BLF177
Abstract: 8830 transistor transistor marking code HF
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF177 HF/VHF power MOS transistor Product specification Supersedes data of 2003 Jul 21 2004 Dec 17 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain
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M3D060
BLF177
MBB072
MLA876
OT121B
SCA76
R02/05/pp19
BLF177
8830 transistor
transistor marking code HF
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CPC1303
Abstract: EIA-481-2 CPC1303GRTR
Text: CPC1303 Single-Transistor Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio Saturation Voltage Input Control Current Rating 30 200 0.5 0.2 Description Units VP % V mA The CPC1303 is a unidirectional input optocoupler with a single-transistor output, which uses optically
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CPC1303
CPC1303
5000Vrms
CPC1466.
DS-CPC1303-R02
EIA-481-2
CPC1303GRTR
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CPC1001N
Abstract: CPC1001
Text: CPC1001N Unidirectional Input, Single-Transistor Output Optocoupler Breakdown Voltage BVCEO Current Transfer Ratio Min Saturation Voltage Input Control Current CPC1001N 30 100 0.3 0.2 Units V % V mA CPC1001N is a unidirectional input optocoupler with a single transistor output. Current transfer ratios
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CPC1001N
CPC1001N
100mA
1500Vrms
E76270
DS-CPC1001N-R02
CPC1001
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b1009 transistor
Abstract: B1009 ba656 ba9700-series BA6566
Text: Regulator ICs Switching regulator for DC-DC converters BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF and BA9700AFV are switching regulators that use a pulse width modulation PWM system. They use a transistor switch to stabilize the output voltage. By the use of the transistor, power loss is decreased, fluctnation efficiency is improved, and the circuit is made more
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BA9700A/BA9700AF/BA97OOAFV
BA9700A,
BA9700AF
BA9700AFV
470kHz)
BU8874lBU8874F
BU8874
BU8874F
03iOl
b1009 transistor
B1009
ba656
ba9700-series
BA6566
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LDA102
Abstract: EIA-481-2 J-STD-033
Text: LDA102 Optocoupler, Unidirectional Input Single-Transistor Output Parameter Breakdown Voltage Current Transfer Ratio Minimum Saturation Voltage Input Control Current Rating 30 50 0.5 1 Description Units VP % V mA The LDA102 is a unidirectional-input optocoupler
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LDA102
LDA102
3750Vrms
DS-LDA102-R02
EIA-481-2
J-STD-033
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LDA102
Abstract: No abstract text available
Text: LDA102 Optocoupler, Unidirectional Input Single-Transistor Output Parameter Breakdown Voltage Current Transfer Ratio Minimum Saturation Voltage Input Control Current Rating 30 50 0.5 1 Description Units VP % V mA The LDA102 is a unidirectional-input optocoupler
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LDA102
LDA102
3750Vrms
DS-LDA102-R02
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EIA-481-2
Abstract: LDA201 LDA201S LDA201STR
Text: LDA201 Dual Unidirectional Input Single Transistor Output Optocouplers Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Description Units VP % V mA LDA201 is a dual unidirectional optocoupler with
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LDA201
LDA201
E76270
100mA
3750Vrms
DS-LDA201-R02
EIA-481-2
LDA201S
LDA201STR
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EIA-481-2
Abstract: LDA202
Text: LDA202 Dual Bidirectional Input Single Transistor Output Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Units VP % V mA Description LDA202 is a dual bidirectional input optocoupler with
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LDA202
LDA202
100mA
3750Vrms
E76270
DS-LDA202-R02
EIA-481-2
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Untitled
Abstract: No abstract text available
Text: LDA203 Dual Unidirectional Input, Single-Transistor Output Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Description Units VP % V mA LDA203 is a dual unidirectional optocoupler with
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LDA203
LDA203
100mA
3750Vrms
E76270
LDA203S
LDA203STR
DS-LDA203-R02
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EIA-481-2
Abstract: LDA200 LDA200S LDA200STR
Text: LDA200 Dual Bidirectional Input Single Transistor Output Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Units VP % V mA Description LDA200 is a dual bidirectional input optocoupler with
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LDA200
LDA200
100mA
3750Vrms
E76270
DS-LDA200-R02
EIA-481-2
LDA200S
LDA200STR
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LDA211
Abstract: No abstract text available
Text: LDA211 Dual Unidirectional Input Darlington Transistor Output Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units VP % 1 1 V mA Description LDA211 is a dual unidirectional input optocoupler
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LDA211
LDA211
100mA
3750Vrms
E76270
DS-LDA211-R02
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Untitled
Abstract: No abstract text available
Text: LDA210 Dual Bidirectional Input Darlington Transistor Output Optocoupler Perameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units VP % 1 1 V mA Description LDA210 is a dual bidirectional input optocoupler with
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LDA210
LDA210
100mA
3750Vrms
E76270
DS-LDA210-R02
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CGH27015S
Abstract: No abstract text available
Text: PRELIMINARY CGH27015S 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which
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CGH27015S
CGH27015S
CGH2701
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CGH27015S
Abstract: 003536 54-619 msl 9351 06752
Text: PRELIMINARY CGH27015S 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which
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CGH27015S
CGH27015S
CGH2701
003536
54-619
msl 9351
06752
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LQ10DX01
Abstract: tcl tv D1024 transistor 11-G02 D1021 D1022 D1023 DF9B-15P-1V DF9B-15S-1V DF9B-21P-1V
Text: LQ10DX01 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 10.4" The SHARP LQ10DX01 Color TFT-LCD module is an active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel,
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LQ10DX01
LQ10DX01
tcl tv
D1024 transistor
11-G02
D1021
D1022
D1023
DF9B-15P-1V
DF9B-15S-1V
DF9B-21P-1V
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification NPN Silicon planar epitaxial R02731B20W microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 jj.s pulse width, 10% duty factor • Diffused emitter ballasting resistors
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R02731B20W
711002b
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transistor 1BT
Abstract: transistor 1BT 86 1bt npn common base amplifier circuit designing npn 1bt 1bt transistor
Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES R02731B50W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium
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R02731B50W
transistor 1BT
transistor 1BT 86
1bt npn
common base amplifier circuit designing
npn 1bt
1bt transistor
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LT 5251
Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Text: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >
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02SD4711
cycleS50%
LT 5251
2s87
a1t transistor
TRANSISTOR A1t
Y500200
t430 transistor
transistor bc 541
5251 F ic
T440
2SB564
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial * - * microwave power transistor R02731B20W FEA TUR ES Q U IC K R E F E R E N C E DATA • Suitable for short and medium Microwave performance up to T mb = 25 °C in a common base class C
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R02731B20W
711005b
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness
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R02731B10W
0CH3CI54
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness
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R02731B50W
711002b
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K 3053 TRANSISTOR
Abstract: k 246 transistor
Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 p,s pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness
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R02731B10W
0CH3C54
K 3053 TRANSISTOR
k 246 transistor
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25CC
Abstract: MJE18206 MJF18206 J280 LB013
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18206 M JF18206 D esigner’s Data Sheet SWITCHMODE ™NPN Bipolar Power Transistor for Electronic Light B allast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS
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MJE/MJF18206
O-220
MJE18206
AN1040.
25CC
MJF18206
J280
LB013
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UPC78M24A
Abstract: MPC78M18AHF MPC78M12 UPC78M05 MPC78M15AHF 78m15a MPC78 78M07A
Text: ¡» m ìa S iiti BIPOLAR ANALOG INTEGRATED CIRCUITS juPC78M00A SERIES THREE TERMINAL POSITIVE VOLTAGE REGULATORS DESCRIPTION ¿¿PC78M00A series are monolithic three terminal positive regulators which employ internally current limiting,therma1 shut down,output transistor safe operating area protection make them essentially indestructible.
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uPC78M00A
PC78M00A
/iPC78M00
MPC78M05AHF
iiPC73M06AHF
MPC78M08AHF
MPC7BM09AHF
MPC78M10AHF
iPC78M12AHF
MPC78M1
UPC78M24A
MPC78M18AHF
MPC78M12
UPC78M05
MPC78M15AHF
78m15a
MPC78
78M07A
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