58W SOT
Abstract: BLW85 ZL18
Text: N AMER P H I L I P S / D IS C R ET E b ^E D b b S 3 T 31 • 0 0 2 ^ 4 ^ 574 IAPX D L V V O O A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f, transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and
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bbS3T31
BLW85
7Z77540
7Z77541
58W SOT
BLW85
ZL18
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from
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2SC5010
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2SC 968 NPN Transistor
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from
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2SC5007
2SC 968 NPN Transistor
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MPQ3762
Abstract: it 051 1N916 2N3762 tup pnp transistor
Text: M P Q silicon 3 7 6 2 QUAD DUAL IN-LINE PNP SILICON ANNULAR MEMORY DRIVER TRANSISTOR QUAD DUAL-IN-LINE PNP SILICON MEMORY DRIVER TRANSISTOR . . . designed fo r high-current, high-speed switching. • Low Collector-E m itter Saturation Voltage — VC E (sat) s 0 .5 5 V d c (M ax) @ l c s 5 0 0 m Adc
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MPQ3762
120ns
2N3762
O-116
30Vdc
1N916
MPQ3762
it 051
1N916
2N3762
tup pnp transistor
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diode AR S1 77
Abstract: z645
Text: S T M8500A S amHop Microelectronics C orp. Arp,20 2005 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )
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M8500A
diode AR S1 77
z645
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Untitled
Abstract: No abstract text available
Text: S T M8500A S amHop Microelectronics C orp. J an.23 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )
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M8500A
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1.4464
Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S
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2SC5289
2SC5289
SC-61
2SC5289-T1
1.4464
NEC 3358
transistor Mu
61344
nec 8339
transistor Mu s12
nec k 4145
nec transistor k 4145
84147
ha 13473
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AN-994
Abstract: IRG4BC20SD-S
Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC20SD-S
AN-994
IRG4BC20SD-S
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AN-994
Abstract: IRG4BC20SD-S irg4bc
Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC20SD-S
AN-994
IRG4BC20SD-S
irg4bc
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Untitled
Abstract: No abstract text available
Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC20SD-S
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2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
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2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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M9409
Abstract: transistor 342 G motorola 2N5643
Text: MOTOROLA SC XST RS/ R F 4bE D L3 b 7 2 S4 OGIMÜTE 2 MOTOROLA . ' P - 3 3 " 11 • S E M IC O N D U C T O R TECHNICAL DATA 2N5643 The RF Line 40 W - 175 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR designed p rim a rily fo r w id e b a n d large-signal a m p lifie r stages in
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2N5643
M9409
transistor 342 G
motorola 2N5643
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AN-994
Abstract: IRG4BC30W-S
Text: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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IRG4BC30W-S
and10)
AN-994
IRG4BC30W-S
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LA 7693
Abstract: ic CD 4047 7737 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain
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2SC5014
2SC5014-T1
2SC5014-T2
LA 7693
ic CD 4047
7737 transistor
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H11A520-H11A550
Abstract: H11A51 H11A5100 H11A520 H11A550 HUA550
Text: S OL I D STATE D1 DE I 3 Ö7 SDÖ1 0 0 1 ^ 4 7 Optoelectronic Specifications - T - m - s z Photon Coupled Isolator H11A520-H11A550 -H11A5100 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor T h e G E Solid State H 11A520, H11A550 and H I 1A5100 consist o f a
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3fl75Dfll
H11A520-H11A550
-H11A5100
H11A520,
H11A550
H11A5100
referencefileE51868
H11A520-H11A550-H11A5100
H11A51
H11A520
HUA550
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MRF847
Abstract: Motorola i250
Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 45 WATTS. 870 MHz RF POWER TRANSISTOR NPN SILICON . . . d e sig n e d fo r 12.5 v o lt U H F large-signal common-base a m p lifie r a p p lic a tio n s in in d u s trial and co m m e rcia l F M eq u ip m e n t o p e ratin g in the ran ge o f 8 0 6 -9 6 0 M H z.
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Untitled
Abstract: No abstract text available
Text: I , I International TOR Rectifier PD- 91790 IRG4BC30W -S INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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IRG4BC30W
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Untitled
Abstract: No abstract text available
Text: _8 3 6 8 6 0 2 S O L I T R Q N D E V I C E S SOLITRON DEVICES INC _ 95 D 02821 D T-JT-ZS' ~T5 » e | fl3t,flbD5 DGGaaai fl I NC E > fô @ E Q j) g F VER Y HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER D e v ic e s - ln c - N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR*
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051mm)
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motor IG 2200 19 X 000 15 R
Abstract: motor IG 2200 53 X 000 41 R ic c 838 IRG4BC20KD IRG4BC20KD-S AN-994 IRGBC20KD2-S IRGBC20MD2-S motor IG 2200 19 00001 227V
Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91598A
IRG4BC20KD-S
motor IG 2200 19 X 000 15 R
motor IG 2200 53 X 000 41 R
ic c 838
IRG4BC20KD
IRG4BC20KD-S
AN-994
IRGBC20KD2-S
IRGBC20MD2-S
motor IG 2200 19 00001
227V
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AN-994
Abstract: IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S
Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91598A
IRG4BC20KD-S
AN-994
IRG4BC20KD-S
IRGBC20KD2-S
IRGBC20MD2-S
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IRG4BC20SD
Abstract: No abstract text available
Text: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC20SD
O-220AB
IRG4BC20SD
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AN-994
Abstract: IRG4BC30K-S IRGBC30K-S IRGBC30M-S
Text: PD - 91619B IRG4BC30K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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91619B
IRG4BC30K-S
AN-994
IRG4BC30K-S
IRGBC30K-S
IRGBC30M-S
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