TRANSISTOR PNP VCBO 25V Search Results

TRANSISTOR PNP VCBO 25V Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N

TRANSISTOR PNP VCBO 25V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE395 Abstract: No abstract text available Text: NTE395 Silicon PNP Transistor Wide Band Linear Amplifier Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V	Original	NTE395 110mA 800MHz 860MHz, 200MHz NTE395	PDF
2AK TRANSISTOR Abstract: PNP Epitaxial Silicon Transistor sot-23 MMBT3906K marking 2AK MMBT3906K 2ak Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage	Original	MMBT3906K MMBT3906K OT-23 2AK TRANSISTOR PNP Epitaxial Silicon Transistor sot-23 marking 2AK MMBT3906K 2ak	PDF
"PNP Transistor" Abstract: germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor Text: NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V	Original	NTE226 NTE226 200mA 200mA, "PNP Transistor" germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor	PDF
Untitled Abstract: No abstract text available Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage	Original	MMBT3906K MMBT3906K OT-23	PDF
Untitled Abstract: No abstract text available Text: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: V ceo =2N41 25: 30V 2N4126: 25V * Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO -3 0	OCR Scan	2N4125/4126 2N4126: 10fiA, 100MHz	PDF
FJX733 Abstract: No abstract text available Text: FJX733 FJX733 Low Frequency Amplifier 3 • Collector-Base Voltage VCBO= -60V • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage	Original	FJX733 FJX945 OT-323 FJX733	PDF
FJX733 Abstract: FJX945 Text: FJX733 FJX733 Low Frequency Amplifier 3 • Collector-Base Voltage VCBO= -60V • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage	Original	FJX733 FJX945 OT-323 FJX733 FJX945	PDF
Untitled Abstract: No abstract text available Text: PNP EPITAXIAL SILICON TRANSISTOR KSA733 LOW FREQUENCY AMPLIFIER • Collector-Base Voltage VCBO= -60V • Complement to KSC945 ABSOLUTE MAXIMUM RATINGS TA =251! C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	KSA733 KSC945	PDF
Untitled Abstract: No abstract text available Text: KSA642 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER TO-92 • Collector-Base Voltage: VCBO= -30V • Low Collector-Emitter Saturation Voltage: VCE sat = -0.15V(TYP) • Complement to KSC184 ABSOLUTE MAXIMUM RATINGS (TA =25°°C) Characteristic	Original	KSA642 KSC184	PDF
BC327 Abstract: BC328 BC327 equivalent transistor BC328 BC327 transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE Parameter Value VCBO Collector-Base Voltage	Original	BC327/ BC328 BC327 -100mA -300mA -500mA, -50mA BC327 BC328 BC327 equivalent transistor BC328 BC327 transistor	PDF
hFE is transistor Abstract: 2N6076 Text: 2N6076 PNP Small Signal Transistor Features • BVceo .25V Min • hFE . 100(Min) @ Vce=10V, Ic=10mA • Pb free Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Unit VCBO Collector-Base Voltage Parameter -25 V VCEO Collector-Emitter Voltage	Original	2N6076 2N6076 hFE is transistor	PDF
KSC3488 Abstract: No abstract text available Text: KSA1378 KSA1378 Low Frequency Power Amplifier • Collector Power Dissipation : PC= 300mW • Complement to KSC3488 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO	Original	KSA1378 300mW KSC3488 O-92S PW10ms, cycle50% Volt000 KSA1378 KSA1378GBU KSC3488	PDF
KSA1150 Abstract: KSC2710 Text: KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter	Original	KSA1150 300mW KSC2710 O-92S PW350ms, cycle50% KSA1150 KSC2710	PDF
KSA1378 Abstract: KSC3488 Text: KSA1378 KSA1378 Low Frequency Power Amplifier • Collector Power Dissipation : PC= 300mW • Complement to KSC3488 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO	Original	KSA1378 300mW KSC3488 O-92S PW10ms, cycle50% KSA1378 KSC3488	PDF

KSA1150 Abstract: KSC2710 Text: KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter	Original	KSA1150 300mW KSC2710 O-92S PW350ms, cycle50% KSA1150 KSC2710	PDF
2SB0790 Abstract: 2SB790 2SD969 Text: Transistor 2SB0790 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0969 (2SD969) Unit: mm 2.5±0.1 (Ta=25˚C) (1.0) (0.85) Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage	Original	2SB0790 2SB790) 2SD0969 2SD969) 2SB0790 2SB790 2SD969	PDF
KSA1378 Abstract: KSC3488 Text: KSA1378 KSA1378 Low Frequency Power Amplifier • Collector Dissipation : PC= 300mW • Complement to KSC3488 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage	Original	KSA1378 300mW KSC3488 O-92S PW10ms, cycle50% KSA1378 KSC3488	PDF
Untitled Abstract: No abstract text available Text: KSA642 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER • Col lector-Base Voltage: VCbo= -30V • Low C ollector-E m itter Saturation Voltage: VCE sat = -0.15V(TYP) • C om plem ent to KSC184 ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic	OCR Scan	KSA642 KSC184	PDF
KSC2710 Abstract: No abstract text available Text: KSA1150 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSC2710 • Collector Dissipation: PC = 300mW ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC (DC) IC(Pulse) PC TJ T STG Collector-Base Voltage	Original	KSA1150 KSC2710 300mW O-92S 350ms, cycle50% KSC2710	PDF
BC369 Abstract: No abstract text available Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC369 ISSUE 1 SEPT 93 FEATURES * 20 Volt VCEO * 1 Amp continuous current * Ptot= 800 mW E C B TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage	Original	BC369 -10mA, -100mA* -500mA, 100MHz BC369	PDF
2SB0779 Abstract: 2SB779 Text: Transistor 2SB0779 2SB779 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 0.40+0.10 ñ0.05 • Absolute Maximum Ratings Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V Emitter to base voltage	Original	2SB0779 2SB779) 2SB0779 2SB779	PDF
KSC3488 Abstract: No abstract text available Text: KSA1378 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSC3488 • Collector Dissipation Pc” 300mW ABSOLUTE MAXIMUM RATINGS TA25t: Symbol Rating Unit VcBO VcEO Veo lc(DC) lc (Pulse) Pc Tj T stg -30 -25 -5 -300 -500 300	OCR Scan	KSA1378 KSC3488 300mW -50mA -300mA, -30mA KSC3488	PDF
2SB1378 Abstract: 2SD1996 2501 Text: Transistor 2SB1378 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1996 Unit: mm 0.15 1.0 14.5±0.5 +0.1 Ta=25˚C 0.45–0.05 2.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage	Original	2SB1378 2SD1996 2SB1378 2SD1996 2501	PDF
4102 transistor Abstract: 2SB790 2SD969 2SD96 Text: Transistor 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD969 Unit: mm 6.9±0.1 1.0 0.85 Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V Emitter to base voltage	Original	2SB790 2SD969 4102 transistor 2SB790 2SD969 2SD96	PDF

TRANSISTOR PNP VCBO 25V Search Results

TRANSISTOR PNP VCBO 25V Result Highlights (5)

TRANSISTOR PNP VCBO 25V Datasheets Context Search

NTE395

2AK TRANSISTOR

"PNP Transistor"

Untitled

Untitled

FJX733

FJX733

Untitled

Untitled

BC327

hFE is transistor

KSC3488

KSA1150

KSA1378

KSA1150

2SB0790

KSA1378

Untitled

KSC2710

BC369

2SB0779

KSC3488

2SB1378

4102 transistor