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    TRANSISTOR PNP VCEO 400V Search Results

    TRANSISTOR PNP VCEO 400V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PNP VCEO 400V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor SOT23 4d

    Abstract: MMBTA94L MMBTA94 MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low collector-Emitter saturation voltage „ APPLICATIONS * Telephone switching


    Original     		MMBTA94 -400V 350mW MMBTA94L MMBTA94G MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G-AE3-R OT-23 QW-R206-008 transistor SOT23 4d MMBTA94L MMBTA94 MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G PDF

    transistor SOT23 4d

    Abstract: MMBTA94L MMBTA94L-AE3-R MMBTA94 MMBTA94-AE3-R marking 4d
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low Collector-Emitter Saturation Voltage „ APPLICATIONS * Telephone Switching


    Original     		MMBTA94 -400V 350mW MMBTA94L MMBTA94G MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G-AE3-R OT-23 QW-R206-008 transistor SOT23 4d MMBTA94L MMBTA94L-AE3-R MMBTA94 MMBTA94-AE3-R marking 4d PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =350mW *Low collector-Emitter saturation voltage 2 1 APPLICATIONS *Telephone switching *High voltage switch


    Original     		MMBTA94 -400V 350mW OT-23 QW-R206-008 PDF

    TO-92 VCEO400V

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage „ ORDERING INFORMATION Ordering Number


    Original     		MPSA94 -400V 625mW MPSA94L-AB3-R MPSA94G-AB3-R MPSA94L-T92-B MPSA94G-T92-B MPSA94L-T92-K MPSA94G-T92-K MPSA94L-T92-R TO-92 VCEO400V PDF

    transistor SOT23 4d

    Abstract: pnp transistor 300v sot23 pnp low saturation transistor sot23
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: PC MAX =350mW *Low collector-Emitter saturation voltage APPLICATIONS 1 *Telephone switching


    Original     		MMBTA94 -400V 350mW OT-23 MMBTA94L MMBTA94-AE3-6-R MMBTA94L-AE3-6-R OT-23 MMBTA94L-AE3-6-R transistor SOT23 4d pnp transistor 300v sot23 pnp low saturation transistor sot23 PDF

    sot23 4d

    Abstract: transistor marking 4D MMBTA94
    Text: UTC MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =350mW *Low collector-Emitter saturation voltage 2 1 APPLICATIONS *Telephone switching *High voltage switch


    Original     		MMBTA94 -400V 350mW OT-23 QW-R206-008 sot23 4d transistor marking 4D MMBTA94 PDF

    KSA1625

    Abstract: TO-92 VCEO400V
    Text: UTC KSA1625 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		KSA1625 -400V 625mW QW-R201-067 KSA1625 TO-92 VCEO400V PDF

    PZTA94G-AA3-R

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD PZTA94 Preliminary PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage „ ORDERING INFORMATION Ordering Number


    Original     		PZTA94 -400V 625mW PZTA94L-AA3-R PZTA94G-AA3-R OT-223 QW-R207-026 PDF

    MPSA94L

    Abstract: UTC MPSA94L MPSA94
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage Lead-free: MPSA94L Halogen-free: MPSA94G


    Original     		MPSA94 -400V 625mW MPSA94L MPSA94G MPSA94-AB3-R MPSA94-T92-B MPSA94-T92-K MPSA94L-AB3-R MPSA94L-T92-B MPSA94L UTC MPSA94L MPSA94 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		MPSA94 -400V 625mW PDF

    MPSA94

    Abstract: No abstract text available
    Text: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		MPSA94 -400V 625mW QW-R201-021 MPSA94 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


    Original     		MPSA94 -400V 625mW QW-R201-021 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • High Collector-Emitter Voltage: VCEo = - 400V • Low Collector-Emltter Saturation Voltage • Complement to MPSA44 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage


    OCR Scan     		KSP94 MPSA44 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 3512B _ 2SA1786/2SC4646 2SA1786:PNP Epitaxial Planar Silicon Transistor 2SC4646:NFN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic = 2A • High breakdown voltage (Vceo = 400V)


    OCR Scan     		3512B 2SA1786/2SC4646 2SA1786 2SC4646 2SA1786 12894TH AX-8287/4231MH 5180TA X-6912 PDF

    transistor SOT23 4d

    Abstract: MMBTA94 MMBTA94-AE3-R MMBTA94L MMBTA94L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: PC MAX =350mW *Low collector-Emitter saturation voltage APPLICATIONS 1 2 *Telephone switching *High voltage switch


    Original     		MMBTA94 -400V 350mW OT-23 MMBTA94L MMBTA94-AE3-R MMBTA94L-AE3-R transistor SOT23 4d MMBTA94 MMBTA94-AE3-R MMBTA94L MMBTA94L-AE3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: SOP8501 SOP8501 Ordering number : ENN8007 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • High breakdown voltage. VCEO≥400V Excellent hFE linearlity. Specifications


    Original     		OP8501 ENN8007 2000mm2â OP8501/D PDF

    ITR04446

    Abstract: ITR04587
    Text: SOP8501 Ordering number : ENN8007 SOP8501 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • High breakdown voltage. VCEO≥400V Excellent hFE linearlity. Specifications


    Original     		OP8501 ENN8007 VCEO400V) 2000mm2 ITR04446 ITR04587 PDF

    MMBTA94

    Abstract: MMBTA94-AE3-R MMBTA94L MMBTA94L-AE3-R MMBTA94G-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES 3 * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low collector-Emitter saturation voltage „ APPLICATIONS 2 1 SOT-23 * Telephone switching


    Original     		MMBTA94 -400V 350mW OT-23 MMBTA94L MMBTA94G MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G-AE3-R MMBTA94 MMBTA94-AE3-R MMBTA94L MMBTA94L-AE3-R MMBTA94G-AE3-R PDF

    KSP94

    Abstract: PNP 400V KSP44
    Text: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • High Collector-Emitter Voltage: VCEO= -400V • Low Collector-Emitter Saturation Voltage • Complement to KSP44 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector-Base Voltage


    Original     		KSP94 -400V KSP44 -300V, -400V, -10mA -50mA -100mA -10mA, -50mA, KSP94 PNP 400V KSP44 PDF

    transistor on 4409

    Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
    Text: Ordering num ber:EN4409 2SA1830/2SC4734 2SA1830 : PNP Epitaxial Planar Silicon Transistor No.4409 2SC4734 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • Large current capacity Ic = 2A . • High breakdown voltage (Vceo = 400V).


    OCR Scan     		EN4409 2SA1830/2SC4734 2SA1830 2SC4734 2SA1830/2SC4734 transistor on 4409 on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1 PDF

    2SA1784

    Abstract: 2SA1781
    Text: Ordering number:EN3520 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .


    Original     		EN3520 2SA1784/2SC4644 VCEO400V) 2SA17814/2SC4644] 2SA1784 2SA1784 2SA1781 PDF

    2SC4615

    Abstract: 2044B 2SA1772 X-6468 x6468
    Text: Ordering number:EN3398A 2SA1772 : PNP Epitaxial Planar Silicon Transistor 2SC4615 : NPN Triple Diffused Planar Silicon Transistor 2SA1772/2SC4615 High-Voltage Driver Applications Features • Large current capacity IC=1A . · High breakdown votlage (VCEO≥400V).


    Original     		EN3398A 2SA1772 2SC4615 2SA1772/2SC4615 VCEO400V) 2045B 2SA1772/2SC4615] 2044B 2SC4615 2044B 2SA1772 X-6468 x6468 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN3511A _ 2SA1785/2SC4645 2SA1785:PNP Epitaxial Planar Silicon Transistor 2SC4645:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications F e a tu re s •Large current capacity Ic = 1A • High breakdown voltage (Vceo = 400V)


    OCR Scan     		EN3511A 2SA1785/2SC4645 2SA1785 2SC4645 2SA1785 12894TH AX-8287/517OTA 2SA1785/2 SC4645 PDF

    TO-92 VCEO400V

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 1 FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage SOT-89 1 TO-92 *Pb-free plating product number: MPSA94L


    Original     		MPSA94 -400V 625mW OT-89 MPSA94L MPSA94-AB3-R MPSA94-T92-B MPSA94-T92-K TO-92 VCEO400V PDF