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    TRANSISTOR R05 Search Results

    TRANSISTOR R05 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R05 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LDA210

    Abstract: LDA210S
    Text: LDA210 Dual Optocouplers, Bidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units


    Original     		PDF LDA210 LDA210 100mA 3750Vrms E7627 DS-LDA210-R05 LDA210S

    LDA212

    Abstract: No abstract text available
    Text: LDA212 Dual Optocouplers, Bidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units


    Original     		PDF LDA212 LDA212 100mA 3750Vrms E7627 DS-LDA212-R05

    LDA211

    Abstract: LDA211S
    Text: LDA211 Dual Optocouplers, Unidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units


    Original     		PDF LDA211 LDA211 100mA 3750Vrms DS-LDA211-R05 LDA211S

    LDA203

    Abstract: No abstract text available
    Text: LDA203 Dual Optocouplers, Unidirectional Input Single-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Units VP


    Original     		PDF LDA203 LDA203 100mA 3750Vrms E76270 DS-LDA203-R05

    LDA200

    Abstract: No abstract text available
    Text: LDA200 Dual Optocouplers, Bidirectional Input Single-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Units VP


    Original     		PDF LDA200 LDA200 100mA 3750Vrms E76270 DS-LDA200-R05

    Untitled

    Abstract: No abstract text available
    Text: LDA201 Dual Optocouplers, Unidirectional Input Single-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Units VP


    Original     		PDF LDA201 LDA201 100mA 3750Vrms E76270 DS-LDA201-R05

    Untitled

    Abstract: No abstract text available
    Text: LDA101 Optocoupler, Unidirectional Input Single-Transistor Output Parameter Breakdown Voltage BVCEO Current Transfer Ratio Typical Saturation Voltage Input Control Current Rating 30 300 0.5 1 Description Units VP % V mA The LDA101 is a unidirectional-input optocoupler


    Original     		PDF LDA101 LDA101 3750Vrms DS-LDA101-R05

    EIA-481-2

    Abstract: J-STD-033 LDA101 LDA101S LDA101STR
    Text: LDA101 Optocoupler, Unidirectional Input Single-Transistor Output Parameter Breakdown Voltage BVCEO Current Transfer Ratio Typical Saturation Voltage Input Control Current Rating 30 300 0.5 1 Description Units VP % V mA The LDA101 is a unidirectional-input optocoupler


    Original     		PDF LDA101 LDA101 3750Vrms DS-LDA101-R05 EIA-481-2 J-STD-033 LDA101S LDA101STR

    LDA100STR

    Abstract: EIA-481-2 J-STD-033 LDA100 LDA100S
    Text: LDA100 Optocoupler, Bidirectional Input Single-Transistor Output Parameter Breakdown Voltage BVCEO Current Transfer Ratio Typical Saturation Voltage Input Control Current Rating 30 300 0.5 1 Description Units VP % V mA The LDA100 is a bidirectional-input optocoupler


    Original     		PDF LDA100 LDA100 3750Vrms DS-LDA100-R05 LDA100STR EIA-481-2 J-STD-033 LDA100S

    CPC1001N

    Abstract: No abstract text available
    Text: CPC1001N Optocoupler: Unidirectional Input, Single-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage BVCEO Current Transfer Ratio Min Saturation Voltage Input Control Current Rating 30 100 0.3 0.2 Units V % V mA CPC1001N is a unidirectional input optocoupler with


    Original     		PDF CPC1001N CPC1001N 100mA 1500Vrms E76270 49410ight. DS-CPC1001N-R05

    irf44z

    Abstract: 3525 PWM MOSFET and parallel Schottky diode ic 3525 pwm application dc to dc converter FLUKE 79 manual 5n03 ic 3525 pwm application IRFZ44 data MTP75N03HDL Coiltronics
    Text: AN1520/D HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications http://onsemi.com Prepared by: Scott Deuty, Applications Engineer APPLICATION NOTE INTRODUCTION A new technology, HDTMOS, was recently introduced which addresses the needs of today’s power transistor users.


    Original     		PDF AN1520/D r14525 irf44z 3525 PWM MOSFET and parallel Schottky diode ic 3525 pwm application dc to dc converter FLUKE 79 manual 5n03 ic 3525 pwm application IRFZ44 data MTP75N03HDL Coiltronics

    JESD-625

    Abstract: EIA-481-2 J-STD-033 LDA111 LDA111S LDA111STR 6-Pin DIP Phototransistor Output Optocoupler
    Text: LDA111 Optocoupler, Unidirectional Input Darlington-Transistor Output Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units VP % 1 1 V mA Description LDA111 is a unidirectional-input optocoupler with


    Original     		PDF LDA111 LDA111 100mA 3750Vrms DS-LDA111-R05 JESD-625 EIA-481-2 J-STD-033 LDA111S LDA111STR 6-Pin DIP Phototransistor Output Optocoupler

    Untitled

    Abstract: No abstract text available
    Text: LDA111 Optocoupler, Unidirectional Input Darlington-Transistor Output Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units VP % 1 1 V mA Description LDA111 is a unidirectional-input optocoupler with


    Original     		PDF LDA111 LDA111 100mA 3750Vrms DS-LDA111-R05

    DS-LDA110-R05

    Abstract: EIA-481-2 J-STD-033 LDA110 LDA110S LDA110STR
    Text: LDA110 Optocoupler, Bidirectional Input Darlington-Transistor Output Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units VP % 1 1 V mA Description LDA110 is a bidirectional-input optocoupler with


    Original     		PDF LDA110 LDA110 100mA 3750Vrms DS-LDA110-R05 DS-LDA110-R05 EIA-481-2 J-STD-033 LDA110S LDA110STR

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original     		PDF KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112

    stk433-870

    Abstract: No abstract text available
    Text: Ordering number : ANDSTK433000NE Thick-Film Hybrid IC STK433-000N-E series 2-4ch class-AB Audio Power IC from 40W to 150W Overview The STK433-000N-E series is a hybrid IC designed to be used in from 40W to 150W x 2,3,4ch class AB audio power amplifiers. Application


    Original     		PDF ANDSTK433000NE STK433-000N-E STK433-040N-E STK433-060N-E STK433-130N-E STK433-330N-E 120517JI/AS stk433-870

    Untitled

    Abstract: No abstract text available
    Text: HIC Division TENTATIVE Thick-Film Hybrid IC STK433-000N-E series 2-4ch class-AB Audio Power IC from 40W to 150W Overview The STK433-000N-E series is a hybrid IC designed to be used in from 40W to 150W x 2,3,4ch class AB audio power amplifiers. Application


    Original     		PDF STK433-000N-E STK433-040N-E STK433-060N-E STK433-130N-E /20Hz 20kHz) 120517JI/AS

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    PA1522H

    Abstract: MOS FET Array
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 COMPOUND FIELD EFFECT POWER TRANSISTOR P A 1 5 2 2 N-CHAIMIMEL POWER MOS FET ARRAY SWITCHING TYPE


    OCR Scan     		PDF uPA1522 PA1522H MOS FET Array

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP30N06 S TP30N06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		PDF STP30N06 STP30N06FI TP30N06FI STP30N06/FI ISQWATT220

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E STP30N05 S TP30N05FI SGS-THOMSON ¡m era « STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		PDF STP30N05 TP30N05FI STP30N05FI STP30N05/FI ISQWATT220

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    NEC .PA1400H

    Abstract: PA1400H PA1428H TYA 0298 13X26X4 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400
    Text: NEC j tM'g- y<r7— C o m p o u n d P o w e r T ra n s is to r ¿¿PA 1428H mm i NPN Silicon Epitaxial Transistor Low Speed Switching Darlington Industrial Use 7"') > •9 • 9 J 7*y J 9 ■7 r 9 V TR • i ') ■ ECR^ ^ ^ 0 ¿ 'c 7 ) g x a ^ if ^ J-fff;:, y V J y[ K • i — 9 • 'J w — • 7


    OCR Scan     		PDF PA1428H 13X26X4 NEC .PA1400H PA1400H PA1428H TYA 0298 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400

    SMD TRANSISTOR MARKING P28

    Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
    Text: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes


    OCR Scan     		PDF 5962-R053-94. SMD TRANSISTOR MARKING P28 SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf