TRANSISTOR POUT 5W Search Results

TRANSISTOR POUT 5W Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR POUT 5W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
sd2931-10w Abstract: marking code oz 09-Sep-2004 Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures	Original	SD2931-10 SD2931-10 SD2931 sd2931-10w marking code oz 09-Sep-2004	PDF
Untitled Abstract: No abstract text available Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures	Original	SD2931-10 SD2931-10 SD2931 SD2931	PDF
SD2942 Abstract: RG316-25 marking code r10 surface mount diode Wire wound resistor 5W 200B 700B RG316 SD2932 ST40 SD2942 equivalent Text: SD2942 RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed	Original	SD2942 SD2942 SD2932. RG316-25 marking code r10 surface mount diode Wire wound resistor 5W 200B 700B RG316 SD2932 ST40 SD2942 equivalent	PDF
Arco 423 Abstract: choke vk200 sd2931-10w Text: SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet — production data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower	Original	SD2931-10 SD2931-10 SD2931 Arco 423 choke vk200 sd2931-10w	PDF
MARCON NH capacitor Abstract: UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead Text: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is	OCR Scan	SD2922 SD2922 PCI2170 020876A MARCON NH capacitor UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead	PDF
MS2217 Abstract: No abstract text available Text: MS2217 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • · · · · · 1.2 – 1.4 GHz 28 VOLTS POUT = 30 WATTS GP = 7.4 dB MINIMUM INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The MS2217 is a NPN silicon bipolar transistor designed for	Original	MS2217 MS2217 1000mS	PDF
mosfet HF amplifier Abstract: BLF278 mosfet HF amplifier power amplifier blf278 BLF278 equivalent res HF 10-0130 transistor HF band power amplifier BLF278 mosfet HF applications class-A amplifier RES Ingenium HF10-0130 Text: HF 10-0130 10W HF Amplifier Designed for HF band, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability • • • • • • • • 0.5 ÷ 32 MHz 24 / 50 Volts Input / Output 50 Ohm Pout : 10 W min	Original	BLF278 GR00061 mosfet HF amplifier BLF278 mosfet HF amplifier power amplifier blf278 BLF278 equivalent res HF 10-0130 transistor HF band power amplifier BLF278 mosfet HF applications class-A amplifier RES Ingenium HF10-0130	PDF
BLF278 mosfet HF amplifier Abstract: mosfet HF amplifier BLF278 equivalent HF10-0130 power amplifier blf278 hf power transistor mosfet BLF278 res HF 10-0130 transistor transistor cross ref HF band power amplifier Text: HF 10-0130 10W HF Amplifier Designed for HF band, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability • • • • • • • • 0.5 ÷ 32 MHz 24 / 50 Volts Input / Output 50 Ohm Pout : 10 W min	Original	BLF278 GR00061 BLF278 mosfet HF amplifier mosfet HF amplifier BLF278 equivalent HF10-0130 power amplifier blf278 hf power transistor mosfet res HF 10-0130 transistor transistor cross ref HF band power amplifier	PDF
5W 6.8 ohm k ceramic resistor Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r Text: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is	Original	SD2922 SD2922 5W 6.8 ohm k ceramic resistor 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r	PDF
resistor 680 ohm Abstract: No abstract text available Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for	Original	SD2931 SD2931 resistor 680 ohm	PDF
5W 6.8 ohm k ceramic resistor Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor GC812 neosid* 10k mount chip transistor 13W SME63T10RM variable RESISTANCE 1 M OHM resistor 560 ohm Text: SD2922  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is	Original	SD2922 SD2922 5W 6.8 ohm k ceramic resistor 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor GC812 neosid* 10k mount chip transistor 13W SME63T10RM variable RESISTANCE 1 M OHM resistor 560 ohm	PDF
Power Transformer EE-19 Abstract: EE-19 transformer arco 404 SD2931 VK200 resistor 680 ohm 16-100pF Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for	Original	SD2931 SD2931 Power Transformer EE-19 EE-19 transformer arco 404 VK200 resistor 680 ohm 16-100pF	PDF
SD2931 Abstract: VK200 resistor 680 ohm Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for	Original	SD2931 SD2931 VK200 resistor 680 ohm	PDF
transistor marking code H11S Abstract: H11S marking CODE H11S rf transistor mar 8 RA05H9595M RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.	Original	RA05H9595M 952-954MHz RA05H9595M 954-MHz transistor marking code H11S H11S marking CODE H11S rf transistor mar 8 RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w	PDF

882 transistor Abstract: omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture Text: PH2323-5 CW Power Transistor 5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors	Original	PH2323-5 882 transistor omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture	PDF
Untitled Abstract: No abstract text available Text: TGF3020-SM 5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Telemetry C-band radar Communications Test instrumentation Wideband amplifiers 5.8GHz ISM Functional Block Diagram Product Features • • • • • •	Original	TGF3020-SM TGF3020-SM	PDF
H11S Abstract: RA05H8693M RA05H8693M-101 MOSFET Amplifier Module W3015 Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H8693M RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range. The battery can be connected directly to the drain of the	Original	RA05H8693M 866-928MHz RA05H8693M 928MHz H11S RA05H8693M-101 MOSFET Amplifier Module W3015	PDF
H11S Abstract: RA05H8693M RA05H8693M-101 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H8693M RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range.	Original	RA05H8693M 866-928MHz RA05H8693M 928MHz H11S RA05H8693M-101	PDF
f953 Abstract: H11S RA05H9595M RA05H9595M-101 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.	Original	RA05H9595M 952-954MHz RA05H9595M 954-MHz f953 H11S RA05H9595M-101	PDF
H11S Abstract: RA05H9595M RA05H9595M-101 Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.	Original	RA05H9595M 952-954MHz RA05H9595M 954-MHz H11S RA05H9595M-101	PDF
UF2805B Abstract: No abstract text available Text: UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Released; RoHS Compliant 20 Jan 11 Package Outline Features •      N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration	Original	UF2805B UF2805B	PDF
UF2805B Abstract: 1000 MHz transistor 5W Text: UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration	Original	UF2805B UF2805B 1000 MHz transistor 5W	PDF
LF2805A Abstract: J286 Text: LF2805A RF Power MOSFET Transistor 5W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration	Original	LF2805A 500-1000MHz, LF2805A J286	PDF
Untitled Abstract: No abstract text available Text: LF2805A RF Power MOSFET Transistor 5W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration	Original	LF2805A 500-1000MHz,	PDF

TRANSISTOR POUT 5W Search Results

TRANSISTOR POUT 5W Result Highlights (5)

TRANSISTOR POUT 5W Datasheets Context Search

sd2931-10w

Untitled

SD2942

Arco 423

MARCON NH capacitor

MS2217

mosfet HF amplifier

BLF278 mosfet HF amplifier

5W 6.8 ohm k ceramic resistor

resistor 680 ohm

5W 6.8 ohm k ceramic resistor

Power Transformer EE-19

SD2931

transistor marking code H11S

882 transistor

Untitled

H11S

H11S

f953

H11S

UF2805B

UF2805B

LF2805A

Untitled