772 HS772 VCEO-30V 2SB772 TRANSISTOR
transistor 772 Abstract: 772 transistor H772 2SB772HS772H772 H*772 2SB772 HS772 Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 772 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图芯片尺寸：4 英寸（100mm）芯片代码：A100AJ-00 芯片厚度：240±20µm 管芯尺寸：1000x1000µm 2 焊位尺寸：B 极 215×215µm 2；E 极 210×210µm 2	Original	PDF	100mm A100AJ-00 2SB772HS772H772 O-126TO-126ML -10VIE transistor 772 772 transistor H772 2SB772HS772H772 H*772 2SB772 HS772
SONY APS 252 power supply Abstract: 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor Text: Power−Supply Cookbook Maxim Power Supply Cookbook Compiled: November 2010 Available at: http://www.maxim−ic.com/cookbook/ Maxim has developed power supplies for a wide range of applications. Choose the specifications that most closely meet your needs. Then view a circuit design, complete with schematic diagram and	Original	PDF	CDRH6D28-100 MAX1701 100uF 100pF 560pF NDC632P QS03L 220uF SONY APS 252 power supply 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor
HSB772 Abstract: H*772 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6605 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 1/4 HSB772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.	Original	PDF	HE6605 HSB772 HSB772 O-126ML H*772
H*772 Abstract: HT772 transistor pnp 30V 2A 1W TRANSISTOR ht772 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200209 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 1/4 HT772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HT772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.	Original	PDF	HT200209 HT772 HT772 O-126 H*772 transistor pnp 30V 2A 1W TRANSISTOR ht772

TO202N Abstract: NTE272 NTE273 ic 555 audio amplifiers Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.	Original	PDF	NTE272 NTE273 200mA 500mA NTE273 O202N TO202N NTE272 ic 555 audio amplifiers
Complementary Darlington Audio Power Amplifier Abstract: PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 NTE273 application note ic 555 Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.	Original	PDF	NTE272 NTE273 200mA 500mA NTE273 O202N Complementary Darlington Audio Power Amplifier PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 application note ic 555
Untitled Abstract: No abstract text available Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.	Original	PDF	NTE272 NTE273 200mA 500mA NTE273
transistor pnp 30V 2A 1W Abstract: TS650CS 40v input to 5V 3A converter SOP8 transistor pnp 30V 1A 1W SK34A TS650 TSB1386CY SOP8 Package Text: TS650 Buck Switching Regulator Pin assignment: 1. Out 2. P.Gnd 3. CT 4. Gnd 5. FB 6. Vcc 7. Comp. 8. Enable Supply Voltage Range 3 V to 30V Output Driving Current 500mA Oscillator Frequency up to 100KHz General Description The TS650 is a monolithic buck switching regulator, it is consist of an voltage reference, error amplifier, current limited set	Original	PDF	TS650 500mA 100KHz TS650 100KHz SK34A: A/40V TSB1386CY: transistor pnp 30V 2A 1W TS650CS 40v input to 5V 3A converter SOP8 transistor pnp 30V 1A 1W SK34A TSB1386CY SOP8 Package
H.772 Abstract: H772 H*772 HT772 TRANSISTOR ht772 Text: HI-SINCERITY Spec. No. : HT200209 Issued Date : 1993.05.15 Revised Date : 2005.12.02 Page No. : 1/5 MICROELECTRONICS CORP. HT772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HT772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.	Original	PDF	HT200209 HT772 HT772 O-126 183oC 217oC 260oC H.772 H772 H*772 TRANSISTOR ht772
H772 Abstract: HT772 H*772 TRANSISTOR ht772 H. 772 H.772 mh772 ht77 Text: HI-SINCERITY Spec. No. : HT200209 Issued Date : 1993.05.15 Revised Date : 2006.02.20 Page No. : 1/5 MICROELECTRONICS CORP. HT772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HT772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.	Original	PDF	HT200209 HT772 HT772 O-126 183oC 217oC 260oC 10sec H772 H*772 TRANSISTOR ht772 H. 772 H.772 mh772 ht77
transistor pnp 30V 2A 1W Abstract: 2SA928 transistor 2SA928 5V 2A PNP transistor 500ma 30v Text: 2SA928 PNP SILICON TRANSISTOR DESCRIPTION TO-92B 2SA928 is PNP silicon planar transistor dedesigned for audio power amplifier. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation	OCR Scan	PDF	2SA928 O-92B 500mA transistor pnp 30V 2A 1W transistor 2SA928 5V 2A PNP transistor 500ma 30v
Untitled Abstract: No abstract text available Text: 2SA928 PNP SILICON TRANSISTOR DESCRIPTION TO-92B 2SA928 is PNP silicon planar transistor dedesigned for audio power amplifier. ECB ELECTRO-OPTICAL CHARACTERISTICS SYMBOL PARAMETER BVCBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage BVCEO	OCR Scan	PDF	2SA928 O-92B 2SA928 500mA
2SA928 Abstract: transistor pnp 30V 2A 1W transistor 2SA928 Text: IVI^K'U L S £ \y ¿ 0 PNP SILICON TRANSISTOR DESCRIPTION TO-92B 2SA928 is PNP silicon planar transistor dedesigned for audio power amplifier. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	PDF	2SA928 O-92B 500mA transistor pnp 30V 2A 1W transistor 2SA928
transistor 2SA928 Abstract: 2SA928 transistor pnp 30V 2A 1W Text: MICRO 2SA928 PNP SILICON TRANSISTOR DESCRIPTION TO-92B 2SA928 is PNP silicon planar transistor dedesigned for audio power amplifier. ECB Ta=25°C CONDITIONS MIN TYP MAX UNIT IC=100^A JE=0 30 V IC=10mA IB=0 30 V IE=lmA IC=0 5 nA VCB=30V IE=0 100 100 nA VEB=5V IC=0	OCR Scan	PDF	O-92B 2SA928 2SA928 500mA transistor 2SA928 transistor pnp 30V 2A 1W

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TRANSISTOR PNP 30V 2A 1W Search Results

TRANSISTOR PNP 30V 2A 1W Result Highlights (5)

TRANSISTOR PNP 30V 2A 1W Datasheets Context Search

Diode 400V 5A

Untitled

2224B

2SB772D

transistor pnp 30V 2A 1W

2224B

Untitled

2N2907 PNP Transistor to 92

fc1a-cla

Transistor 2sb772

transistor 772

SONY APS 252 power supply

HSB772

H*772

TO202N

Complementary Darlington Audio Power Amplifier

Untitled

transistor pnp 30V 2A 1W

H.772

H772

transistor pnp 30V 2A 1W

Untitled

2SA928

transistor 2SA928