TRANSISTOR R5 Search Results

TRANSISTOR R5 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR R5 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
germanium transistors PNP Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,	Original	IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR	PDF
BY206 Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLW32 BY206 BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430	PDF
BY206 Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLW34 BY206 C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor	PDF
BLW33 Abstract: BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW33 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLW33 BLW33 BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558	PDF
BLW98 Abstract: blw98 transistor BY206 application note blw98 BY206 Equivalent uhf linear amplifier BD136 linear handbook 3 pin trimmer capacitors transistor blw98 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW98 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor BLW98 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLW98 BLW98 blw98 transistor BY206 application note blw98 BY206 Equivalent uhf linear amplifier BD136 linear handbook 3 pin trimmer capacitors transistor blw98	PDF
transistor gl 1117 Abstract: MGP485 Transistor gl 1117 B BLW60C IEC 320 C13 MSB056 MGP480 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification File under Discrete Semiconductors, SC08a March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,	Original	BLW60C SC08a transistor gl 1117 MGP485 Transistor gl 1117 B BLW60C IEC 320 C13 MSB056 MGP480	PDF
transistor gl 1117 Abstract: trimmer 3-30 pf BLW60C MSB056 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial	Original	BLW60C transistor gl 1117 trimmer 3-30 pf BLW60C MSB056	PDF
NEC NF 932 Abstract: 2SC4092 Text: DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band.	Original	2SC4092 2SC4092 S21e2 NEC NF 932	PDF
BD443 Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power	Original	BLW77 BD443 MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf	PDF
BLW83 Abstract: philips carbon film resistor BY206 BD204 RF amplifiers in the HF and VHF Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and	Original	BLW83 BLW83 philips carbon film resistor BY206 BD204 RF amplifiers in the HF and VHF	PDF
BD443 Abstract: BLW76 BD228 philips polystyrene capacitor MGP501 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power	Original	BLW76 BD443 BLW76 BD228 philips polystyrene capacitor MGP501	PDF
4312 020 36640 Abstract: BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,	Original	BLW86 SC08a 4312 020 36640 BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor	PDF
2SC4092 Abstract: of IC 4013 n NEC NF 932 marking R4 Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band.	Original	2SC4092 2SC4092 S21e2 of IC 4013 n NEC NF 932 marking R4	PDF
Philips polystyrene capacitors Abstract: capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB	Original	BLW76 SC08a Philips polystyrene capacitors capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59	PDF

BLW85 Abstract: gp550 SOt123 Package TP200 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW85 HF/VHF power transistor Product specification March 1993 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and	Original	BLW85 BLW85 gp550 SOt123 Package TP200	PDF
Untitled Abstract: No abstract text available Text: BLP15M7160P Power LDMOS transistor Rev. 2 — 10 June 2014 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The	Original	BLP15M7160P	PDF
Untitled Abstract: No abstract text available Text: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The	Original	BLP15M7160P	PDF
BLF888 Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP Text: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W	Original	BLF888 BLF888 dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP	PDF
Untitled Abstract: No abstract text available Text: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W	Original	BLF888 BLF888	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
Untitled Abstract: No abstract text available Text: rZ 7 SCS-THOMSON ^ 7 # 6Sll!CISl ilLIIISin3©RSD6S BU R50S HIGH CURRENT NPN SILICON TRANSISTOR . . • . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED ^*9 APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT	OCR Scan	BUR50S	PDF
Diode Equivalent 1n4148 Abstract: 2n2219 equivalent transistor equivalent transistor R5 2n2219 equivalent diode 1n4148 equivalent resistor MICROWAVE TRANSISTOR equivalent diode for 1n4148 equivalent 2N2219 transistor 1N4148 Text: Philips Semiconductors Product specification Microwave Transistors General APPLICATION INFORMATION COMPONENT DESCRIPTION VALUE A amplifier D.U.T. microwave transistor TR transistor D diode C 1,C 2 tantalum capacitor 22 nF, 50 V R1 resistor 2.2 kß ±5% R2, R3, R5, R6	OCR Scan	MC3403 2N2219 1N4148 Diode Equivalent 1n4148 2n2219 equivalent transistor equivalent transistor R5 2n2219 equivalent diode 1n4148 equivalent resistor MICROWAVE TRANSISTOR equivalent diode for 1n4148 equivalent 2N2219 transistor 1N4148	PDF
transistor D 2588 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4092 is an NPN silicon epitaxial transistor designed for low- Units: mm noise amplifier at VHF, UHF band.	OCR Scan	2SC4092 2SC4092 transistor D 2588	PDF
Philips polystyrene capacitor Abstract: ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor Text: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear	OCR Scan	OT121B. BLW76 MGP517 Philips polystyrene capacitor ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor	PDF

Privacy Settings

TRANSISTOR R5 Search Results

TRANSISTOR R5 Result Highlights (5)

TRANSISTOR R5 Datasheets Context Search

germanium transistors PNP

BY206

BY206

BLW33

BLW98

transistor gl 1117

transistor gl 1117

NEC NF 932

BD443

BLW83

BD443

4312 020 36640

2SC4092

Philips polystyrene capacitors

BLW85

Untitled

Untitled

BLF888

Untitled

la 4440 amplifier circuit diagram 300 watt

Untitled

Diode Equivalent 1n4148

transistor D 2588

Philips polystyrene capacitor