Untitled
Abstract: No abstract text available
Text: inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 BDY72 Silicon NPN Power Transistor DESCRIPTION • Contunuous Collector Current-lc= 3A • Collector Power Dissipation: Pc= 25W @TC= 25°C
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BDY72
100mA;
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Untitled
Abstract: No abstract text available
Text: 5V Linear Controller/Driver Description The CS-8128 contains all the necessary control circuitry to implement a 5V lin ear regulator. An external pass device is used to produce superior performance compared to conventional monolithic regulators. The CS-8128 with a TIP42
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CS-8128
TIP42
500mA,
350mV
500mA
CS-81289
CS-8128N8
CS-8128D8
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acrian RF POWER TRANSISTOR
Abstract: TU S1 3003 VTV-300 VTV-300-2 DDD1557 acrian RF POWER TRANSISTOR cd4792-4 VTV-300-4 F627 F627-8 F627-8-Q1
Text: 0182998 ACRIAN m ybui i» m w « p in y in a w M K • ■ ■ <p w * w T7 INC m m w v m m « m m h D Ë^G lflETifl n a n a a m a m n n w □D01524 S T—33—13 i A GENERAL VTV-300 DESCRIPTION The VTV-300 is a silicon NPN transistor designed for broadcast
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T-33-13
VTV-300
F627-8
acrian RF POWER TRANSISTOR
TU S1 3003
VTV-300-2
DDD1557
acrian RF POWER TRANSISTOR cd4792-4
VTV-300-4
F627
F627-8-Q1
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Untitled
Abstract: No abstract text available
Text: BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN mm BCW67A = DA BCW67B = DB BCW67C » DC BCW68F = DF BCW68G = DG BCW68H = DH 3.0 2.8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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BCW67,
BCW68,
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
67series
BCW67A,
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buz53a
Abstract: No abstract text available
Text: PowerMOS transistor N AMER PHILIPS/DISCRETE _BUZ53A_ DbE D • bbS3T31 DD14710 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies
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BUZ53A_
bbS3T31
DD14710
T-39-11
LLS3T31
BUZ53A
0Dm71b
buz53a
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Untitled
Abstract: No abstract text available
Text: U _ _ — - — - N AUER PHILIPS/DISCRETE OL.E D FowerMOS transistor • bbSBTBl DDlMMSfi 7 ■ " BUZ73 -pT 3 7 _ j May 1987
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BUZ73
bbS3T31
0144b3
BUZ73
T-39-11
S3T31
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cr 406 transistor
Abstract: BUZ54
Text: PowerMOS transistor BUZ54 N AMER PHILIPS/DISCRETE — DhE D • ^ 5 3 ^ 3 1 0D14717 5 ■ “ T - $ cH 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in
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BUZ54
0D14717
T-39-13
bbS3T31
0D14723
cr 406 transistor
BUZ54
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BUZ350
Abstract: IY TRANSISTOR BUZ35 at ma hi mvs
Text: N AUER P H I L I P S / D I S CR E TE DfaE D PowerMOS transistor ^ 53=131 0 0 1 4 7 5 2 7 BUZ350 T-3^-/3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ350
T0218AA;
T-39-13
BUZ350
IY TRANSISTOR
BUZ35
at ma hi mvs
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transistor RJH 30
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE _ INSULATED TYPE QM75TX-HB • lc • Vcex • hFE Collector current. 75A Collector-emitter voltage. 600V DC current gain. 750
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QM75TX-HB
E80276
E80271
11-M4
transistor RJH 30
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QD144
Abstract: No abstract text available
Text: PowerM OS transistor_ _ BU Z76A _ N AMER PHILIPS/DISCRETE ObE D U bb53131 001M4ab 1 • r - ^ r - n May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bb53131
001M4ab
BUZ76A_
bhS3T31
0D144TQ
T-39-11.
BUZ76A
T-39-11
bbS3T31
QD144
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BUZ76
Abstract: No abstract text available
Text: _PnwerMOS transistor_ BUZ76 N AMER PHILIPS/DISCRETE OLE D • bbSBTBl 0D1447T 4 ■ 1/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ76
0D1447T
BUZ76_
T-39-11
BUZ76
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BC 104k capacitor
Abstract: 2190 ic for lg tv Modulation using OTA D 1413 transistor transistor RJH 30
Text: V T C INC 9388929 TT D D I ^300^5^ DDGIMGM 4 V T C I NC 99D 01404 VA2713 T *7 9 -0 7 -2 0 DUAL HIGH-SPEED OPERATIONAL TRANSCONDUCTANCE AMPLIFIER WITH LINEARIZING DIODES AND BUFFER P R E LIM IN A R Y LSP FAMILY DATA SHEETS FEATURES • Low Offset Voltage: 0.5mV
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VA2713
75MHz
100MHz
VA2713
20KHz
50MHz.
30MHz
30MHz.
10KHz
100KHZ
BC 104k capacitor
2190 ic for lg tv
Modulation using OTA
D 1413 transistor
transistor RJH 30
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Untitled
Abstract: No abstract text available
Text: PowerMOS transistor_ BUZ80 N AMER PHILIPS/DISCRETE ObE D • bbSBTai 001454E 7 ■ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ80
001454E
BUZ80_
bbS3T31
T-39-11
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BUZ21
Abstract: No abstract text available
Text: _ ObE D N AMER PHILIPS/DISCRETE • PowerMOS transistor bbS 3 T 31 0 0 1 4 4 3 3 T ■ BUZ21 t -SI-W May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUZ21
BUZ21_
00144ES
T-39-11
Y-39-11
BUZ21
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TC701
Abstract: transistor RJH 30 nokia production line ausi die attach
Text: Novel Material for Improved Quality of RF-PA in Base-Station Applications Co-Authored by Nokia Research Center and Freescale Semiconductor Presented at 10th International Workshop on THERMal INvestigations of ICs and Systems 29 September – 1 October 2004
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FIN-00045,
TC701
transistor RJH 30
nokia production line
ausi die attach
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PS2705-4
Abstract: transistor RJH 30
Text: NEC HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI OPTOCOUPLER PS2705-1 PS2705-2 PS2705-4 FEATURES_ DESCRIPTION_ • PS2705-1, -2 and -4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor.
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PS2705-1
PS2705-2
PS2705-4
PS2705-1,
PS2705-4
transistor RJH 30
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MCA45T
Abstract: capacitor philips ll
Text: bSE D ai 7110ñEb □ 0bE72cì 4^5 H PHIN PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile
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711002b
BLU30/28
BLU30/28
OT119)
711Dfl5b
0Db2735
MCA45T
capacitor philips ll
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NE5217D
Abstract: No abstract text available
Text: Philips Sem iconductors Data C om m unications Products Product specification Postamplifier with link status indicator DESCRIPTION NE/SA5217 PIN CONFIGURATION The NE /S A5217 is a 75M Hz postam plifier system designed to accept low level high-speed signals. These signals are converted
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NE/SA5217
A5217
E5217
NE5212A
NE5217
NE5214
AB1432.
NE5217D
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SOT123 Package
Abstract: SOT123 BLF244 International Power Sources SOT-123
Text: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability
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BLF244
711002b
OT123
7110fi5b
T-39-11
SOT123 Package
SOT123
BLF244
International Power Sources
SOT-123
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PDF
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CM300DY-24E
Abstract: L120A BP107 fjl diode AL6345-25.0.391-00
Text: b4E D • poüierex 7E T4b 21 0G0b7Sb Obb « P R X inc Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 CM300DY-24E DU3l IG B TMOD
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7ET4b21
CM300DY-24E
BP107,
Amperes/1200
CM300DY-24
E-7-1800
CM300DY-24E
L120A
BP107
fjl diode
AL6345-25.0.391-00
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PDF
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TRANSISTOR G13
Abstract: C1u TRANSISTOR mrf154 amplifier MRF157
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Pow er Field E ffect Transistor N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts
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MRF157
TRANSISTOR G13
C1u TRANSISTOR
mrf154 amplifier
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Untitled
Abstract: No abstract text available
Text: 5V Linear Controller/Driver Description The CS8128 contains all the necessary control circuitry to implement a 5V lin ear regulator. An external pass device is used to produce superior performance compared to conventional monolithic regulators. The CS8128 with a TIP42
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CS8128
TIP42
500mA,
350mV
500mA
inc80
MS-001
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PDF
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k3017
Abstract: 2SK3017
Text: TO SH IBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance
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2SK3017
L-12-)
k3017
2SK3017
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PDF
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Untitled
Abstract: No abstract text available
Text: 5V Linear Controller/Driver Description The CS8127 contains all the necessary control circuitry to im plem en t a 5V lin ear regulator. A n external pass device is u se d to p ro d u ce su p erio r perform ance co m pared to conventional m onolithic regulators. The CS8127 w ith a TIP42
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CS8127
TIP42
500mA,
350mV
500mA
MS-001
MS-012
CS8127YN8
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PDF
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