TRANSISTOR Q35 Search Results

TRANSISTOR Q35 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR Q35 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
LT1185 Abstract: transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Standard 5-Lead Packages Full Remote Sense	Original	LT1185 LT1185 transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors	PDF
Untitled Abstract: No abstract text available Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA	Original	LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964	PDF
LT1185CT Abstract: LT1185 LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA	Original	LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964 LT1185CT LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK	PDF
BA2rc Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288118 288M-BIT PD48288118 BA2rc	PDF
LT1185 Abstract: LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special	Original	LT1185 LT1185 118500mA LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288118 288M-BIT PD48288118	PDF
Untitled Abstract: No abstract text available Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special	Original	LT1185 LT1185 LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 1185fd	PDF
LT1120A Abstract: lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185 LT1185C LT1185CQ LT1185I LT1185IT Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of a FET pass element with significantly less die area. High efficiency is maintained by using special	Original	LT1185 LT1185 O-220 LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 LT1120A lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185C LT1185CQ LT1185I LT1185IT	PDF
p144f Abstract: TDK EF25 BAP36 PD482 Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118-A 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288118-A 288M-BIT PD48288118-A M8E0904E p144f TDK EF25 BAP36 PD482	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288118 288M-BIT PD48288118	PDF
Untitled Abstract: No abstract text available Text: Datasheet PD48288118-A 288M-BIT Low Latency DRAM Separate I/O R10DS0157EJ0100 Rev.1.00 Feb 01, 2013 Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288118-A 288M-BIT R10DS0157EJ0100 PD48288118-A	PDF
marking code 1p Abstract: No abstract text available Text: 72QM2 R1Q3A7236ABG / R1Q3A7218ABG Series R1Q3A7236ABG R1Q3A7218ABG 72-Mbit QDR II SRAM 4-word Burst R10DS0176EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory	Original	72QM2 R1Q3A7236ABG R1Q3A7218ABG R1Q3A7218ABG 72-Mbit R1Q3A7236 152-word 36-bit R1Q3A7218 marking code 1p	PDF
Untitled Abstract: No abstract text available Text: 72QM2 R1Q3A7236ABB / R1Q3A7218ABB Series R1Q3A7236ABB R1Q3A7218ABB 72-Mbit QDR II SRAM 4-word Burst R10DS0165EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory	Original	72QM2 R1Q3A7236ABB R1Q3A7218ABB R1Q3A7218ABB 72-Mbit R1Q3A7236 152-word 36-bit R1Q3A7218	PDF
Untitled Abstract: No abstract text available Text: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor	Original	R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit R10DS0141EJ0100 R1Q3A4436RBG 304-word 36-bit R1Q3A4418RBG 608-word 18-bit	PDF

Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44324185B-A, 44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor	Original	PD44324185B-A, 44324365B-A 36M-BIT PD44324185B-A 152-word 18-bit PD44324365B-A 576-word 36-bit	PDF
PD44324185BF5-E35-FQ1 Abstract: No abstract text available Text: Datasheet PD44324185B-A μPD44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION R10DS0037EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor	Original	PD44324185B-A PD44324365B-A 36M-BIT R10DS0037EJ0100 PD44324185B-A 152-word 18-bit PD44324365B-A 576-word 36-bit PD44324185BF5-E35-FQ1	PDF
TRANSISTOR D2102 Abstract: L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS Text: TX-28/25/21MD4 Service Manual Safety Specifications Service Support Block Diagrams Parts List Service Information Adjustments Self Check Schematic Diagrams Service Hints Mechanical View Waveforms Supplementary Information This interface provides a link between the TV and	Original	TX-28/25/21MD4 TZS6EZ002 TZS7EZ006 TZS7EZ005 TRANSISTOR D2102 L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS	PDF
pot core inductor Abstract: 2N33904 2N33904 transistor MBR140P RC4391N SP-Cap/ Polymer Aluminum Capacitors RC4190 RC4391 RV4391 Stackpole ferrite Text: www.fairchildsemi.com RC4391 Inverting and Step-Down Switching Regulator Features • High performance — High switch current — 375 mA High efficiency — 70% typically • Low battery detection capability • 8-lead mini-DIP or S.O. package • Versatile —	Original	RC4391 RC4391 DS30004391 pot core inductor 2N33904 2N33904 transistor MBR140P RC4391N SP-Cap/ Polymer Aluminum Capacitors RC4190 RV4391 Stackpole ferrite	PDF
2N33904 Abstract: 2N33904 transistor pot core inductor 12 volt dc to 220 volt ac inverter schematic 2N3635 MOTOROLA NY TRANSISTOR MAKING LIST SP-Cap/ Polymer Aluminum Capacitors RC4190 RC4391 RV4391 Text: Electronics Semiconductor Division RC4391 Inverting and Step-Down Switching Regulator Features • High performance — High switch current — 375 mA High efficiency — 70% typically • Low battery detection capability • 8-lead mini-DIP or S.O. package	Original	RC4391 RC4391 DS20004391 2N33904 2N33904 transistor pot core inductor 12 volt dc to 220 volt ac inverter schematic 2N3635 MOTOROLA NY TRANSISTOR MAKING LIST SP-Cap/ Polymer Aluminum Capacitors RC4190 RV4391	PDF
Operational Transconductance Amplifier pspice Abstract: transisTOR C124 c124 transistor transistor directory cdt660 OPA660 transistor c206 transistor c202 COPA660 DEM-OPA660-3GC Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132	Original	CG22DF2) Operational Transconductance Amplifier pspice transisTOR C124 c124 transistor transistor directory cdt660 OPA660 transistor c206 transistor c202 COPA660 DEM-OPA660-3GC	PDF
2N33904 Abstract: 2N33904 transistor Stackpole ferrite MBR140P 2N3635 MOTOROLA RM4391 2n3904 npn fairchild beta Dale Resistor 7501 1N914 RC4391 Text: PRODUCT SPECIFICATION RC4391 Pin Descriptions Pin Assignments LBR 1 8 VFB Pin Number Pin Function Description LBD 2 7 VREF 1 Low Battery Resistor LBR CX 3 6 +VS 2 Low Battery Detector (LBD) 3 Timing Capacitor (CX) 4 Ground 5 External Inductor (LX) 6 +Supply Voltage (+VS)	Original	RC4391 RV4391 RM4391 DS30004391 2N33904 2N33904 transistor Stackpole ferrite MBR140P 2N3635 MOTOROLA RM4391 2n3904 npn fairchild beta Dale Resistor 7501 1N914 RC4391	PDF
IF1320 Abstract: No abstract text available Text: B 30 9 -9 7 IF1320 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN AMPLIFIER Absolute maximum ratings at TA • 25*C Reverse Gate Source & Reverse Gate Drain Voltage - 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation	OCR Scan	IF1320 NJ132L O-236 IF1320	PDF
2SK48 Abstract: transistor 2sk 100-C Text: SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR I ff I i ffl TENTATIVE INDUSTRIAL APPLICATIONS c m u l m . -ù -m tn o o Medi c a l Elec t r o n i c Equi p m e n t • ¡SfiiüíT-í- ; _ Unit in mm '052MAX. NF = &5CLB Typ. R g = 100kí3	OCR Scan	100ki) 120Hz CHARACTERISTIC120 ID-450/iA Ta-251C 2SK48 transistor 2sk 100-C	PDF
transistor C711 Abstract: BY239 LLE16350X diode BY239 c711 BDT91 SC15 LTSB Text: • M m D IS C R E T E S E M IC O N D U C T O R S OÆ m S ^ iE T LLE16350X N P N silicon planar epitaxial m icrow ave pow er transistor Preliminary specification File under Discrete Sem iconductors, S C 1 5 October 1992 Philips Semiconductors PHILIPS • bb S3T 31	OCR Scan	LLE16350X 003301b 0D33G214 transistor C711 BY239 LLE16350X diode BY239 c711 BDT91 SC15 LTSB	PDF

TRANSISTOR Q35 Search Results

TRANSISTOR Q35 Result Highlights (5)

TRANSISTOR Q35 Datasheets Context Search

LT1185

Untitled

LT1185CT

BA2rc

LT1185

Untitled

Untitled

LT1120A

p144f

Untitled

Untitled

marking code 1p

Untitled

Untitled

Untitled

PD44324185BF5-E35-FQ1

TRANSISTOR D2102

pot core inductor

2N33904

Operational Transconductance Amplifier pspice

2N33904

IF1320

2SK48

transistor C711