2N5367
Abstract: AH TRANSISTOR
Text: 2N5367 R PNP SILICON TRANSISTOR TO-92B DESCRIPTION 2N 5367(R ) transistor is PNP use- in silicon general planar purpose consumer and industrial am plifier and switch i n g app 1ica t ioils . ABSOLl TÍ MAXIMUM RATINGS -Huge Ct>Ilecti >r-E'i n r '.<•*' 32V
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2N5367
O-92B
300mA
360mW
IB50mA
AH TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fc.fc.53131 0015233 3 OLE » RZB12100Y L r-s s - i< r PULSED MICROW AVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications, It operates in pulsed conditions only and is recommended fo r IFF applications.
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RZB12100Y
bb53T31
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 0inE D ^53*131 0D1S5A7 □ RZB12250Y r- %-*>'- s' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.
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RZB12250Y
100ps;
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear
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DD3T433
BLW83
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Untitled
Abstract: No abstract text available
Text: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to
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DD1411L
BLY87A
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Transistor TT 2144
Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
Text: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
HFA3046
Transistor TT 2144
Sii 9573
2907 pnp transistor
NPN/Transistor TT 2144
Sii 9024
22E09
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RX1214B300Y
Abstract: No abstract text available
Text: N AMER PH ILIP S/D ISCRETE ObE D ^53131 GOlSlô'ï □ • RX1214B300Y t r ^ 3 3 - / r PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor fo r use in common-base, class-C wideband amplifiers operating under pulsed conditions. It is recommended for L-band radar applications.
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RX1214B300Y
D01S113
RX1214B3
RX1214B300Y
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h a 431 transistor
Abstract: transistor w 431 RZB12250Y transistor 431 N
Text: N AMER PHILIPS/DISCRETE ObE D • ^53=131 OD1S5Ô7 D ■ RZB12250Y r - 'iZ '-is ' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.
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RZB12250Y
h a 431 transistor
transistor w 431
RZB12250Y
transistor 431 N
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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TRANSISTOR BI 243
Abstract: vhf linear pulse power amplifier aanr BLV31 capacitor 224 J 332 DISC CAPACITOR d 331 Transistor WP380
Text: t.SE D PHILIPS INTERNATIONAL • 711ÜÔEb DGfc.EBb3 534 IPHIN BLV31 V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers. Diffused em itter ballasting resistors and the application o f
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BLV31
711002b
00b2671
7Z83384
7Z83385
7Z83386
TRANSISTOR BI 243
vhf linear pulse power amplifier
aanr
BLV31
capacitor 224
J 332 DISC CAPACITOR
d 331 Transistor
WP380
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UN 2911
Abstract: No abstract text available
Text: ¡si H a r r i <33 semiconductor HFA3046, HFA3096, HFA3127, HFA3128 s Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT .8GHz • NPN Current Gain (h FE) .70
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
HFA3046
UN 2911
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Untitled
Abstract: No abstract text available
Text: I I N AMER PHILIPS/DISCRETE MAINTENANCE TYPE DbE D bfc.53el31 00150 43 5 • J M06075B200Z T - ^ 3 - IM PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended fo r use in military and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications.
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M06075B200Z
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x98c
Abstract: No abstract text available
Text: / r r SGS-THOMSON BUX98C HIGH POWER NPN SILICON TRANSISTOR . . • . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS: . HIGH FREQUENCY AND EFFICENCY CONVERTERS . LINEAR AND SWITCHING INDUSTRIAL
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BUX98C
BUX98C
x98c
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BU808
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 5SE D ^53=131 QOlfibS? 0 • I _J B U 808 y r s i - i t r SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn switching transistor in a TO-3 envelope, intended for use in three-phase AC motor control systems.
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T-33-T5
T-33-75
7Z81799
BU808
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transistor marking T2
Abstract: TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor
Text: • ^53^31 GGEMSSM HAPX N AMER PHILIPS/DISCRETE BCV64 BCV64B b7E D SILICON PLANAR TRANSISTOR Double P N-P transistor in a plastic SOT-143 envelope. Intended fo r Schmitt-trigger applications. N-P-N complement is the BCV63. QUICK REFERENCE DATA transistor Collector-emitter voltage open base
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BCV64
BCV64B
OT-143
BCV63.
DDEU55b
transistor marking T2
TRANSISTOR 436
SCHMITT-TRIGGER application
BCV63
BCV64B
bcv64 SOT143
NPN PNP SOT-143
700 v power transistor
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D2C17
Abstract: BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf
Text: N AMER P H I L I P S / D I S C R E T E bTE T> • ^ 53^31 T 1 3 ■ APX 002*1732 A BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran
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BLY92C
OT-120.
7Z68949
D2C17
BLY92C
BLY92
BLY92 transistor
sot120
8-32UNC
RF POWER TRANSISTOR NPN vhf
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is
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BLX95
7Z66943
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MMBR536
Abstract: No abstract text available
Text: 1EE § b3h72 SM MOTOROLA MOTOROLA SC QQ&75&S XSTRS/R □ I r-u-i r ' F SEM ICONDUCTOR TECHNICAL DATA MPS536 MMBR536 The RF Line PIMP Silico n High Frequency Transistor L O W N O IS E HIGH R F G A IN . this high current gain-bandwidth transistor makes an excellent RF amplifier and
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b3h72
MPS536
MMBR536
OT-23
A/500
IS22I
MMBR536
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marking S3 amplifier
Abstract: MS6075B800Z
Text: I I N AMER P H I L I P S / D I S C R E T E GtE D • ^^53^31 X MAINTENANCE TYPE | ' OOlSObS 4 MS6075BB00Z T -33-/ir PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended fo r use in m ilitary and professional applications. It operates only in
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MS 1117 ADC
Abstract: 1117 ADC TRANSISTOR 2SC 733 BUS51 1117 20 ADC 1117 S Transistor K1119 TRANSISTOR 2SC 635 100-C 25CC
Text: MOTOROLA SC X S T R S /R iaE D I b3b?25M GoaMaaT T I F MOTOROLA SEM ICONDUCTOR BUS51 TECHNICAL DATA ADVANCED INFORMATION 50 A M PER ES SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR NPN SIUCON POWER TRANSISTOR 200 V O L T S V b r c E O 350 W A T TS The BUS51 transistor is designed for low voltage, high-speed, power
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BUS51
MS 1117 ADC
1117 ADC
TRANSISTOR 2SC 733
1117 20 ADC
1117 S Transistor
K1119
TRANSISTOR 2SC 635
100-C
25CC
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Untitled
Abstract: No abstract text available
Text: ^53=131 0025510 'i El H A P X BSP121 L7E » N AMER PH IL IP S/ DI SC R ET E 7 V. N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed fo r use as a line current interrupter in telephone sets and fo r application in relay, high-speed and
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BSP121
OT223
0Q25514
MCB331
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2n4427 MOTOROLA
Abstract: 2N4427
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4427 The R F Line 1 W - 1 7 5 MHz NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH FREQUENCY TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator N PN SILIC O N applications in m ilita ry and industrial equipm ent. Suitable fo r use
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2N4427
2n4427 MOTOROLA
2N4427
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BUK455-500B
Abstract: BUK455 BUK455-500A 25KW T0220AB RFTN-1
Text: N A ME R 2se d PHILIPS/DISCRETE • b t 53T 3i oa a D s i D a ■ PowerMOS transistor B U K 455-500A B U K 455-500B r - ^ 7 - GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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T-37-IS
BUK455
-500A
-500B
BUK455-500B
BUK455-500A
25KW
T0220AB
RFTN-1
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BLX95
Abstract: TRIMMER capacitor 10-40 pf G0b35 ptfe trimmer philips 100 pf International Power Sources PHILIPS 4312 amplifier IEC134 uhf trimmer capacitor Miniature Ceramic Plate Capacitors 2222 philips philips 2222 trimmer
Text: b5E D 711DÖ2b 0Db353fl 523 « P H I N BLX95 PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transm itting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is
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0Db353fl
BLX95
VCC-28V
BLX95
TRIMMER capacitor 10-40 pf
G0b35
ptfe trimmer philips 100 pf
International Power Sources
PHILIPS 4312 amplifier
IEC134
uhf trimmer capacitor
Miniature Ceramic Plate Capacitors 2222 philips
philips 2222 trimmer
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