TRANSISTOR REPLACEMENTS Search Results

TRANSISTOR REPLACEMENTS Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR REPLACEMENTS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
MJD127G Abstract: No abstract text available Text: MJD122, NJVMJD122 NPN , MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR	Original	MJD122, NJVMJD122 MJD127, NJVMJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127G	PDF
Untitled Abstract: No abstract text available Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTOR 8 AMPERES	Original	MJD122, NJVMJD122T4G MJD127 2N6040â 2N6045 TIP120â TIP122 TIP125â TIP127 MJD122/D	PDF
MJD122 Abstract: TIP125-TIP127 mjd122g Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES	Original	MJD122, NJVMJD122T4G MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122 mjd122g	PDF
MJD122T4G Abstract: TRANSISTOR MJD122 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS	Original	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122T4G TRANSISTOR MJD122	PDF
100 amp npn darlington power transistors Abstract: MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS	Original	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D 100 amp npn darlington power transistors MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120	PDF
tip120tip122 Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127 Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features	Original	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D tip120tip122 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127	PDF
MJD127T4 Abstract: npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features	Original	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4 npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125	PDF
TIP125-TIP127 Abstract: TIP120-TIP122 2N6040-2N6045 MJD122G MJD122T4G MJD127G 2N6040 2N6045 MJD122 MJD127 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features	Original	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122G MJD122T4G MJD127G 2N6040 2N6045 MJD122 MJD127	PDF
MJD127T4G Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127 Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS	Original	MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4G 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127	PDF
GT30J124 Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123 Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.	Original	BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UP1496 Preliminary PNP SILICON TRANSISTOR PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR 3 DESCRIPTION The UTC UP1496 are series of PNP silicon planar transistors which have gain of 500 at IC=100mA. It can be used in such applications like battery powered circuits and darlington	Original	UP1496 UP1496 100mA. OT-23 UP1496L UP1496G UP1496-AE3-R UP1496L-AE3-R UP1496G-AE3-R	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UP1496 Preliminary PNP SILICON TRANSISTOR PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR 3 DESCRIPTION The UTC UP1496 are series of PNP silicon planar transistors which have gain of 500 at IC=100mA. It can be used in such applications like battery powered circuits and darlington	Original	UP1496 UP1496 100mA. OT-23 UP1496G-AE3-R QW-R206-095	PDF

GT45F122 Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124	PDF
GT30F124 Abstract: GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122 Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
transistor JSW Abstract: transistor JSW 12 ZTX449 high power amp 100mhz 1w ferranti JSW 70 transistor HFE 400 1w Scans-00107847 jsw transistor SE26 Text: 4 FERRANTI ZTX449 semiconductors NPN Silicon Planar Medium Power Transistor DESCRIPTION The ZTX449 is a high current transistor encapsulated in the popular E-line package. The device is intended for low voltage, high current L.F. applications and features high power	OCR Scan	ZTX449 ZTX449 100mA 100ms transistor JSW transistor JSW 12 high power amp 100mhz 1w ferranti JSW 70 transistor HFE 400 1w Scans-00107847 jsw transistor SE26	PDF
RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan		PDF
mj 13003 Abstract: transistor MJ 13009 transistor MJ 13003 transistor MJ 13007 MJE13000 mj 13002 mj 13007 MJE13000 series 13002 and 13003 power transistor mj 13009 Text: o lYSajor Source for ¡yPI\l High Voltage Power Transistors in TO-3 and T o -220 Case Outline Semiconductor Technology, Inc., in an effort to enhance the most complete High Voltage Transistor product line in the industry, is complimenting the High Voltage Transistor product	OCR Scan	T0-220 MJE13000 MJ410 STI-410 MJ411 STI-411 MJ413 STI-413 MJ423 mj 13003 transistor MJ 13009 transistor MJ 13003 transistor MJ 13007 mj 13002 mj 13007 MJE13000 series 13002 and 13003 power transistor mj 13009	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
ZTX449 Abstract: No abstract text available Text: NPN Silicon Planar Medium Power Transistor ZTX449 DESCRIPTION The Z T X 4 4 9 is a high current transistor encapsulated in the popular E-line package. The device is intended for low voltage, high current L.F. applications and features high power dissipation, 1W at 2 5 ° C ambient temperature,	OCR Scan	ZTX449 ZTX449	PDF

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TRANSISTOR REPLACEMENTS Search Results

TRANSISTOR REPLACEMENTS Result Highlights (5)

TRANSISTOR REPLACEMENTS Datasheets Context Search

rjh3047

MJD127G

Untitled

MJD122

MJD122T4G

100 amp npn darlington power transistors

tip120tip122

MJD127T4

TIP125-TIP127

MJD127T4G

GT30J124

BUV48I

Untitled

Untitled

GT45F122

GT30F124

la 4440 amplifier circuit diagram 300 watt

transistor JSW

RCA H 541

mj 13003

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

ZTX449