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    TRANSISTOR RF 1049 Search Results

    TRANSISTOR RF 1049 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR RF 1049 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    433MHZ amplifier 1w

    Abstract: transistor a 2601
    Text: 19-1185; Rev 2; 5/97 A l i l X I V M 3.6V, 1W RF P o w er Transistors fo r 900M H z A p p licatio n s The MAX2601 is a high-performance silicon bipolar RF po w e r tra n s is to r. The M AX2602 in c lu d e s a h ig h performance silicon bipolar RF power transistor, and a


    OCR Scan     		MAX2601/MAX2602 IS-54) 29dBm -28dBc MAX2601 AX2602 MAX2601/MAX2602 433MHZ amplifier 1w transistor a 2601 PDF

    GMA marking

    Abstract: No abstract text available
    Text: SIEMENS BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 G H z at collector currents from 70mA to 130mA • Power amplifiers for D ECT and PCN systems • Integrated emitter ballast resistor


    OCR Scan     		130mA BFG135A Q62702-F1322 OT-223 900MHz IS211 GMA marking PDF

    Marking ANs

    Abstract: Transistor C 5198 b 514 transistor BFP450
    Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability


    OCR Scan     		Q62702-F1590 OT-343 Marking ANs Transistor C 5198 b 514 transistor BFP450 PDF

    a06 transistor

    Abstract: Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor l For Medium Power Amplifiers l Compression Point P = +19 dBm at 1.8 GHz -1dB l l l Maximum Available Gain Gma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency fT = 24 GHz Gold metalization for high reliability


    Original     		BFP450 25-Line Transistor25 OT343 Q62702-F1590 a06 transistor Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450 PDF

    a06 transistor

    Abstract: CHIP T503 S BFP450 siemens BFP450
    Text: S IE M E N S SIEGET 25 BFP450 NPN Silicon RF Transistor • • • • • For Medium Power Amplifiers Compression Point P.1dB = +19 dBm at 1.8 GHz Maximum Available Gain G ma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency f j = 24 GHz


    OCR Scan     		25-Line Transistor25 BFP450 Q62702-F1590 OT343 a06 transistor CHIP T503 S BFP450 siemens BFP450 PDF

    BFP450

    Abstract: BGA420
    Text: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability


    Original     		BFP450 OT343 BFP450 BGA420 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability


    OCR Scan     		Q62702-F1590 OT-343 2200b IS21I2 fl235bQS 0122QQ7 0235b05 PDF

    marking ans

    Abstract: BFP450 BGA420
    Text: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability


    Original     		BFP450 OT343 marking ans BFP450 BGA420 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3  For medium power amplifiers  Compression point P-1dB = +19 dBm at 1.8 GHz 4 maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz  Transition frequency fT = 24 GHz  Gold metallization for high reliability


    Original     		VPS05605 OT-343 50Ohm -j100 Nov-17-2000 PDF

    transistor s parameters noise

    Abstract: BF 145 transistor
    Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original     		VPS05605 OT-343 50Ohm -j100 Mar-07-2001 transistor s parameters noise BF 145 transistor PDF

    Q62702-F1590

    Abstract: 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746
    Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 • For medium power amplifiers 4 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability


    Original     		VPS05605 Q62702-F1590 OT-343 50Ohm -j100 Sep-09-1998 Q62702-F1590 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746 PDF

    thermal simulation of IC package

    Abstract: VPS05605 24165V
    Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original     		VPS05605 OT-343 50Ohm -j100 Dec-13-1999 thermal simulation of IC package VPS05605 24165V PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original     		BFP450 VPS05605 OT343 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original     		BFP450 VPS05605 OT343 PDF

    c 1027 transistor

    Abstract: TRANSISTOR RF 1049 Power-Amplifier R1075
    Text: _ W ire le s s /R F P ro d u c ts Wireless/RF Products. Product T a b le . 10-2 MAX2102 Direct-Conversion Tuner IC for Digital DBS


    OCR Scan     		MAX2102 MAX2406 MAX2410 MAX2411A OT23-5 MAX2632 MAX2633 OT23-6 MAX2662 MAX2690 c 1027 transistor TRANSISTOR RF 1049 Power-Amplifier R1075 PDF

    PCF7931AS

    Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
    Text: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		87C528 X3A-KTY181/1 X3A-OH155 PCF7931AS PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps PDF

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan     		28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram PDF

    on5134

    Abstract: philips ON5134 transistor tda3612 OM8838ps BT 804 triac on5134 Transistor on5217 triacs bt 804 600v D203B SMD Transistor W02
    Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN48A Exhibit A January 21, 2003 SEE DN48A NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		DN48A DN48A on5134 philips ON5134 transistor tda3612 OM8838ps BT 804 triac on5134 Transistor on5217 triacs bt 804 600v D203B SMD Transistor W02 PDF

    philips ON5134 transistor

    Abstract: on5134 triacs bt 804 600v BT 804 triac tda3612 Triac bt 808 SMD Transistor W02 TRIAC BT 812 OM8838ps D203B
    Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN48A Exhibit A January 21, 2003 SEE DN48A NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		DN48A DN48A philips ON5134 transistor on5134 triacs bt 804 600v BT 804 triac tda3612 Triac bt 808 SMD Transistor W02 TRIAC BT 812 OM8838ps D203B PDF

    PCF7952

    Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
    Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


    Original     		VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF2903 M I C R O -DEVICES INTEGRATED SPREAD SPECTRUM RECEIVER Typical Applications • Spread Spectrum Systems • Dual Mode Digital/Analog Receivers • Dual-IF Strip for PCS and 2.4 GHz ISM • POS Terminals Band Receivers • Commercial Handheld Systems


    OCR Scan     		RF2903 RF2903 150MHz 1000MHz 200MHz, Str00-3C RF2903PCBA PDF

    qualcomm msm 8660

    Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
    Text:                 1      2        3         4       5    6      7 ! " 8      #  9 !   


    Original     		RF2043 RF2044 RF2045 RF2046 RF2047 RF2048 RF2103P org/jedec/download/std020 qualcomm msm 8660 ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517 PDF

    PANDUIT connector 100F

    Abstract: IC 40007 RF2903 PCC470C 2 GHz BJT high frequency high power transistor 300mhz bjt n
    Text: RF RF2903 MICRO-DEVICES INTEGRATED SPREAD SPECTRUM RECEIVER Typical Applications • Spread Spectrum Systems • Dual Mode Digital/Analog Receivers • Dual-IF Strip for PCS and 2.4 GHz ISM • POS Terminals Band Receivers • Commercial Handheld Systems Product Description


    OCR Scan     		RF2903 RF2903 150MHz 1000MHz 200MHz, -1008CS-270XMBC MPSS100-3C IRF2903PCBA. PANDUIT connector 100F IC 40007 PCC470C 2 GHz BJT high frequency high power transistor 300mhz bjt n PDF

    PMA-545

    Abstract: PL-299 ZVA-24 monolithic circuit layout marking A Monolithic Amplifier marking 5 Monolithic Amplifier MARKING 545 DBM N5242a TB-502 marking package 545 amplifier
    Text: Low Noise, High IP3 Monolithic Amplifier 0.1-6 GHz Product Features • Single Positive Supply Voltage, 3V • Low Noise Figure, 0.8 dB typ. at 1GHz • High IP3, 36 dBm typ. 1GHz • Gain, 20dB typ. at 1 GHz • Output Power, up to +20dBm typ. • Micro-miniature size


    Original     		20dBm PMA-545+ DQ849 2002/95/EC) J-STD-020D C/85RH PMA-545 PL-299 ZVA-24 monolithic circuit layout marking A Monolithic Amplifier marking 5 Monolithic Amplifier MARKING 545 DBM N5242a TB-502 marking package 545 amplifier PDF