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    TRANSISTOR S 812 Search Results

    TRANSISTOR S 812 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S 812 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    transistor 808

    Abstract: t3n8 transistor BUX 48 BUX44 bux c
    Text: *BUX44 N PN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A T R A N S IS TO R S IL IC IU M N P N , M ESA T R IP L E D IF F U S E ^P re fe rre d device D is p o s itif recommandé High speed, high curre n t, high po w er transistor Transistor de puissance rapide, fo r t courant


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    BUX44 CB-19 connected10' transistor 808 t3n8 transistor BUX 48 BUX44 bux c PDF

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


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    2SC5004 D 1437 transistor PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    Untitled

    Abstract: No abstract text available
    Text: Motor driver ICs PNP transistor array BA6254FS The BA6254FS has been developed as a low-saturation output, upper-side transistor array for iow-voltage m otor drive applications. The three PNP transistors have a common emitter. •A p p lic a tio n s Motor drivers


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    BA6254FS BA6254FS 150upply -5m-10m -50m-100m-200ni-500m PDF

    1.4464

    Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
    Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S


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    2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473 PDF

    transistor BFT 95

    Abstract: transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor
    Text: TELEFUNKEN ELECTRONIC SIC D ▼ • 812001b 000531!, 8 «ALG S T~3/-'~ m iBraaBSIEI» electronic BPr qB B FT 95 i Creative Technologies Silicon PNP Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier !


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    000531b ft-11 569-GS 000s154 hal66 if-11 transistor BFT 95 transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor PDF

    TRANSISTOR S 812

    Abstract: tea2018 TEA2019
    Text: S G S -T H O M S O N TE A 2019 ü ü 8 D Ê ll[L liË T M S R !IO Ê i CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A CURRENT LIMITATION TRANSFORMER DEMAGNETIZATION AND


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    TEA2019 BYT11 15kHz TRANSISTOR S 812 tea2018 PDF

    Untitled

    Abstract: No abstract text available
    Text: h7 / T ransistors UMG10N h-7 > V ^ ^ / D u a l Mini-Mold Transistor 7 i7 /R - i- ^ K 7 J l ' J l ' - t M N P N y lJ 3 > h 7 > y * $ Epitaxal Planar NPN Silicon Transistor < > / \ ' - 2 H y 'f / ’v/Inverter Driver • 1 U M T S C -7 0 ) /Dimensions (Unit : mm)


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    UMG10N PDF

    CET451AN

    Abstract: No abstract text available
    Text: CET451AN March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 7.2A , RDS ON =35mΩ @VGS=10V. RDS(ON)=50mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. 8 G D S D S D SOT-223 S G G SOT-223 (J23Z)


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    CET451AN OT-223 OT-223 CET451AN PDF

    2C3716HV

    Abstract: OR100
    Text: 4bE D b3b7SSH O O ^ S 1! 6 • M O T b T -3 3 -O S MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA MW DM0 unm 2C3716HV Chip NPN Silicon Power Transistor Discrete Military Operation . .designed for medlum-speed switching and amplifier applications.


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    2C3716HV MOTbT-33-OS Width250to350lis. 0to20% OR100 PDF

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 PDF

    Untitled

    Abstract: No abstract text available
    Text: TITLE: U N L E S S O THERW ISE NOTED REVISION G D IM E N SIO N S A R E IN IN C H ES ONE PLACE DECIMALS TWO PLACE DECIMALS ±.1 ±.01 T O L E R A N C E S ARE: THREE PLACE DECIMALS FOUR PLACE DECIMALS ±.005 ± .00 20 TRANSISTOR SOCKET ANGLES ± DWG NO: 2" TO—5 8 2 0 —GT


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    451E-7001 PDF

    4221 motorola transistor

    Abstract: MOTOROLA 4221 MJ200
    Text: 6 3 6 7 2 5 4 MOTOROLA S C <XS TR S/ R F MOTOROLA 89D 7 9 9 9 2 DElb3t,?ES4 7 |~ D T - J 5 - 3 S uraer this data sheet by MJ200AV120/D SEMICONDUCTOR TECHNICAL DATA NPN Silico n Pow er Transistor Module M J 2 0 0 A V 1 2 0 Energy Management Series DUAL TRI-STAGE


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    MJ200AV120/D MK145BP, MJ200AV120 4221 motorola transistor MOTOROLA 4221 MJ200 PDF

    CET451AN

    Abstract: No abstract text available
    Text: CET451AN March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 30V, 7.2A, R ds o n =35 itiQ @Vgs=10V. R d s (o n )=50 it iî 2 @Vgs=4.5V. • High dense cell design for low R d s <o n ). • Rugged and reliable. • SOT-223 Package.


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    CET451AN 35itiq OT-223 OT-223 CET451AN PDF

    2SK812

    Abstract: 2sk8
    Text: NEC F n -c h a n n e l m o s f ie l d e ffe c t p o w e r t r a n s is t o r ELECTRON DEVICE DESCRIPTION Ï 5 Ï The 2SK812 is N-Channel MOS Field E ffect Power Transistor designed fo r solenoid, m otor and lamp driver. FEATURES • b 412 S K . 8 1 2 PACKAGE D IM EN SIO N S


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    2SK812 2SK812 1987M 2sk8 PDF

    BT 816 transistor

    Abstract: transistor bt 808 BT 815 transistor 2SD807 BT 812
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    12//S BT 816 transistor transistor bt 808 BT 815 transistor 2SD807 BT 812 PDF

    2SC799

    Abstract: transistor 2sa564 2sa564 transistor 2SA564 25X1 2SA539
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    150Mc) 2SA564 2SC799 transistor 2sa564 2sa564 transistor 25X1 2SA539 PDF

    TRANSISTOR manual

    Abstract: cl 100 hie 2SB128A 2SD1110A 762B ic 812a transistor 152 M
    Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    Tc-25 2SD1110A TRANSISTOR manual cl 100 hie 2SB128A 2SD1110A 762B ic 812a transistor 152 M PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification b b s a ^ a i 00317 b4 1T3 • APX, NPN high frequency high voltage m BFQ265; BFQ265A transistor * N AMER PHILIPS/DISCRETE blE D " FEATURES PINNING PIN DESCRIPTION • High breakdown voltages • Low output capacitance


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    BFQ265; BFQ265A OT128B OT128B. PDF

    CT 1975 sam

    Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the


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    2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking PDF

    BT 815 transistor

    Abstract: BT 816 transistor
    Text: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code


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    0017S3? SMBT3906 Q68000-A4341 Q68000-A4417 23b320 BT 815 transistor BT 816 transistor PDF